IRHLF77110 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39); 抗辐射的逻辑电平功率MOSFET直通孔（ TO- 39 ）
| 型号： | IRHLF77110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| 文件： | 总9页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97062
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF77110
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLF77110
IRHLF73110
100K Rads (Si) 0.30Ω
300K Rads (Si) 0.30Ω
6.0A
6.0A
T0-39
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 4.5V, T =25°C
Continuous Drain Current
6.0
D
GS
GS
C
A
I
D
= 4.5V, T =100°C Continuous Drain Current
3.7
24
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
23
W
W/°C
V
D
C
0.18
±10
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
43
mJ
A
AS
I
6.0
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.3
mJ
V/ns
AR
dv/dt
4.9
T
-55 to 150
J
°
T
Storage Temperature Range
C
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/06
IRHLF77110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.10
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.30
Ω
V
GS
= 4.5V, I = 3.7A
D
DS(on)
Ã
V
Gate Threshold Voltage
1.0
—
3.0
—
—
-5.7
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
V
= 10V, I
= 3.7A Ã
DS
DS
I
Zero Gate Voltage Drain Current
= 80V ,V = 0V
DSS
DS
GS
µA
—
V
= 80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
9.0
3.2
4.8
12
83
34
8.0
—
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
V
= 4.5V, I = 6.0A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
DD
V
= 50V, I = 6.0A,
D
ns
= 5.0V, R = 7.5Ω
GS G
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
577
117
1.6
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
—
6.6
—
Ω
f = 1.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
6.0
24
1.2
260
904
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 6.0A, V
= 0V Ã
j
S
GS
T = 25°C, I = 6.0A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
5.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLF77110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads(Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
1.0
—
—
—
—
2.0
100
-100
1.0
V
V
= 0V, I = 250µA
D
DSS
GS
GS
V
V
= V , I = 250µA
GS(th)
DS
D
I
V
GS
= 10V
GSS
nA
µA
I
V
= -10V
GS
GSS
I
V
= 80V, V = 0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
DS(on)
—
—
0.30
1.2
Ω
V
V
V
= 4.5V, I = 3.7A
D
= 0V, I = 6.0A
D
GS
V
GS
SD
1. Part numbers IRHLF77110, IRHLF73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
100
100
100
-2V
100
100
100
-4V
100
100
100
-5V
100
100
100
-6V
100
100
-
-7V
-8V
Br
I
37
60
84
305
370
390
39
34
30
100
100
100
100
100
-
-
-
-
Au
120
100
80
60
40
20
0
Br
I
Au
0
-1 -2 -3 -4 -5 -6 -7 -8
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLF77110
Pre-Irradiation
100
100
10
1
VGS
10V
VGS
10V
TOP
TOP
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
10
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
1
2.5V
µ
20 s PULSE WIDTH
Tj = 150°C
µ
20 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 6.0A
D
T
= 150°C
J
T
= 25°C
J
V
DS
= 50V
V
= 4.5V
GS
0µ
2
s PULSE WIDTH
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
3
4
5
6
7
8
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLF77110
130
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
120
110
100
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Temperature ( °C )
T
T
J
J
Fig 6. Typical Threshold Voltage Vs
Fig 5. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Temperature
1600
1400
1200
1000
800
600
400
200
0
12
V
= 0V,
= C
f = 1 MHz
GS
I
= 6.0A
V
V
V
= 80V
= 50V
= 20V
D
DS
DS
DS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10
8
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 15
0
1
10
100
0
2
4
6
8
10 12 14 16 18 20
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G,
DS
Fig 8. Typical Gate Charge Vs.
Fig 7. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
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5
IRHLF77110
Pre-Irradiation
6
5
4
3
2
1
0
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µs
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
T
, Case Temperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Safe Operating Area
CaseTemperature
10
D = 0.50
0.20
0.10
1
P
DM
0.05
SINGLE PULSE
( THERMAL RESPONSE )
t
1
0.02
t
2
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHLF77110
100
10
100
80
60
40
20
0
I
D
TOP
BOTTOM
2.7A
3.8A
6.0A
T
= 150°C
J
5°C
= 2
T
J
1
V
= 0V
GS
0.1
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
V
, Source-to-Drain Voltage (V)
Starting T , Junction Temperature (°C)
SD
J
Fig 12. Typical Source-to-Drain Diode
Fig 13a Maximum Avalanche Energy
ForwardVoltage
Vs. DrainCurrent
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
t
Ω
p
I
AS
Fig 13b. Unclamped Inductive Test Circuit
Fig 13c. Unclamped Inductive Waveforms
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7
IRHLF77110
Pre-Irradiation
RD
VDS
VGS
V
DS
90%
VDD
D.U.T.
RG
+
-
10%
VGS
V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
4.5V
+
V
DS
Q
Q
GD
D.U.T.
-
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 15a. Basic Gate Charge Waveform
Fig 15b. Gate Charge Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLF77110
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 2.4 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 6.0A, V
= 10V
L
GS
Å Total Dose Irradiation with V Bias.
Â
I
V
≤ 6.0A, di/dt ≤ 190A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2006
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9
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