IRHLG73110 [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET; 抗辐射的逻辑电平功率MOSFET的逻辑电平功率MOSFET
| 型号： | IRHLG73110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET LOGIC LEVEL POWER MOSFET |
| 文件： | 总9页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97178
2N7612M1
RADIATION HARDENED
IRHLG77110
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
100V, Quad N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG77110
IRHLG73110
100K Rads (Si) 0.22Ω
300K Rads (Si) 0.22Ω
1.8A
1.8A
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 4.5V, T =25°C
Continuous Drain Current
1.8
D
GS
GS
C
A
I
D
= 4.5V, T =100°C Continuous Drain Current
1.1
7.2
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
1.4
W
W/°C
V
D
C
0.01
±10
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
97
mJ
A
AS
I
1.8
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
0.14
11
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
03/20/08
IRHLG77110, 2N7612M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.11
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.22
Ω
V
GS
= 4.5V, I = 1.1A
D
DS(on)
Ã
V
Gate Threshold Voltage
1.0
—
3.0
—
—
-4.4
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
V
= V , I = 250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
V
= 10V, I
= 1.1A Ã
DS
DS
I
Zero Gate Voltage Drain Current
= 80V ,V = 0V
DSS
DS
GS
—
V
= 80V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
15
2.5
6.0
15
20
65
25
—
V
= 10V
= -10V
GSS
GSS
GS
nA
nC
V
GS
V
= 4.5V, I = 1.8A
g
gs
gd
d(on)
r
GS D
V
= 50V
DS
t
t
t
t
V
DD
V
= 50V, I = 1.8A,
D
ns
= 4.5V, R = 7.5Ω
GS G
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
653
119
2.7
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
—
16
—
Ω
f = 1.0MHz, open drain
g
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
1.8
7.2
1.2
100
223
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = 1.8A, V
= 0V Ã
j
S
GS
T = 25°C, I = 1.8A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
90
°C/W
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
1.0
—
—
—
—
2.0
100
-100
10
V
V
= 0V, I = 250µA
D
DSS
GS
GS
V
V
= V , I = 250µA
GS(th)
DS
D
I
V
GS
= 10V
GSS
nA
µA
I
V
= -10V
GS
GSS
I
V
= 80V, V =0V
GS
DSS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036AB)
—
0.25
Ω
V
= 4.5V, I = 1.1A
D
GS
R
DS(on)
—
—
0.22
1.2
Ω
V
= 4.5V, I = 1.1A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 1.8A
D
GS
SD
1. Part numbers IRHLG77110, IRHLG73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
(MeV/(mg/cm2))
Energy Range
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
(MeV)
(µm)
0V
-1V
100
100
100
-2V
100
100
100
-4V
100
100
100
-5V
100
100
100
-6V
100
100
-
-7V
-8V
Br
I
37
60
84
305
370
390
39
34
30
100
100
100
100
100
-
-
-
-
Au
120
100
80
60
40
20
0
Br
I
Au
0
-1 -2 -3 -4 -5 -6 -7 -8
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLG77110, 2N7612M1
Pre-Irradiation
10
10
VGS
10V
5.0V
4.5V
3.0V
2.75V
2.5V
2.25V
VGS
10V
TOP
TOP
5.0V
4.5V
3.0V
2.75V
2.5V
2.25V
2.0V
BOTTOM 2.0V
BOTTOM 2.0V
1
1
2.0V
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.8A
D
T
= 150°C
J
T
= 25°C
J
1
V
= 50V
s PULSE WIDTH
DS
V
= 4.5V
GS
0µ
6
0.1
2
2.2
2.4
2.6
2.8
3
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T
J
, Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLG77110, 2N7612M1
0.5
0.4
0.3
0.2
0.1
0.4
0.35
0.3
I
= 1.8A
D
T
= 150°C
J
T
T
= 150°C
= 25°C
J
0.25
0.2
T
= 25°C
J
J
0.15
0.1
Vgs = 4.5V
5.5 6.5
0
1
2
3
4
5
6
7
8
9
10 11
0.5
1.5
2.5
3.5
4.5
7.5
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
130
120
110
100
2.5
2.0
1.5
1.0
0.5
0.0
I
= 1.0mA
D
I
I
I
I
= 50µA
D
D
D
D
= 250µA
= 1.0mA
= 150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
Breakdown Voltage Vs Temperature
Temperature
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5
IRHLG77110, 2N7612M1
Pre-Irradiation
1600
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
I = 1.8A
D
V
V
V
= 80V
C
C
C
+ C , C
SHORTED
DS
DS
DS
iss
gs
gd
ds
1400
1200
1000
800
600
400
200
0
= 50V
= 20V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
C
2
rss
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
4
8
12
16
20
24
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
1
2
1.5
1
T
= 150°C
J
°C
T
=
25
J
0.1
0.01
0.5
0
V
= 0V
GS
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
25
50
T
75
100
125
150
V
, Case Temperature (°C)
SD
C
Fig 11. Typical Source-to-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHLG77110, 2N7612M1
240
200
160
120
80
100
I
D
TOP
0.8A
1.1A
1.8A
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
BOTTOM
10
1
1ms
40
Tc = 25°C
Tj = 150°C
10ms
Single Pulse
0.1
0
25
50
75
100
125
150
1
10
100
1000
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. DrainCurrent
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
1
t
1
t
SINGLE PULSE
( THERMAL RESPONSE )
2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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7
IRHLG77110, 2N7612M1
Pre-Irradiation
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
I
AS
0.01
t
Ω
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
4.5V
.2µF
12V
.3µF
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
V
VDS
DS
90%
VGS
VDD
D.U.T.
RG
+
-
10%
VGS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLG77110, 2N7612M1
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
10 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 6.6mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = 1.8A, V
GS
= 10V
L
Å Total Dose Irradiation with V Bias.
Â
I
V
≤ 1.8A, di/dt ≤ 497A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — MO-036AB
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IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2008
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9
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