IRHLG730Z4 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET; 抗辐射的逻辑电平功率MOSFET
| 型号： | IRHLG730Z4 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| 文件： | 总9页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95865
RADIATION HARDENED
IRHLG770Z4
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
60V, Quad N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG770Z4 100K Rads (Si)
IRHLG730Z4 300K Rads (Si)
0.6Ω 1.07A
0.6Ω 1.07A
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Light Weight
Complimentary P-Channel Available -
IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
1.07
D
D
GS
GS
C
A
I
= 4.5V, T = 100°C Continuous Drain Current
0.67
4.28
1.0
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.01
±10
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
13
mJ
A
AS
I
1.07
0.1
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
7.0
T
-55 to 150
J
°C
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
12/28/06
IRHLG770Z4
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.08
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.6
Ω
V = 4.5V, I = 0.67A
GS D
DS(on)
Ã
V
Gate Threshold Voltage
1.0
—
0.9
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
V
= 10V, I
= 0.67A Ã
DS
I
Zero Gate Voltage Drain Current
= 48V ,V = 0V
DSS
DS
GS
—
V
= 48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 4.5V, I = 1.07A
g
gs
gd
d(on)
r
GS D
V
= 30V
DS
t
t
t
t
V
DD
V
= 30V, I = 1.07A,
= 5.0V, R = 24Ω
D
ns
GS
G
d(off)
11
—
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
162
39
2.1
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
g
—
13.8
—
Ω
f = 1.0MHz, open drain
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
1.07
4.28
1.2
51
S
A
I
SM
V
t
Q
V
ns
nC
T = 25°C, I = 1.07A, V
= 0V Ã
GS
j
SD
rr
RR
S
T = 25°C, I = 1.07A, di/dt ≤ 100A/µs
j
F
V
70
≤ 25V Ã
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125
Typical socket mount
°C/W
thJA
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHLG770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
60
1.0
—
—
—
—
2.0
100
-100
1.0
V
= 0V, I = 250µA
GS D
DSS
V
V
V
GS
= V , I = 250µA
GS(th)
DS
D
I
V
= 10V
GSS
GS
nA
µA
I
V
= -10V
GS
GSS
I
V
= 48V, V = 0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036)
—
0.5
Ω
V
= 4.5V, I = 0.67A
D
GS
GS
R
DS(on)
—
—
0.6
1.2
Ω
V
= 4.5V, I = 0.67A
D
V
Diode Forward Voltage
V
V = 0V, I = 1.07A
GS
D
SD
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
Br
I
37
60
84
305
370
390
39
34
30
20
-
Au
-
70
60
50
40
30
20
10
0
Br
I
Au
0
-2
-4
-6
-8
-10
-12
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLG770Z4
Pre-Irradiation
10
10
VGS
10V
VGS
TOP
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
1
1
2.5V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= 1.07A
D
T
= 150°C
J
1
T
= 25°C
J
V
= 25V
DS
0µ
2
s PULSE WIDTH
V
= 4.5V
GS
0.1
2
2.5
3
3.5
4
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHLG770Z4
80
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
70
60
50
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 5. Typical Drain-to-Source
Fig 6. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
280
240
200
160
120
80
12
V
= 0V,
= C
f = 1 MHz
GS
I
= 1.07A
V
V
V
= 48V
= 30V
= 12V
D
C
C
C
+ C , C
SHORTED
DS
DS
DS
iss
gs
gd
ds
= C
10
8
rss
oss
gd
= C + C
ds
gd
C
iss
C
6
oss
4
2
40
FOR TEST CIRCUIT
SEE FIGURE 15
C
rss
0
0
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 7. Typical Capacitance Vs.
Fig 8. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
www.irf.com
5
IRHLG770Z4
Pre-Irradiation
1.2
1.0
0.8
0.6
0.4
0.2
0
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
0.1
25
50
75
100
125
150
1
10
, Drain-to-Source Voltage (V)
100
T
, Case Temperature (°C)
C
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Safe Operating Area
CaseTemperature
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
0.02
0.01
( THERMAL RESPONSE )
t
1
1
t
2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
www.irf.com
Pre-Irradiation
IRHLG770Z4
32
28
24
20
16
12
8
10
I
D
TOP
BOTTOM
0.48A
0.68A
1.07A
1
T
= 150°C
J
5°C
= 2
T
J
0.1
4
V
= 0V
GS
0
0.01
25
50
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
V
Starting T , Junction Temperature (°C)
SD
J
Fig 13a. Maximum Avalanche Energy
Fig 12. Typical Source-to-Drain Diode
Vs. Drain Current
ForwardVoltage
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
t
Ω
p
I
AS
Fig 13b. Unclamped Inductive Test Circuit
Fig 13c. Unclamped Inductive Waveforms
www.irf.com
7
IRHLG770Z4
Pre-Irradiation
RD
VDS
VGS
V
DS
90%
VDD
D.U.T.
RG
+
-
.
10%
VGS
V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1 %
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
4.5V
+
V
DS
Q
Q
GD
D.U.T.
-
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 15a. Basic Gate Charge Waveform
Fig 15b. Gate Charge Test Circuit
8
www.irf.com
Pre-Irradiation
Footnotes:
IRHLG770Z4
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 22.5mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 1.07A, V
= 10V
L
GS
Å Total Dose Irradiation with V
Bias.
Â
I
V
≤ 1.07A, di/dt ≤ 214A/µs,
DS
= 0 during
SD
DD
48 volt V
applied and V
≤ 60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q2
Q3
Q2
Q4
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2006
www.irf.com
9
相关型号：
IRHLG73214
Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14
INFINEON
IRHLG7630Z4
Power Field-Effect Transistor, 1.07A I(D), 60V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14
INFINEON
IRHLG77214
Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14
INFINEON
IRHLG7930Z4
Small Signal Field-Effect Transistor, 0.71A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14
INFINEON
IRHLG7S7214
250V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET in a MO-036AB package - A IRHLG7S7214 with RadHard Hermetic Packaging
INFINEON
©2020 ICPDF网 联系我们和版权申明