IRGS4607DPBF_15 [INFINEON]

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
IRGS4607DPBF_15
型号: IRGS4607DPBF_15
厂家: Infineon    Infineon
描述:

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRGR4607DPbF  
IRGS4607DPbF  
IRGB4607DPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 600V  
C
C
C
C
IC = 7.0A, TC =100°C  
E
E
C
G
E
G
C
tSC 5µs, TJ(max) = 175°C  
CE(ON) typ. = 1.75V @ IC = 4.0A  
G
G
E
IRGB4607DPbF  
TO-220AB  
IRGR4607DPbF  
D-Pak  
IRGS4607DPbF  
D2Pak  
V
n-channel  
Applications  
• Industrial Motor Drive  
• UPS  
G
Gate  
C
E
Collector  
Emitter  
• Solar Inverters  
• Welding  
Features  
Benefits  
Low VCE(ON) and Switching Losses  
5µs Short Circuit SOA  
Square RBSOA  
High Efficiency in a Wide Range of Applications  
Rugged Transient Performance  
Maximum Junction Temperature 175°C  
Positive VCE (ON) Temperature Coefficient  
Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Base part number  
IRGR4607DPbF  
IRGS4607DPbF  
Package Type  
Standard Pack  
Form  
Tube  
Orderable Part Number  
Quantity  
75  
2000  
3000  
3000  
50  
IRGR4607DPbF  
IRGR4607DTRPbF  
IRGR4607DTRLPbF  
IRGR4607DTRRPbF  
IRGS4607DPBF  
IRGS4607DTRRPbF  
IRGS4607DTRLPbF  
IRGB4607DPbF  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Tube  
Tape and Reel Right  
Tape and Reel Left  
Tube  
D-Pak  
D2Pak  
800  
800  
50  
IRGB4607DPbF  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Max.  
Units  
VCES  
600  
11  
7.0  
12  
16  
8.0  
5.0  
16  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
A
ILM  
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
±20  
±30  
58  
VGE  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
W
Maximum Power Dissipation  
29  
TJ  
Operating Junction and  
-40 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec. (1.6mm) from case)  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in.  
10 lbf·in (1.1 N·m)  
1
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IRGR/S/B4607DPbF  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.50  
Max.  
2.6  
8.3  
Units  
Thermal Resistance, Junction-to-Case (IGBT)   
Thermal Resistance, Junction-to-Case (Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)  
RJC (IGBT)  
RJC (Diode)  
RCS  
–––  
°C/W  
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)   
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak)   
Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)  
–––  
–––  
–––  
–––  
–––  
–––  
50  
40  
62  
RJA  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min.  
Typ.  
Max. Units  
Conditions  
V(BR)CES  
V(BR)CES/TJ  
Collector-to-Emitter Breakdown Voltage  
Temperature Coeff. of Breakdown Voltage  
600  
0.52  
V
VGE = 0V, IC = 100µA   
V/°C VGE = 0V, IC = 100µA (25°C-175°C)  
1.75  
2.15  
2.20  
2.05  
IC = 4.0A, VGE = 15V, TJ = 25°C  
V
V
VCE(on)  
VGE(th)  
Collector-to-Emitter Saturation Voltage  
IC = 4.0A, VGE = 15V, TJ = 150°C  
IC = 4.0A, VGE = 15V, TJ = 175°C  
VCE = VGE, IC = 100µA  
Gate Threshold Voltage  
4.0  
6.5  
Threshold Voltage Temperature Coeff.  
Forward Transconductance  
-19  
mV/°C VCE = VGE, IC =100µA (25°C-175°C)  
VGE(th)/TJ  
gfe  
2.2  
0.50  
100  
1.7  
1.5  
25  
±100  
2.3  
S
µA  
V
V
V
CE = 50V, IC = 4.0A, PW = 20µs  
GE = 0V, VCE = 600V  
GE = 0V, VCE = 600V, TJ = 175°C  
ICES  
IGES  
VF  
Collector-to-Emitter Leakage Current  
Gate-to-Emitter Leakage Current  
Diode Forward Voltage Drop  
nA VGE = ±20V  
V
IF = 4.0A  
IF = 4.0A, TJ = 175°C  
2
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IRGR/S/B4607DPbF  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Total Gate Charge  
Min.  
Typ.  
Max Units  
Conditions  
Qg  
9.0  
3.0  
4.0  
140  
62  
202  
27  
15  
IC = 4.0A  
VGE = 15V  
Qge  
Qgc  
Eon  
Eoff  
Etotal  
td(on)  
tr  
td(off)  
tf  
Eon  
Gate-to-Emitter Charge  
Gate-to-Collector Charge  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
Turn-Off delay time  
Fall time  
Turn-On Switching Loss  
nC  
µJ  
VCC = 300V  
IC = 4.0A, VCC = 400V, VGE = 15V  
RG = 100, TJ = 25°C  
Energy losses include tail & diode  
reverse recovery   
ns  
µJ  
120  
10  
220  
Eoff  
Etotal  
td(on)  
tr  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
92  
312  
24  
IC = 4.0A, VCC = 400V, VGE = 15V  
RG = 100, TJ = 175°C  
Energy losses include tail & diode  
reverse recovery   
27  
ns  
td(off)  
Turn-Off delay time  
81  
tf  
Fall time  
14  
250  
20  
Cies  
Coes  
Cres  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGE = 0V  
pF  
VCC = 30V  
f = 1.0Mhz  
TJ = 175°C, IC = 16A  
7.1  
FULL SQUARE  
V
CC = 480V, Vp 600V  
VGE = +20V to 0V  
CC = 400V, Vp 600V  
RBSOA  
Reverse Bias Safe Operating Area  
V
SCSOA  
Short Circuit Safe Operating Area  
5
µs  
VGE = +15V to 0V  
TJ = 175°C  
Erec  
trr  
Reverse Recovery Energy of the Diode  
Diode Reverse Recovery Time  
7.4  
48  
µJ  
ns  
A
VCC = 400V, IF = 4.0A  
VGE = 15V, Rg = 100  
Irr  
Peak Reverse Recovery Current  
5.1  
Notes:  
VCC = 80% (VCES), VGE = 20V.  
Ris measured at TJ of approximately 90°C.  
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  
Pulse width limited by max. junction temperature.  
Values influenced by parasitic L and C in measurement.  
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques  
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf  
3
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IRGR/S/B4607DPbF  
14  
12  
10  
8
For both:  
Duty cycle : 50%  
Tj = 175°C  
Tcase = 100°C  
Gate drive as specified  
Power Dissipation = 29W  
6
4
2
0
0.1  
1
10  
100  
f , Frequency ( kHz )  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
70  
60  
50  
40  
30  
20  
10  
0
12  
10  
8
6
4
2
0
25  
50  
75  
100  
(°C)  
125  
150  
175  
25  
50  
75  
100  
(°C)  
125  
150  
175  
T
T
C
C
Fig. 3 - Power Dissipation vs.  
Fig. 2 - Maximum DC Collector Current vs.  
Case Temperature  
Case Temperature  
100  
10  
1
10  
1
10µsec  
100µsec  
1msec  
DC  
0.1  
0.01  
Tc = 25°C  
Tj = 175°C  
Single Pulse  
10  
100  
1000  
1
10  
100  
V
(V)  
V
(V)  
CE  
CE  
Fig. 5 - Reverse Bias SOA  
TJ = 175°C; VGE = 20V  
Fig. 4 - Forward SOA  
TC = 25°C; TJ 175°C; VGE = 15V  
4
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IRGR/S/B4607DPbF  
16  
12  
8
16  
12  
8
V
V
V
V
V
= 18V  
= 15V  
= 12V  
= 10V  
= 8.0V  
GE  
GE  
GE  
GE  
GE  
V
V
V
V
V
= 18V  
= 15V  
= 12V  
= 10V  
= 8.0V  
GE  
GE  
GE  
GE  
GE  
4
4
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
(V)  
V
(V)  
CE  
CE  
Fig. 6 - Typ. IGBT Output Characteristics  
Fig. 7 - Typ. IGBT Output Characteristics  
TJ = -40°C; tp = 20µs  
TJ = 25°C; tp = 20µs  
16  
30  
V
V
V
V
V
= 18V  
= 15V  
= 12V  
= 10V  
= 8.0V  
GE  
GE  
GE  
GE  
GE  
14  
12  
10  
8
175°C  
25°C  
-40°C  
25  
20  
15  
10  
5
6
4
2
0
0
0
2
4
6
8
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
(V)  
V
(V)  
CE  
F
Fig. 9 - Typ. Diode Forward Voltage Drop  
Fig. 8 - Typ. IGBT Output Characteristics  
Characteristics  
TJ = 175°C; tp = 20µs  
6
5
6
5
I
= 8.0A  
= 4.0A  
= 2.0A  
I
= 8.0A  
= 4.0A  
= 2.0A  
CE  
CE  
I
I
CE  
4
3
2
1
0
4
3
2
1
0
CE  
I
I
CE  
CE  
5
10  
15  
20  
5
10  
15  
20  
V
(V)  
V
(V)  
GE  
GE  
Fig. 10 - Typical VCE vs. VGE  
Fig. 11 - Typical VCE vs. VGE  
TJ = -40°C  
TJ = 25°C  
5
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IRGR/S/B4607DPbF  
16  
12  
8
6
5
4
3
2
1
0
I
= 8.0A  
= 4.0A  
= 2.0A  
CE  
T = 25°C  
J
I
CE  
T = 175°C  
J
I
CE  
4
0
4
6
8
10  
V
12  
(V)  
14  
16  
18  
5
10  
15  
20  
V
(V)  
GE  
GE  
Fig. 13 - Typ. Transfer Characteristics  
Fig. 12 - Typical VCE vs. VGE  
VCE = 50V; tp = 20µs  
TJ = 175°C  
1000  
100  
10  
600  
500  
400  
300  
200  
100  
0
E
td  
ON  
OFF  
E
OFF  
td  
ON  
t
R
t
F
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
I
(A)  
I
(A)  
C
C
Fig. 14 - Typ. Energy Loss vs. IC  
Fig. 15 - Typ. Switching Time vs. IC  
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V  
TJ = 175°C; VCE = 400V, RG = 100; VGE = 15V  
250  
100  
td  
200  
OFF  
E
ON  
td  
ON  
150  
100  
10  
t
F
E
t
OFF  
R
50  
0
1
0
20  
40  
Rg (  
60  
80  
100  
0
20  
40  
60  
80  
100  
)
R
( )  
G
Fig. 17 - Typ. Switching Time vs. RG  
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V  
Fig. 16 - Typ. Energy Loss vs. RG  
TJ = 175°C; VCE = 400V, ICE = 4.0A; VGE = 15V  
6
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IRGR/S/B4607DPbF  
14  
12  
10  
8
12  
10  
8
10  
R
G =  
R
22  
G =  
R
R
47  
G =  
G =  
  
6
6
4
4
2
3
4
5
(A)  
6
7
8
0
20  
40  
60  
  
80  
100  
I
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG  
Fig. 18 - Typ. Diode IRR vs. IF  
TJ = 175°C  
TJ = 175°C  
12  
10  
8
300  
250  
200  
150  
100  
10  
8.0A  
22  
4.0A  
47  
6
100  
2.0A  
4
200  
400  
600  
800  
1000  
200  
400  
600  
800  
1000  
di /dt (A/µs)  
F
di /dt (A/µs)  
F
Fig. 20 - Typ. Diode IRR vs. diF/dt  
CC = 400V; VGE = 15V; IF = 4.0A; TJ = 175°C  
Fig. 21 - Typ. Diode QRR vs. diF/dt  
CC = 400V; VGE = 15V; TJ = 175°C  
V
V
25  
20  
15  
10  
5
25  
20  
15  
10  
5
120  
= 10  
R
G
R
I
T
sc  
sc  
100  
80  
60  
40  
20  
= 22  
G
= 47  
R
G
G
R
= 100  
0
0
9
10  
11  
12  
V
13  
14  
15  
16  
2
4
6
8
(V)  
I
(A)  
GE  
F
Fig. 23 - VGE vs. Short Circuit Time  
CC = 400V; TC = 25°C  
Fig. 22 - Typ. Diode ERR vs. IF  
V
TJ = 175°C  
7
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IRGR/S/B4607DPbF  
1000  
100  
10  
16  
14  
12  
10  
8
V
V
= 400V  
CES  
= 300V  
CES  
Cies  
6
Coes  
Cres  
4
2
1
0
0
100  
200  
300  
(V)  
400  
500  
600  
0
2
4
6
8
10  
V
Q
, Total Gate Charge (nC)  
G
CE  
Fig. 25 - Typical Gate Charge vs. VGE  
CE = 4.0A  
Fig. 24 - Typ. Capacitance vs. VCE  
I
VGE= 0V; f = 1MHz  
10  
D = 0.50  
1
0.20  
0.10  
Ri (°C/W)  
0.269077  
0.909352  
0.901247  
0.520324  
i (sec)  
0.000044  
0.000062  
0.001172  
0.010981  
R1  
R1  
R2  
R2  
R3  
R3  
R4  
R4  
0.05  
0.1  
J J  
CC  
0.02  
0.01  
1 1  
2 2  
3 3  
4 4  
Ci= iRi  
Ci= iRi  
0.01  
SINGLE PULSE  
( THERMAL RESPONSE )  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)  
100  
10  
D = 0.50  
0.20  
Ri (°C/W)  
i (sec)  
0.000094  
0.000484  
0.000971  
0.017217  
1
0.10  
0.05  
R1  
R1  
R2  
R2  
R3  
R3  
R4  
R4  
0.818307  
2.548997  
2.967111  
1.975585  
J J  
CC  
0.02  
0.01  
1 1  
2 2  
0.1  
3 3  
4 4  
Ci= iRi  
Ci= iRi  
0.01  
0.001  
SINGLE PULSE  
( THERMAL RESPONSE )  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)  
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IRGR/S/B4607DPbF  
L
L
80 V  
+
-
VCC  
DUT  
0
DUT  
VCC  
1K  
Rg  
Fig.C.T.1 - Gate Charge Circuit (turn-off)  
Fig.C.T.2 - RBSOA Circuit  
diode clamp /  
DUT  
L
4X  
DC  
DUT  
VCC  
-5V  
Rg  
DUT /  
DRIVER  
VCC  
RSH  
Fig.C.T.3 - S.C. SOA Circuit  
Fig.C.T.4 - Switching Loss Circuit  
C force  
R = VCC  
ICM  
100K  
D1 22K  
C sense  
VCC  
DUT  
DUT  
G force  
0.0075µF  
Rg  
E sense  
E force  
Fig.C.T.5 - Resistive Load Circuit  
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Fig.C.T.6 - BVCES Filter Circuit  
9
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IRGR/S/B4607DPbF  
600  
500  
400  
300  
200  
100  
0
12  
10  
8
600  
500  
400  
300  
200  
100  
0
12  
tf  
tr  
10  
8
TEST  
CURRENT  
6
6
80% ICE  
4
4
10% VCE  
90% ICE  
10%ICE  
2
10% ICE  
2
10% VCE  
0
0
Eoff Loss  
Eon Loss  
-2  
-100  
-2  
-100  
-0.3  
0
0.3  
0.6  
-0.3  
0
0.3  
0.6  
time(µs)  
time (µs)  
Fig. WF1 - Typ. Turn-off Loss Waveform  
Fig. WF2 - Typ. Turn-on Loss Waveform  
@ TJ = 175°C using Fig. CT.4  
@ TJ = 175°C using Fig. CT.4  
600  
30  
6
500  
400  
300  
200  
100  
0
25  
20  
15  
10  
5
VCE  
4
2
QRR  
t
RR  
ICE  
0
-2  
-4  
-6  
Peak  
IRR  
0
-100  
-5  
-5  
0
5
10  
-0.10 0.00 0.10 0.20 0.30 0.40  
time (µs)  
time (µs)  
Fig. WF3 - Typ. Diode Recovery Waveform  
Fig. WF4 - Typ. S.C. Waveform  
@ TJ = 175°C using Fig. CT.4  
@ TJ = 150°C using Fig. CT.3  
10  
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IRGR/S/B4607DPbF  
D-Pak (TO-252AA) Package Outline  
Dimensions are shown in millimeters (inches)  
D-Pak (TO-252AA) Part Marking Information  
E X A M P L E :  
T H I S I S A N IR F R 1 2 0  
P A R T  
N
U
M
B
E R  
W
IT H A S S E M  
B
L Y  
I N T E R N A T IO  
R E C T IF I E R  
N
A L  
L O  
T
C
O
D
E
1 2 3 4  
D
A T E  
C
O
D
E
I R  
F
U
1
2 0  
A S S E M  
B
L E D  
O
N
W
W
1 6 , 1 9 9 9  
Y E A R  
9
=
1 9 9 9  
L O  
G
O
9
1
6 A  
I N T H  
E
A S S E M  
B
L Y L IN  
E
"A "  
1
2
3
4
W
E E K 1 6  
L I N  
E
A
A S S E M  
B
L Y  
L O  
T
C
O
D
E
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
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November 14, 2014  
IRGR/S/B4607DPbF  
D-Pak (TO-252AA) Tape and Reel Information  
Dimensions are shown in millimeters (inches)  
TR  
TRL  
TRR  
16.3 ( .641 )  
15.7 ( .619 )  
16.3 ( .641 )  
15.7 ( .619 )  
12.1 ( .476 )  
11.9 ( .469 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
FEED DIRECTION  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
13 INCH  
16 mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
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November 14, 2014  
IRGR/S/B4607DPbF  
D2-PAK (TO-263AB) Package Outline  
Dimensions are shown in millimeters (inches)  
D2-Pak (TO-263AB) Part Marking Information  
THIS IS AN IRF530S WITH  
LOT CODE 8024  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
ASSEMBLED ON WW 02, 2000  
IN THE ASSEMBLY LINE "L"  
F530S  
DATE CODE  
YEAR 0 = 2000  
WEEK 02  
ASSEMBLY  
LOT CODE  
LINE L  
OR  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
F530S  
DATE CODE  
P = DESIGNATES LEAD - FREE  
PRODUCT (OPTIONAL)  
ASSEMBLY  
LOT CODE  
YEAR 0 = 2000  
WEEK 02  
A = ASSEMBLY SITE CODE  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
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November 14, 2014  
IRGR/S/B4607DPbF  
D2Pak (TO-263AB) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FEED DIRECTION  
1.85 (.073)  
11.60 (.457)  
11.40 (.449)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
TRL  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
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November 14, 2014  
IRGR/S/B4607DPbF  
TO-220AB Package Outline  
(Dimensions are shown in millimeters (inches))  
TO-220AB Part Marking Information  
E
X A  
M
P
L E  
:
T H IS IS  
A
D
N
IR  
F
1 0 1 0  
P
A R T N U M B E R  
L O  
T
S
C
O
E
1 7 8 9  
IN T E  
R
C
N
A
T IO  
T IF IE  
L O  
N A L  
R
R
E
A
S
E
M
B
L E  
D
O
N
W
W
1 9 , 2 0 0 0  
G
O
IN T H  
E
A
S
S
E
M
B
L Y L IN "C  
E
"
D
A T E C O D E  
Y E  
A
R
0
=
2 0 0 0  
N
o
t e : "P  
in  
"
in  
a
s s e m  
b
ly lin  
e
F
p
o
s it io  
n
A
L O  
S
S
T
E M B L Y  
C O D E  
W
E E K 1 9  
d
ic a t e s "L e a d  
-
r e e "  
L IN  
E C  
TO-220AB package is not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
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November 14, 2014  
IRGR/S/B4607DPbF  
Qualification Information†  
Qualification Level  
Industrial  
(per JEDEC JESD47F) ††  
D-Pak  
D2Pak  
MSL1  
MSL1  
N/A  
Moisture Sensitivity Level  
RoHS Compliant  
TO-220  
Yes  
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/  
†† Applicable version of JEDEC standard at the time of product release.  
Revision History  
Date  
Comments  
Updated typo on V(BR)CES test condition from “250uA” to “100uA” on page 2.  
Updated Package outline on pages 11, 13 & 15.  
7/9/2014  
Added note to IFM Diode Maximum Forward Current VGE = 15V on page 1.  
Removed note from switching losses test condition on page 3.  
11/14/2014  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
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© 2014 International Rectifier  
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November 14, 2014  

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