IRHLF770Z4SCS [INFINEON]
Rad hard, 60V, 1.6A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL;
| 型号： | IRHLF770Z4SCS |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 60V, 1.6A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL |
| 文件： | 总9页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94695F
2N7621T2
IRHLF770Z4
60V, N-CHANNEL
TECHNOLOGY
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLF770Z4 100K Rads (Si)
IRHLF730Z4 300K Rads (Si)
0.6Ω
0.6Ω
1.6A*
1.6A*
T0-39
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Complimentary P-Channel Available -
IRHLF7970Z4
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
1.6*
D
GS
GS
C
= 4.5V, T = 100°C Continuous Drain Current
C
1.0*
6.4
A
D
I
Pulsed Drain Current À
DM
@ T = 25°C
P
Max. Power Dissipation
5.0
W
W/°C
V
D
C
Linear Derating Factor
0.04
±10
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
6.9
mJ
A
AS
I
1.6
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
0.5
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
For footnotes refer to the last page
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1
09/16/10
IRHLF770Z4, 2N7621T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.08
—
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.60
Ω
V = 4.5V, I = 1.0A Ã
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
1.0
—
1.1
—
—
-3.5
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
V
= 10V, I
= 1.0A Ã
DS
I
Zero Gate Voltage Drain Current
= 48V ,V = 0V
GS
DSS
DS
µA
—
V
= 48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
2.6
0.8
1.5
6.5
14
30
13
—
V
= 10V
= -10V
GSS
GSS
GS
nA
V
GS
Q
Q
Q
V
= 4.5V, I = 1.6A
V
g
gs
gd
d(on)
r
GS
D
= 30V
nC
DS
t
t
t
t
V
V
= 30V, I = 1.6A,
= 4.5V, R = 24Ω
DD
GS
D
G
ns
d(off)
f
L
+ L
Measured from Drain lead (6mm/0.25in
from package)to Source lead (6mm/0.25in
from package)with Source wire interanally
bonded from Source pin to Drain pad
nH
S
D
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
152
39
1.6
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
GS
DS
C
C
pF
oss
rss
f = 5.0MHz, open drain
R
g
Gate Resistance
Ω
17
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
1.6*
6.4
1.2
78
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 1.6A, V
= 0V Ã
j
S
GS
T = 25°C, I = 1.6A, di/dt ≤ 100A/µs
j
F
150
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Derated to match the complimentary P-Channel logic level power MOSFET - IRHLF7970Z4
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLF770Z4, 2N7621T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads(Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
V
= 0V, I = 250µA
D
DSS
GS
GS
V
V
= V , I = 250µA
GS(th)
DS
D
I
V
= 10V
GS
GSS
nA
µA
I
V
GS
= -10V
GSS
I
V
= 48V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
DS(on)
—
—
0.6
1.2
Ω
V
V
V
= 4.5V, I = 1.0A
D
= 0V, I = 1.6A
D
GS
V
SD
GS
1. Part numbers IRHLF770Z4, IRHLF730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
-2V
@VGS=
-4V
@VGS=
-5V
@VGS=
-6V
@VGS=
-7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
60
60
60
60
60
60
60
60
60
60
60
40
60
30
-
35
-
-
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLF770Z4, 2N7621T2
Pre-Irradiation
10
10
VGS
VGS
7.5V
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
BOTTOM 2.25V
1
1
2.25V
2.25V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= 1.6A
D
T
= 150°C
J
T
= 25°C
J
1
0
V
= 25V
DS
0µ
V
= 4.5V
GS
6
s PULSE WIDTH
2
2.5
3
3.5
4
4.5
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLF770Z4, 2N7621T2
4
3.5
3
1.2
1.0
0.8
0.6
0.4
0.2
I
= 1.6A
D
T = 150°C
J
2.5
2
T
= 150°C
= 25°C
J
1.5
1
T
= 25°C
T
J
J
0.5
0
Vgs = 4.5V
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
6
7
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
80
70
60
50
3.0
I
= 1.0mA
D
2.5
2.0
1.5
1.0
0.5
0.0
I
= 50µA
D
D
D
D
I
I
I
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T , Temperature ( °C )
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
BreakdownVoltageVsTemperature
Temperature
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5
IRHLF770Z4, 2N7621T2
Pre-Irradiation
250
12
10
8
V
= 0V,
f = 1MHz
gd , ds
GS
V
V
V
= 48V
C
= C + C
gs
C
SHORTED
I
= 1.6A
DS
DS
DS
iss
D
C
= C
gd
= C + C
ds
= 30V
= 12V
rss
C
200
150
100
50
oss
gd
C
iss
C
oss
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
T
= 150°C
= 25°C
T
J
J
1
V
GS
= 0V
0.1
25
50
75
100
125
°
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
T , Case Temperature ( C)
C
V
SD
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHLF770Z4, 2N7621T2
14
12
10
8
100
I
D
OPERATION IN THIS AREA LIMITED
BY R (on)
TOP
0.7A
1.0A
1.6A
DS
10
1
BOTTOM
µ
100 s
1ms
6
10ms
4
0.1
0.01
DC
Tc = 25°C
Tj = 150°C
Single Pulse
2
0
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. DrainCurrent
100
10
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
( THERMAL RESPONSE )
0.05
t
2
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHLF770Z4, 2N7621T2
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
4.5V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
PulseWidth ≤ 1µs
Duty Factor≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLF770Z4, 2N7621T2
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 5.4 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 1.6A, V
= 10V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
SD
≤ 1.6A, di/dt ≤ 92A/µs,
DS
= 0 during
48 volt V
applied and V
V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
DD
J
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1 - SOURCE
2 - GATE
3 - DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2010
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9
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IRHLF7970Z4SCS
Rad hard, -60V, -1.6A, single, P-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QIRL
INFINEON
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