IRHLYS797034CM [INFINEON]
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA); 抗辐射的逻辑电平功率MOSFET直通孔（低电阻TO- 257AA ）
| 型号： | IRHLYS797034CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| 文件： | 总9页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97292A
2N7625T3
IRHLYS797034CM
60V, P-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHLYS797034CM 100K Rads (Si) 0.074Ω -20A*
IRHLYS793034CM 300K Rads (Si) 0.074Ω -20A*
Low-Ohmic
TO-257AA
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
and post radiation.
This is achieved while
maintaining single event gate rupture and single
event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Complimentary N-Channel Available -
IRHLYS77034CM
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I @V
D
I @V
D
= -4.5V, T = 25°C Continuous Drain Current
-20*
GS
GS
C
= -4.5V, T = 100°C Continuous Drain Current
C
-16.6
-80
A
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±10
GS
E
181
mJ
A
AS
I
-20
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
10.9
-55 to 150
T
J
T
Storage Temperature Range
°C
g
STG
Lead Temperature
Weight
300 (0.063in/1.6mm from case for 10s)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
10/05/10
IRHLYS797034CM, 2N7625T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.06
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.074
Ω
V = -4.5V, I = -16.6AÃ
GS D
DS(on)
V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
-1.0
—
17
—
—
3.8
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
DS
= -10V, I = -16.6A Ã
DS
I
Zero Gate Voltage Drain Current
V
= -48V ,V =0V
DSS
DS
GS
µA
—
V
= -48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
36
14
18
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
Q
Q
Q
V
= -4.5V, I = -20A
g
gs
gd
d(on)
r
GS D
nC
V
= -30V
DS
t
t
t
t
32
V
V
= -30V, I = -20A,
= -5.0V, R = 7.5Ω
DD
GS
D
265
100
85
G
ns
d(off)
f
L
+ L
—
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
nH
S
D
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2249
580
86
—
—
—
V
GS
= 0V, V
= -25V
f = 1.0MHz
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
R
g
Gate Resistance
Ω
20
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-20*
-80
-5.0
100
128
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -20A, V
= 0V Ã
j
S
GS
T = 25°C, I = -20A, di/dt ≤ -100A/µs
j
F
V
≤ -25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLYS797034CM, 2N7625T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-60
-1.0
—
—
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
GS
V
V
-2.0
-100
100
-1.0
= V , I = -250µA
GS(th)
DS
D
I
I
I
V
V
GS
= -10V
= 10V
GSS
GSS
DSS
GS
nA
µA
V
= -48V, V = 0V
GS
DS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.076
Ω
V
GS
= -4.5V, I = -16.6A
D
R
DS(on)
Static Drain-to-Source On-state
Resistance (Low Ohmic TO-257)
—
—
0.074
-5.0
Ω
V
= -4.5V, I = -16.6A
GS
D
V
Diode Forward Voltage
V
V
= 0V, I = -20A
GS
D
SD
1. Part numbers IRHLYS797034, IRHLYS793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
2V
@VGS=
4V
@VGS=
5V
@VGS=
6V
@VGS=
7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-40
-
-
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLYS797034CM, 2N7625T3
Pre-Irradiation
100
10
1
100
VGS
VGS
-10V
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.0V
-2.7V
-2.5V
TOP
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.3V
BOTTOM -2.3V
10
-2.3V
-2.3V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
0.0
I
= -20A
D
T
= 150°C
J
T
= 25°C
J
V
= -25V
DS
60µs PULSE WIDTH
V
= -4.5V
GS
2
2.5
3
3.5
4
4.5
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLYS797034CM, 2N7625T3
160
140
120
100
80
140
130
120
110
100
90
I
= -20A
D
T
T
= 150°C
= 25°C
J
J
T
T
= 150°C
J
J
80
60
70
60
40
= 25°C
50
20
Vgs = -4.5V
40
0
30
2
4
6
8
10
12
0
10 20 30 40 50 60 70 80
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
75
70
65
60
55
2.0
1.5
1.0
0.5
0
I
= -1.0mA
D
I
I
I
I
= -50µA
D
= -250µA
D
= -1.0mA
D
= -150mA
D
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
Fig 8. Typical Threshold Voltage Vs
BreakdownVoltageVsTemperature
Temperature
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5
IRHLYS797034CM, 2N7625T3
Pre-Irradiation
3600
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
= -48V
C
C
C
+ C , C
SHORTED
I = -20A
D
DS
iss
gs
gd
ds
3200
2800
2400
2000
1600
1200
800
= C
VDS = -30V
rss
oss
gd
= C + C
VDS = -12V
ds
gd
C
iss
6
C
oss
4
2
400
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
100
0
10
Q
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Total Gate Charge (nC)
G,
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
30
100
10
1
LIMITED BY PACKAGE
25
20
15
10
5
T
= 150°C
J
T
= 25°C
J
V
= 0V
5
GS
0
0
0
1
-V
2
3
4
6
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHLYS797034CM, 2N7625T3
360
300
240
180
120
60
1000
I
D
OPERATION IN THIS AREA LIMITED
BY R (on)
TOP
-8.9A
-12.6A
BOTTOM -20A
DS
100
10
1
100 s
µ
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
-V
Starting T , Junction Temperature (°C)
DS
J
Fig 14. Maximum Avalanche Energy
Fig 13. Maximum Safe Operating Area
Vs. DrainCurrent
10
1
D = 0.50
0.20
P
DM
t
1
0.10
0.05
t
2
0.1
0.02
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHLYS797034CM, 2N7625T3
Pre-Irradiation
I
L
AS
V
DS
-
+
D.U.T
AS
R
G
V
DD
A
I
DRIVER
V
-
GS
0.01
Ω
t
p
t
p
15V
V
(BR)DSS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
-4.5V
.3µF
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
D.U.T.
10%
RG
-
+
VDD
VGS
90%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLYS797034CM, 2N7625T3
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Ä
Total Dose Irradiation with V
applied and V
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Bias.
= 0 during
GS
-10 volt V
Á V
= -25V, starting T = 25°C, L = 0.9 mH
DD
Peak I = -20A, V
J
= -10V
GS
L
Å
Total Dose Irradiation with V
Bias.
 I
SD
≤ -20A, di/dt ≤ -359A/µs,
DS
= 0 during
-48 volt V
applied and V
V
≤ -60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
DD
J
Case Outline and Dimensions — Low Ohmic TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
CERAMIC EYELETS
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
STANDARD
PIN-OUT
OPTIONAL
PIN-OUT
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C A
B
PIN ASSIGNMENTS
1 = DRAIN
NOT ES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
2 = SOURCE
3 = GATE
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
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9
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