IRGP4790DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGP4790DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总12页 (文件大小：878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4790DPbF
IRGP4790D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 650V
C
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 75A
E
E
G
C
C
G
G
V
E
IRGP4790DPbF
IRGP4790D‐EPbF
TO‐247AD
n-channel
Applications
Industrial Motor Drive
UPS
Solar Inverters
Welding
TO‐247AC
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4790DPbF
IRGP4790D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4790DPbF
IRGP4790D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
650
140
90
225
300
65
V
ILM
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
40
300
±20
455
230
V
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.1
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRGP4790DPbF/IRGP4790D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
650
—
—
0.65
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
—
—
5.5
1.7
2.1
—
2.0
—
7.4
V
IC = 75A, VGE = 15V, TJ = 25°C
IC = 75A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 2.1mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-20
—
mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
47
1.0
1.2
—
2.1
1.7
—
35
—
±100
2.7
—
S
µA
V
V
CE = 50V, IC = 75A, PW = 20µs
GE = 0V, VCE = 650V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
mA VGE = 0V, VCE = 650V, TJ = 175°C
nA
V
VGE = ±20V
IF = 75A
IF = 75A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
140
50
60
2.5
2.2
4.7
50
70
200
60
210
80
90
3.4
3.0
6.4
70
90
225
80
IC = 75A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 400V
IC = 75A, VCC = 400V, VGE=15V
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
3.9
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
2.8
6.7
50
—
—
—
—
—
mJ
IC = 75A, VCC = 400V, VGE=15V
RG = 10, L = 200µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
70
ns
td(off)
Turn-Off delay time
240
tf
Fall time
—
—
—
—
70
4430
310
130
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 300A
VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C,VCC = 400V, Vp ≤ 650V
SCSOA
Short Circuit Safe Operating Area
5.5
—
—
µs
VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
770
170
27
—
—
—
µJ
ns
A
VCC = 400V, IF = 75A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRGP4790DPbF/IRGP4790D-EPbF
140
120
100
80
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 208.3W
Square Wave:
VCC
60
I
Diode as specified
40
20
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
500
400
300
200
100
0
160
140
120
100
80
60
40
20
0
25
50
75
100
(°C)
125
150
175
25
50
75
T
100
(°C)
125
150
175
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
1000
100
10
100
10µsec
10
1
100µsec
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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November 12, 2014
IRGP4790DPbF/IRGP4790D-EPbF
300
250
200
150
100
50
300
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
250
200
150
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
300
250
200
150
100
50
300
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
250
200
150
100
50
-40°C
25°C
175°C
0
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
(V)
V
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
12
10
12
10
8
I
= 38A
= 75A
= 150A
I
= 38A
= 75A
= 150A
CE
CE
I
I
8
6
4
2
0
CE
CE
I
I
CE
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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November 12, 2014
IRGP4790DPbF/IRGP4790D-EPbF
225
12
10
8
180
135
90
I
= 38A
= 75A
= 150A
CE
I
CE
I
CE
6
T = 25°C
J
T = 175°C
J
4
45
0
2
0
2
4
6
8
10
12
14
16
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
12
10
8
1000
100
10
td
OFF
E
ON
t
6
F
4
E
OFF
td
ON
2
t
R
0
0
25
50
75
(A)
100
125
150
0
50
100
150
I
C
I
(A)
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10000
11
10
9
8
1000
td
OFF
7
t
6
F
E
ON
t
R
5
4
100
E
td
OFF
ON
3
2
10
0
25
50
75
100
0
20
40
60
(
80
100
120
Rg ()
)
R
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
5
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IRGP4790DPbF/IRGP4790D-EPbF
30
25
20
15
10
30
R
10
G =
25
20
15
10
5
22
R
G =
R
47
G =
100
R
G =
40
20
60
80 100 120 140 160
(A)
0
20
40
60
80
100
I
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
4.4
4.0
3.6
3.2
2.8
2.4
30
25
20
15
10
150A
75A
10
22
47
100
38A
200
300
400
500
600
700
800
200 250 300 350 400 450 500 550 600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
VCC = 400V; VGE = 15V; TJ = 175°C
700
650
600
550
500
450
400
24
20
16
12
8
400
330
260
190
120
50
T
sc
I
R
= 10
sc
G
R
R
= 22
G
G
= 47
= 100
R
G
4
8
10
12
14
(V)
16
18
20
40
60
80 100 120 140 160
(A)
V
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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IRGP4790DPbF/IRGP4790D-EPbF
10000
1000
100
16
Cies
V
V
= 400V
= 300V
14
12
10
8
CES
CES
Coes
Cres
6
4
2
10
0
0
100
200
300
(V)
400
500
600
0
20 40 60 80 100 120 140 160
, Total Gate Charge (nC)
V
Q
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
Fig. 24 - Typ. Capacitance vs. VCE
ICE = 75A
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
Ri (°C/W)
0.0125052
0.0722526
0.1389474
0.1056000
i (sec)
0.000036
0.000151
0.005683
0.029339
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.01
0.02
J J
CC
1 1
2 2
3 3
4 4
0.01
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000022
0.000779
0.009640
0.079874
0.10
0.1
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
0.0131492
0.3667154
0.3959357
0.3228848
J J
CC
0.01
0.001
0.0001
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP4790DPbF/IRGP4790D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
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8
IRGP4790DPbF/IRGP4790D-EPbF
600
500
400
300
200
100
0
120
100
80
600
500
400
300
200
100
0
120
100
80
tf
tr
TEST
CURRENT
90% ICE
60
60
90% ICE
40
40
10% VCE
20
20
10% ICE
10% VCE
10% ICE
0
0
Eon Loss
0.5
Eoff Loss
-100
-20
-100
-20
-0.5
0
0.5
1
-0.5
0
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
600
100
QRR
500
80
tRR
VCE
400
300
60
40
20
ICE
200
0
100
0
Peak
IRR
-20
-40
-100
-100
-0.5
0.0
0.5
1.0
-5
0
5
10
time (µs)
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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IRGP4790DPbF/IRGP4790D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 12, 2014
IRGP4790DPbF/IRGP4790D-EPbF
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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November 12, 2014
IRGP4790DPbF/IRGP4790D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F)††
N/A
TO-247AC
TO-247AD
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
Added IFM Diode Maximum Forward Current = 300A with the note on page 1.
Removed note from switching losses test condition on page 2.
Removed note from switching losses test condition on page 2.
8/21/2014
11/12/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 12, 2014
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