IRH9150PBF [INFINEON]
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Infineon 
PD - 90879C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
IRH9150
100V, P-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRH9150
IRH93150
100K Rads (Si) 0.075Ω -22A
300K Rads (Si) 0.075Ω -22A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AE
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-22
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-14
-88
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
150
W
W/°C
V
D
C
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.5
mJ
V/ns
AR
dv/dt
-23
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
Lead Temperature
Weight
For footnotes refer to the last page
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1
02/18/03
IRH9150
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.093
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.075
0.080
-4.0
—
Ω
V
V
= -12V, I = -14A
D
DS(on)
GS
GS
➀
= -12V, I = -22A
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
11
—
V
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -14A ➀
DS
V
DS
I
-25
= -80V ,V =0V
DS GS
DSS
µA
—
-250
V
= -80V,
DS
= 0V, T = 125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
200
35
V
= -20V
GSS
GSS
GS
nA
nC
V
GS
= 20V
Q
Q
Q
=-12V, I = -22A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
DS
= -50V
48
40
t
t
t
t
V
=-50V, I = -22A
D
DD
V =-12V, R = 2.35Ω
GS
150
100
190
—
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
S
+ L
Total Inductance
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
Input Capacitance
—
—
—
4300
1100
310
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-22
-88
-3.0
250
1.5
S
A
SM
V
V
T = 25°C, I = -22A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = -22A, di/dt ≤ -100A/µs
j
rr
RR
F
V
DD
≤ -50V ➀
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
R
thCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.83
30
°C/W
Typical socket mount
0.12
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRH9150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage -100
—
-4.0
-100
100
-100
-2.0
—
—
-5.0
-100
100
V
= 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
-2.0
—
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GSS
DSS
GS
nA
—
—
V
GS
—
-25
—
-25
µA
V
=-80V, V =0V
GS
DS
R
Static Drain-to-Source
On-State Resistance
Diode Forward Voltage
➀
—
0.075
—
0.085
Ω
V
= -12V, I =-14A
D
GS
DS(on)
V
SD
➀
—
-3.0
—
-3.0
V
V
= 0V, I = -22A
GS S
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V
-100
@VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
28
285
305
345
43
39
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
59.9
-100
32.8
-60
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRH9150
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
100
TOP
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
-5.0V
10
20µs PULSE WIDTH
°
20µs PULSE WIDTH
T = 25 C
J
T = 150 C
J
10
°
1
10
100
10
1
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
-22A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
10
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRH9150
7000
20
16
12
8
V
= 0V,
f = 1MHz
C
GS
I
D
= -22A
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-80V
=-50V
=-20V
C
= C
gd
6000
5000
4000
3000
2000
1000
0
rss
DS
DS
DS
C
= C + C
ds
oss
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
100us
J
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
1
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRH9150
Pre-Irradiation
RD
24
20
16
12
8
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
x Z + T
thJC C
J
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRH9150
L
1200
1000
800
600
400
200
0
V
D S
I
D
TOP
-9.8A
-14A
BOTTOM -22A
D .U .T
R
G
V
D D
A
I
A S
D R IV ER
V
-
GS
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
-
-12 V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRH9150
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -25V, starting T = 25°C, L=2.06mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -22A, V
=-12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
≤ -22A, di/dt ≤ -450A/µs,
DS
= 0 during
SD
DD
-80 volt V
applied and V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — TO-204AE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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This datasheet has been download from:
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Datasheets for electronics components.
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