IRGP6660DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGP6660DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总13页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP6660DPbF
IRGP6660D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 48A
G
E
E
C
C
G
G
E
V
IRGP6660D-EPbF
TO-247AD
IRGP6660DPbF
TO-247AC
n-channel
Applications
G
Gate
C
E
• Welding
• H Bridge Converters
Collector
Emitter
Features
Low VCE(ON) and switching losses
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Positive VCE (ON) temperature coefficient
Lead-free, RoHS compliant
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP6660DPBF
IRGP6660D-EPBF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP6660DPBF
IRGP6660D-EPBF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
600
95
60
144
192
V
A
Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current
30
IFM
VGE
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
192
±20
330
V
W
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
167
TJ
Operating Junction and
-40 to +175
C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
3.35
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RθJC (IGBT)
RθJC (Diode)
RθCS
°C/W
RθJA
1
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IRGP6660DPbF/IRGP6660D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
ΔV(BR)CES/ΔTJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
0.65
—
—
V
VGE = 0V, IC = 150µA
V/°C VGE = 0V, IC = 2mA (25°C-175°C)
—
—
—
1.65
2.05
2.10
—
1.95
—
—
IC = 48A, VGE = 15V, TJ = 25°C
V
V
IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
4.0
6.5
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-17
—
mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
ΔVGE(th)/ΔTJ
gfe
—
—
—
—
—
—
33
1.0
630
—
1.8
1.3
—
75
—
±100
2.8
—
S
µA
V
V
CE = 50V, IC = 48A, PW = 20µs
GE = 0V, VCE = 600V
ICES
IGES
VFM
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V
IF = 8.0A
IF = 8.0A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
Typ.
Max Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
95
28
35
0.6
1.3
1.9
60
50
155
30
—
IC = 48A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
nC
mJ
VCC = 400V
IC = 48A, VCC = 400V, VGE=15V
RG = 10Ω, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
0.78
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
1.6
2.38
45
—
—
—
—
—
mJ
IC = 48A, VCC = 400V, VGE=15V
RG = 10Ω, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
55
ns
td(off)
Turn-Off delay time
160
tf
Fall time
—
—
—
—
60
2970
175
85
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 192A
FULL SQUARE
V
CC = 480V, Vp ≤ 600V
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 600V
GE = +15V to 0V
TJ = 175°C
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
V
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
135
70
—
—
—
µJ
ns
A
VCC = 400V, IF = 8.0A
VGE = 15V, Rg = 10Ω
Irr
Peak Reverse Recovery Current
22
Notes:
VCC = 80% (VCES), VGE = 20V, L = 210µH, RG = 10Ω.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
2
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IRGP6660DPbF/IRGP6660D-EPbF
100
90
80
70
60
50
40
30
20
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 167W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
25
50
75
100
(°C)
125
150
175
T
(°C)
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
100
10
1
10µsec
100µsec
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
1
10
100
V
(V)
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
200
200
150
100
50
150
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
200
150
100
50
200
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
175°C
25°C
-40°C
150
100
50
0
0
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
(V)
V
(V)
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 20µs
7
6
7
6
I
= 24A
= 48A
= 96A
CE
I
= 24A
= 48A
= 96A
5
4
3
2
1
0
5
4
3
2
1
0
CE
I
CE
I
CE
I
CE
I
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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IRGP6660DPbF/IRGP6660D-EPbF
7
6
5
4
3
2
1
0
200
T = 25°C
J
I
= 24A
= 48A
= 96A
CE
T = 175°C
I
150
100
50
J
CE
I
CE
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 175°C
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1000
100
10
td
OFF
t
F
E
OFF
td
ON
E
t
ON
R
20 30 40 50 60 70 80 90 100
(A)
10 20 30 40 50 60 70 80 90 100
I
(A)
C
I
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
5.0
td
4.0
OFF
E
OFF
3.0
2.0
t
R
100
t
F
E
td
ON
ON
1.0
0.0
10
0
20
40
60
80
100
0
20
40
60
80
100
R
( )
Ω
G
R
( )
Ω
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5
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IRGP6660DPbF/IRGP6660D-EPbF
30
25
20
15
10
5
25
20
15
10
5
R
R
10Ω
22Ω
G =
G =
R
R
47Ω
G =
100Ω
G =
4
6
8
10
I
12
(A)
14
16
18
0
20
40
60
Ω)
80
100
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
25
20
15
10
5
1250
1000
750
16A
22Ω
Ω
10
47Ω
100Ω
8.0A
500
4.0A
250
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 8.0A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
V
VCC = 400V; VGE = 15V; TJ = 175°C
25
20
15
10
5
500
400
300
200
100
0
250
200
150
100
50
Ω
Ω
R
R
= 10
G
G
I
sc
= 22
T
sc
R
= 47Ω
G
R
= 100Ω
G
0
9
10
11
12
V
13
14
15
16
0
5
10
15
20
25
(V)
I
(A)
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 400V; TC = 25°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 175°C
6
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IRGP6660DPbF/IRGP6660D-EPbF
10000
1000
100
16
V
V
= 400V
= 300V
14
12
10
8
CES
CES
Cies
6
Coes
Cres
4
2
10
0
0
100
200
300
(V)
400
500
600
0
10 20 30 40 50 60 70 80 90 100
, Total Gate Charge (nC)
V
Q
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
CE = 48A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
70
60
50
40
30
20
10
D=0.1
D=0.2
D=0.3
0
100
125
150
175
Case Temperature (°C)
Fig. 26 - Typical Gate Charge vs. VGE
1
D = 0.50
0.1
0.20
0.10
0.05
Ri (°C/W)
0.007832
0.117473
0.181692
0.142534
τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.000007
0.000170
0.003719
0.023371
τ
τ
J τJ
τ
CτC
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
0.02
0.01
0.01
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
10
1
D = 0.50
0.20
0.10
0.05
Ri (°C/W)
0.116586
1.136344
1.434449
0.664097
τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.000047
0.000298
0.002865
0.026578
0.1
τ
0.02
0.01
τ
J τJ
τ
CτC
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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IRGP6660DPbF/IRGP6660D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
R = VCC
ICM
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
9
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
600
500
400
300
200
100
0
120
100
80
120
100
80
600
500
400
300
200
100
0
tr
tf
TEST
CURRENT
90% ICE
60
60
40
40
10% VCE
10% ICE
90% ICE
20
20
10% ICE
10% VCE
0
0
Eon Loss
-0.4
Eoff Loss
-100
-20
-100
-20
-0.6
-0.5
time (µs)
-0.2
-0.6
-0.5
time(µs)
-0.3
-0.2
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
600
500
400
300
200
100
0
20
15
10
5
500
400
300
200
100
0
QRR
tRR
VCE
0
ICE
-5
-10
-15
-20
-25
Peak
IRR
-100
-100
-5
0
5
10
-0.2
0.1
time (µs)
0.3
0.6
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
10
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IRGP6660DPbF/IRGP6660D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
N/A
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
• Added IFM Diode Maximum Forward Current = 192A with the note on page 1.
• Removed note from switching losses test condition on page 2.
11/14/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014
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INFINEON
IRGPC20K-E
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRGPC20KD2-E
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
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