IRGPC40FD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A); 超快软恢复（ VCES = 600V ， VGE @ = 15V ， IC = 27A ），绝缘栅双极晶体管
| 型号： | IRGPC40FD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A) |
| 文件： | 总8页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1113
IRGPC40FD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
Fast CoPack IGBT
DIODE
Features
C
VCES = 600V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CE(sat) ≤ 2.0V
G
@VGE = 15V, IC = 27A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
O-247AC
T
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
49
IC @ TC = 100°C
27
ICM
200
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
200
IF @ TC = 100°C
IFM
15
200
VGE
± 20
160
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
0.77
1.7
—
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
—
°C/W
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 1
C-117
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IRGPC40FD2
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.70
V/°C VGE = 0V, IC = 1.0mA
IC = 27A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.7 2.0
VGE = 15V
—
2.2
1.9
—
—
—
V
IC = 49A
See Fig. 2, 5
—
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-12
12
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
—
—
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
3500
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
—
1.3 1.7
1.2 1.6
V
IC = 15A
See Fig. 13
—
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
59
8.6
25
71
76
80
10
42
—
—
IC = 27A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
320 480
210 320
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.3
3.2
—
—
mJ See Fig. 9, 10, 11, 18
4.5 6.8
70
73
—
—
—
—
—
—
—
—
—
60
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
540
480
7.8
13
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH
pF
ns
A
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
1500
190
20
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
42
TJ = 25°C See Fig.
74 120
4.0 6.0
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.5
10
VR = 200V
Qrr
80 180
220 600
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
Notes:
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-118
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IRGPC40FD2
30
25
D u ty cycle : 5 0 %
T
T
=
12 5°C
9 0 °C
J
=
sink
G a te drive a s sp ec ifie d
T urn -o n losse s inclu de
e ffec ts of re ve rse re co ve ry
20
P o w e r D is sipation
= 3 5W
60 % of ra ted
15
10
5
volta ge
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
T
= 25°C
J
T
= 150°C
J
100
10
1
10
1
T
= 150°C
J
T
= 25°C
J
0.1
0.01
V
= 15V
V
= 100V
G E
20µs PULSE W IDTH
CC
5µs PULSE W IDTH
0.1
1
10
5
10
15 20
VC E , Collector-to-Emitter Voltage (V)
V
, G ate-to-E m itter Voltage (V )
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-119
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IRGPC40FD2
3.0
2.5
2.0
1.5
1.0
50
40
30
20
10
0
V
= 15V
V
= 15V
G E
80µs P ULSE W IDTH
G E
I
= 54A
C
I
= 27A
= 14A
C
C
I
-60 -40 -20
0
20
40
60
8 0 1 00 120 140 160
25
50
75
100
125
150
TC , Case Temperature (°C)
TC , Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-120
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IRGPC40FD2
20
16
12
8
3000
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 27A
CE
C
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
2500
2000
1500
1000
500
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
0
0
10
20
30
40
50
60
1
10
100
Q g , Total Gate Charge (nC)
VC E , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
10
1
4.9
4.8
4.7
4.6
4.5
Ω
RG = 10
VCC = 480V
VGE = 15V
TC = 25°C
IC = 27A
VGE = 15V
VCC = 480V
IC = 54A
IC = 27A
IC = 14A
A
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
T , Case Temperature (°C)
C
Ω
R , Gate Resistance ( )
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-121
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IRGPC40FD2
20.0
1000
100
10
Ω
RG = 10
V
T
= 20V
= 125°C
G E
J
TC = 150°C
VCC = 480V
VGE = 15V
16.0
12.0
8.0
SAFE OPE RA TING ARE A
4.0
A
0.0
1
0
20
40
60
1
10
100
1000
I , Collector-to-Emitter Current (A)
V
, Collector-to-Em itter Voltage (V)
C
C E
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-122
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IRGPC40FD2
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
40
20
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dfi/dt
Fig. 14 - Typical Reverse Recovery vs. dfi/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dfi/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-123
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IRGPC40FD2
90% Vge
+Vge
Vce
Same type
device as
D.U.T.
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
C-124
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