IRGP50B60PD [INFINEON]
SMPS IGBT; SMPS IGBT
| 型号： | IRGP50B60PD |
| 厂家： | 
Infineon |
| 描述： | SMPS IGBT |
| 文件： | 总10页 (文件大小：869K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94624B
IRGP50B60PD
SMPS IGBT
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Equivalent MOSFET
Parameters
G
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
E
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
n-channel
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
E
C
G
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
75
IC @ TC = 100°C
42
ICM
150
ILM
150
A
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
50
25
100
VGE
±20
V
PD @ TC = 25°C
PD @ TC = 100°C
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
370
W
150
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.34
0.64
–––
40
Units
°C/W
RθJC (IGBT)
RθJC (Diode)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
–––
6.0 (0.21)
–––
g (oz)
1
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07/02/07
IRGP50B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
Min. Typ. Max. Units
Conditions
GE = 0V, IC = 500µA
Ref.Fig
4, 5,6,8,9
7,8,9
V(BR)CES
∆V(BR)CES/∆TJ
RG
V
V
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
—
—
0.61
1.2
2.0
2.4
2.6
3.2
4.0
-7.07
42
—
V
V/°C
Ω
GE = 0V, IC = 1mA (25°C-125°C)
—
—
1MHz, Open Collector
IC = 33A, VGE = 15V
2.2
2.6
2.9
3.6
5.0
—
VCE(on)
IC = 50A, VGE = 15V
Collector-to-Emitter Saturation Voltage
V
IC = 33A, VGE = 15V, TJ = 125°C
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
∆VGE(th)/∆TJ
gfe
IC = 250µA
Gate Threshold Voltage
V
mV/°C
S
V
CE = VGE, IC = 1.0mA
VCE = 50V, IC = 33A, PW = 80µs
GE = 0V, VCE = 600V
Threshold Voltage temp. coefficient
Forward Transconductance
—
ICES
V
Collector-to-Emitter Leakage Current
5.0
1.0
1.3
1.5
1.3
—
500
—
µA
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 25A, VGE = 0V
mA
1.7
2.0
1.7
±100
VFM
IGES
IF = 50A, VGE = 0V
Diode Forward Voltage Drop
V
10
IF = 25A, VGE = 0V, TJ = 125°C
V
GE = ±20V, VCE = 0V
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge (turn-on)
Conditions
Ref.Fig
17
I
C = 33A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
240
41
360
82
Qgc
V
V
CC = 400V
GE = 15V
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
nC
µJ
ns
CT1
Qge
84
130
590
420
960
44
Eon
I
C = 33A, VCC = 390V
GE = +15V, RG = 3.3Ω, L = 210µH
TJ = 25°C
C = 33A, VCC = 390V
GE = +15V, RG = 3.3Ω, L = 210µH
TJ = 25°C
360
380
740
34
CT3
CT3
Eoff
V
Etotal
td(on)
tr
I
V
26
36
td(off)
tf
Turn-Off delay time
Fall time
130
43
140
56
Eon
I
C = 33A, VCC = 390V
GE = +15V, RG = 3.3Ω, L = 210µH
TJ = 125°C
C = 33A, VCC = 390V
GE = +15V, RG = 3.3Ω, L = 200µH
TJ = 125°C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
610
460
880
530
CT3
11,13
Eoff
V
µJ
ns
Etotal
td(on)
tr
1070 1410
WF1,WF2
CT3
I
33
26
43
36
160
65
—
V
12,14
td(off)
tf
Turn-Off delay time
Fall time
140
50
WF1,WF2
Cies
Coes
Cres
Coes eff.
Coes eff. (ER)
V
V
GE = 0V
Input Capacitance
Output Capacitance
4750
390
58
16
15
CC = 30V
—
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
—
pF f = 1Mhz
V
GE = 0V, VCE = 0V to 480V
280
190
—
Effective Output Capacitance (Energy Related)
—
TJ = 150°C, IC = 150A
3
V
CC = 480V, Vp =600V
RBSOA
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
FULL SQUARE
CT2
Rg = 22Ω, VGE = +15V to 0V
trr
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 25A, VR = 200V,
—
—
—
—
—
—
50
75
160
375
4200
10
ns
nC
A
19
21
105
112
420
4.5
8.0
di/dt = 200A/µs
Qrr
IF = 25A, VR = 200V,
di/dt = 200A/µs
Irr
IF = 25A, VR = 200V,
di/dt = 200A/µs
19,20,21,22
CT5
15
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
ꢀ Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES
.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES
.
2
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IRGP50B60PD
80
70
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
Limited by package
0
25
50
T
75
100
125
150
0
20 40 60 80 100 120 140 160
(°C)
, Case Temperature (°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
100
10
320
280
240
200
160
120
80
V
= 15V
GE
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
40
1
0
10
100
(V)
1000
0
2
4
6
8
10
V
(V)
CE
V
Fig. 3 - Reverse Bias SOA
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 150°C; VGE =15V
TJ = -40°C; tp = 80µs
320
280
240
200
160
120
80
320
280
240
200
160
120
80
V
= 15V
GE
V
= 15V
GE
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10 12 14 16 18 20
(V)
V
(V)
V
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGP50B60PD
600
25
20
15
10
5
T
J
= 25°C
500
400
300
200
100
0
T
= 125°C
J
I
I
I
= 15A
= 33A
= 50A
CE
CE
CE
T
= 125°C
J
T
= 25°C
15
J
0
0
5
10
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 7 - Typ. Transfer Characteristics
Fig. 8 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 25°C
100
25
20
15
10
5
T = 150°C
J
T = 125°C
J
I
I
I
= 15A
= 33A
= 50A
T = 25°C
J
CE
CE
CE
10
A
1
0.6
0
1.0
1.4
1.8
2.2
2.6
0
5
10
15
20
Forward Voltage Drop - V
(V)
FM
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Maximum. Diode Forward
TJ = 125°C
Characteristics tp = 80µs
1800
1600
1400
1200
1000
800
1000
100
10
E
ON
td
OFF
E
OFF
t
F
600
td
ON
400
t
R
200
10
20
30
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
I
C
C
Fig. 11 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Diode clamp used: 30ETH06 (See C.T.3)
4
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IRGP50B60PD
1800
1600
1400
1200
1000
800
1000
100
10
E
OFF
td
OFF
t
F
E
ON
td
600
ON
t
R
400
200
0
10
20
30
40
0
10
20
(
30
40
Ω
( )
R
Ω
)
R
G
G
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
35
Diode clamp used: 30ETH06 (See C.T.3)
10000
30
25
20
15
10
5
Cies
1000
Coes
100
Cres
0
10
0
100 200 300 400 500 600 700
Voltage (V)
0
100
200
V
300
400
500
(V)
CE
Fig. 16- Typ. Capacitance vs. VCE
Fig. 15- Typ. Output Capacitance
VGE= 0V; f = 1MHz
Stored Energy vs. VCE
1.5
1.3
1.0
0.8
0.5
16
14
12
10
8
V
= 480V
CE
6
4
2
0
0
50
100
150
200
250
300
-60 -40 -20
0
20 40 60 80 100120140160
(°C)
Q
, Total Gate Charge (nC)
T
G
C
Fig. 17 - Typical Gate Charge vs. VGE
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
ICE = 33A
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5
IRGP50B60PD
140
30
25
20
15
10
5
VR = 200V
TJ = 125°C
TJ = 25°C
VR= 200V
TJ = 125°C
TJ = 25°C
120
100
I
I
I
= 50A
= 25A
= 10A
F
F
F
I
I
= 50A
= 25A
= 10A
F
F
80
60
40
20
I
F
A
A
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
1400
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
1200
1000
I
I
I
= 50A
= 25A
= 10A
F
F
F
800
600
400
200
0
I
I
I
= 50A
= 25A
= 10A
F
F
F
1000
A
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
6
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IRGP50B60PD
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.0789 0.000277
0.01
τ
0.02
0.01
J τJ
τ
τ
Cτ
1τ1
Ci= τi/Ri
τ
2τ2
0.2614 0.040918
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
0.05
Ri (°C/W) τi (sec)
0.0733 0.000420
τ
0.01
JτJ
τ
τ
0.02
0.01
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.1301 0.002274
0.1358 0.023026
Ci= τi/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1000
OPERATION IN THIS AREA
LIMITED BY V (on)
CE
100
100µsec
1msec
10
10msec
1
100msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C
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7
IRGP50B60PD
L
L
VCC
80 V
DUT
DUT
0
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
V
CC
L
R =
PFC diode
I
CM
DUT /
DRIVER
VCC
DUT
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
dif/dt
ADJUST
IRFP250
G
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8
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IRGP50B60PD
700
600
500
400
300
200
100
0
35
30
25
20
15
10
5
700
600
500
400
300
200
100
0
70
tr
tf
60
Ice
Vce
Vce
50
90% Ice
90% Ice
5% Vce
40
30
Ice
10% Ice
5% Vce
20
5% Ice
10
0
0
Eon
Loss
Eoff Loss
-100
-10
4.25
-100
-5
3.95
4.05
4.15
Time (uS)
-0.05
0
0.05
0.1
0.15
Time (uS)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 25°C using Fig. CT.3
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
I
RRM
RRM
5
di(rec)M/dt
0.75
I
RRM
1
di /dt
f
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
and IRRM
trr X IRRM
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. WF3 - Reverse Recovery Waveform and
Definitions
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9
IRGP50B60PD
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/07
10
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