IRGP6630DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGP6630DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总13页 (文件大小：692K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP6630DPbF
IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
IC = 30A, TC =100°C
tSC 5µs, TJ(max) = 175°C
CE(ON) typ. = 1.65V @ IC = 18A
G
E
V
IRGP6630DPbF
IRGP6630D‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
G
Gate
C
E
Welding
H Bridge Converters
Collector
Emitter
Features
Low VCE(ON) and Switching Losses
Benefits
High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tube
Tube
Quantity
IRGP6630DPbF
IRGP6630D-EPbF
TO-247AC
TO-247AD
25
25
IRGP6630DPbF
IRGP6630D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
600
47
V
IC @ TC = 100°C
Continuous Collector Current
30
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
54
72
15
A
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current
IFM
Diode Maximum Forward Current
72
±20
VGE
Continuous Gate-to-Emitter Voltage
V
PD @ TC = 25°C
PD @ TC = 100°C
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
192
96
-40 to +175
W
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.78
5.9
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
0.94
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1.2mA (25°C-175°C)
—
—
—
1.65
2.05
2.10
—
1.95
—
—
IC = 18A, VGE = 15V, TJ = 25°C
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
V
IC = 18A, VGE = 15V, TJ = 150°C
IC = 18A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 500µA
Gate Threshold Voltage
4.0
6.5
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-20
—
mV/°C VCE = VGE, IC = 500µA (25°C-175°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
12
1.0
410
—
1.6
1.3
—
25
—
±100
2.3
—
S
µA
nA
V
V
V
CE = 50V, IC = 18A, PW = 20µs
GE = 0V, VCE = 600V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 600V, TJ = 175°C
VGE = ±20V
IF = 6A
IF = 6A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
30
10
15
75
350
425
40
25
95
Max Units
Conditions
Qg
—
IC = 18A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
µJ
VCC = 400V
IC = 18A, VCC = 400V, VGE=15V
RG = 22, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
µJ
ns
pF
td(off)
tf
Turn-Off delay time
Fall time
20
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
230
570
800
30
25
100
80
1080
70
30
IC = 18A, VCC = 400V, VGE=15V
RG = 22, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0MHz
TJ = 175°C, IC = 72A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C,VCC = 400V, Vp ≤ 600V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
180
70
—
—
µJ TJ = 175°C
VCC = 400V, IF = 6A, VGE = 15V
ns
Rg = 22L = 0.68mH, L=150nH
Irr
Peak Reverse Recovery Current
—
15
—
A
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
60
50
40
30
20
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 103W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
50
40
30
20
10
0
200
150
100
50
0
25
50
75
T
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
100
10
1
100
10µsec
100µsec
10
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
10
100
1000
1
10
100
1000
V
(V)
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
72
72
60
48
36
24
12
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
60
48
36
24
12
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
72
60
48
36
24
12
0
72
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
-40°C
25°C
175°C
60
48
36
24
12
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
(V)
V
(V)
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
8
8
6
I
= 9.0A
= 18A
= 36A
CE
6
4
2
0
I
= 9.0A
= 18A
= 36A
I
CE
CE
I
I
CE
CE
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
72
8
6
4
2
0
T = 25°C
J
60
T = 175°C
J
I
= 9.0A
= 18A
= 36A
CE
48
36
24
12
0
I
CE
I
CE
4
6
8
10
12
14
16
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
1000
100
10
2000
1600
1200
800
400
0
td
OFF
t
F
t
R
E
OFF
td
ON
E
ON
1
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; ; VCE = 400V, RG = 22; VGE = 15V
TJ = 175°C; VCE = 400V, RG = 22; VGE = 15V
1000
1000
800
td
OFF
E
OFF
E
600
400
200
0
100
t
F
ON
td
ON
t
R
10
0
20
40
60
( )
80
100
0
20
40
60
80
100
R
Rg ( )
G
Fig. 17 - Typ. Switching Time vs. RG
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V
TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V
5
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November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
25
20
15
10
5
25
R
10
G =
20
15
10
5
R
22
G =
R
47
G =
R
100
G =
0
0
2
4
6
8
10
12
0
20
40
60
(
80
100
I
(A)
R
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
2000
1500
1000
500
0
25
20
15
10
5
12A
10
22
47
100
6A
3A
0
200 400 600 800 1000 1200 1400
0
200
400
600
800 1000 1200
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 6A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
V
VCC = 400V; VGE = 15V; TJ = 175°C
20
16
12
8
100
80
60
40
20
0
350
300
250
200
150
100
50
R
= 10
G
R
= 22
= 47
G
R
G
I
T
R
= 100
sc
sc
G
4
0
0
9
10
11
12
V
13
14
15
16
2
4
6
8
10
12
(V)
GE
I
(A)
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
10000
1000
100
10
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
Coes
Cres
6
4
2
1
0
0
100
200
300
(V)
400
500
600
0
5
10
15
20
25
30
35
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
CE = 18A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
50
40
30
20
10
0
D=0.1
D=0.2
D=0.5
100
125
150
175
Case Temperature (°C)
Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.21694
0.29812
0.26453
i (sec)
0.00021
0.000939
0.008391
0.05
J J
CC
0.02
0.01
1 1
2 2
33
Ci= iRi
0.01
Ci= iRi
Notes:
1. Duty Factor D = t1/t2
SINGLE PULSE
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
7
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
10
1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
0.40747
1.84187
2.51697
1.13369
i (sec)
0.000104
0.000268
0.002634
0.026058
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
0.1
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
Notes:
1. Duty Factor D = t1/t2
SINGLE PULSE
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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IRGP6630DPbF/IRGP6630D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
9
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
600
500
400
300
200
100
0
30
25
20
15
10
5
600
500
400
300
200
100
0
30
25
20
15
10
5
tr
TEST
CURRENT
tf
90% ICE
90% ICE
10%ICE
10% VCE
10% VCE
10% ICE
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-5
-0.4
0
0.4
time (µs)
0.8
1.2
-0.2
0
0.2
0.4
0.6
0.8
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
120
20
100
80
60
40
20
0
15
10
5
QRR
VCE
tRR
ICE
0
-5
Peak
IRR
-10
-15
-20
-100
-20
5.00
-10.00
-5.00
0.00
-0.15 -0.05 0.05 0.15 0.25 0.35
Time (uS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
10
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© 2014 International Rectifier Submit Datasheet Feedback
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IRGP6630DPbF/IRGP6630D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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© 2014 International Rectifier Submit Datasheet Feedback
November 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
Qualification Information†
Qualification Level
Industrial
TO-247AC
TO-247AD
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Added IFM Diode Maximum Forward Current = 72A with the note on page 1.
11/14/2014
Removed note from switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
13
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November 14, 2014
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