IRHLF7970Z4PBF [INFINEON]
Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN;
| 型号： | IRHLF7970Z4PBF |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 开关 晶体管 |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94685E
2N7631T2
IRHLF7970Z4
60V, P-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLF7970Z4 100K Rads (Si) 1.35Ω -1.5A
IRHLF7930Z4 300K Rads (Si) 1.35Ω -1.5A
T0-39
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within acceptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLF770Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
= -4.5V, T = 25°C Continuous Drain Current
-1.5
D
D
GS
GS
C
A
I
@ V
= -4.5V, T = 100°C Continuous Drain Current
-1.0
-6.0
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
DM
@ T = 25°C
P
5.0
W
W/°C
V
D
C
0.04
±10
V
GS
E
11
mJ
A
AS
I
-1.5
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
0.5
mJ
V/ns
AR
dv/dt
-4.0
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
°C
g
STG
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
Weight
For footnotes refer to the last page
www.irf.com
1
11/02/10
IRHLF7970Z4, 2N7631T2
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.06
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
—
—
1.35
Ω
V
= -4.5V, I = -1.0A
DS(on)
GS D
Ã
-1.0
—
1.0
—
—
3.12
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS
GS(th)
DS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
= -10V, I = -1.0A Ã
DS
DS
V
I
Zero Gate Voltage Drain Current
= -48V ,V = 0V
DSS
DS
GS
—
V
= -48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
2.8
1.8
0.8
24
45
12
27
—
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -4.5V, I = -1.5A
g
gs
gd
d(on)
r
GS D
V
DS
= -30V
t
t
t
t
V
DD
V
= -30V, I = -1.5A,
D
ns
= -4.5V, R = 24Ω
GS G
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.) with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
177
40
8.0
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
g
—
—
72
Ω
f = 5.0MHz, open drain
Gate Resistance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-1.5
-6.0
-5.0
40
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -1.5A, V
= 0V Ã
j
S
GS
T = 25°C, I =-1.5A, di/dt ≤ -100A/µs
j
F
Q
50
V
DD
≤ -25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLF7970Z4, 2N7631T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads(Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
-60
-1.0
—
—
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
GS
V
V
-2.0
-100
100
-1.0
= V , I = -250µA
GS(th)
DS
D
I
I
V
V
GS
= -10V
= 10V
GSS
GS
nA
µA
GSS
I
V
= -48V, V = 0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-39)
Diode Forward Voltage
—
—
1.35
-5.0
Ω
V
V
= -4.5V, I = -1.0A
D
= 0V, I = -1.5A
D
GS
V
SD
V
GS
1. Part numbers IRHLF7970Z4, IRHLF7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
2V
@VGS=
4V
@VGS=
5V
@VGS=
6V
@VGS=
7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLF7970Z4, 2N7631T2
Pre-Irradiation
10
10
VGS
-10V
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
VGS
-10V
TOP
TOP
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
BOTTOM -2.25V
1
1
2.25V
-
2.25V
-
60µs PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= -1.5A
T
= 25°C
D
J
T
= 150°C
J
1
V
= -25V
DS
V
= -4.5V
GS
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLF7970Z4, 2N7631T2
5.4
4.8
4.2
3.6
3.0
2.4
1.8
1.2
0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I
= -1.5A
D
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
Vgs = -4.5V
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2
3
4
5
6
7
8
9
10 11 12
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
2.5
75
70
65
60
55
50
I
= -1.0mA
D
2.0
1.5
1.0
0.5
0.0
I
= -50µA
D
D
D
D
I
I
I
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHLF7970Z4, 2N7631T2
Pre-Irradiation
12
10
8
250
V
= 0V,
f = 1MHz
gd , ds
GS
I
= -1.5A
V
= -48V
DS
C
= C + C
gs
C
SHORTED
D
iss
C
= C
gd
= C + C
ds
VDS = -30V
VDS = -12V
rss
C
200
150
100
50
oss
gd
C
iss
6
4
C
oss
2
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V , Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G,
Fig 9. Typical Capacitance
Vs.Drain-to-SourceVoltage
Fig 10. Typical Gate Charge Vs.
Gate-to-SourceVoltage
1.6
10
1.2
0.8
0.4
0
T
= 150°C
J
T
= 25°C
J
1
V
5
= 0V
GS
0.1
25
50
T
75
100
125
150
0
1
2
3
4
6
7
, Case Temperature (°C)
-V
, Source-to-Drain Voltage (V)
C
SD
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-Drain Diode
CaseTemperature
ForwardVoltage
6
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Pre-Irradiation
IRHLF7970Z4, 2N7631T2
100
25
20
15
10
5
I
D
OPERATION IN THIS AREA LIMITED
BY R (on)
TOP
-0.7A
-0.9A
DS
10
1
BOTTOM -1.5A
100 s
µ
1ms
10ms
0.1
0.01
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
-V
DS
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. Drain Current
100
D = 0.50
0.20
10
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig15. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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7
IRHLF7970Z4, 2N7631T2
Pre-Irradiation
L
V
I
DS
AS
D.U.T
R
.
G
V
DD
I
A
AS
DRIVER
V
-20V
GS
0.01
Ω
t
p
t
p
15V
V
(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig16b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
-4.5V
.2µF
12V
.3µF
-
Q
Q
GD
GS
V
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
10%
VDD
D.U.T.
RG
-
+
VGS
90%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLF7970Z4, 2N7631T2
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-10 volt V
applied and V
Á V
= -25V, starting T = 25°C, L= 9.7mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -1.5A, V
= -10V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ -1.5A, di/dt ≤ -170A/µs,
DS
applied and V = 0 during
GS
SD
DD
-48 volt V
V
≤ -60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1 - SOURCE
2 - GATE
3 - DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/2010
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9
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