IRHM7C50SESCSPBF [INFINEON]
Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA;型号: | IRHM7C50SESCSPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 晶体 晶体管 功率场效应晶体管 局域网 |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1252B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM2C50SE
IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.60Ω, (SEE) RAD HARD HEXFET
Product Summary
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure.Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
Part Number
IRHM2C50SE
IRHM7C50SE
BVDSS
RDS(on)
ID
600V
0.60Ω
10.4A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Ceramic Eyelets
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRHM2C50SE, IRHM7C50SE Units
I
@ V
= 12V, T = 25°C Continuous Drain Current
10.4
D
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
6.5
41.6
150
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/K ꢀ
V
D
C
1.2
V
GS
±20
E
Single Pulse Avalanche Energy
Avalanche Current
500
mJ
AS
I
10.4
15
A
AR
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
mJ
3.0
V/ns
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
g
STG
300 (0.063 in (1.6 mm) from case for 10 sec)
9.3 (typical)
Weight
To Order
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Pre-Radiation
IRHM2C50SE, IRHM7C50SE Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
600
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.45
V/°C
DSS
J
D
R
Static Drain-to-Source
—
—
—
—
—
—
—
—
0.60
0.65
4.5
—
V
= 12V, I =6.5A
D
DS(on)
GS
V = 12V, I = 10.4A
GS
V
Ω
On-State Resistance
D
V
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
2.5
3.0
—
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 6.5A
DS
DS
I
50
V
= 0.8 x Max Rating,V =0V
DSS
DS GS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
150
30
V
= 20V
GSS
GS
nA
nC
I
V
= -20V
GS
GSS
Q
V
=12V, I = 10.4A
g
GS
V = Max Rating x 0.5
DS
D
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
gs
gd
Q
75
t
55
V
= 300V, I = 10.4A,
DD D
d(on)
t
r
Rise Time
190
210
130
—
R
G
= 2.35Ω
ns
t
Turn-Off Delay Time
d(off)
t
f
L
Fall Time
symbol show-
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Modified MOSFET
ing the internal inductances.
Internal Drain Inductance
D
S
nH
Measured from source lead,
L
Internal Source Inductance
—
8.7
—
6mm (0.25 in) from package
to source bonding pad.
C
C
C
Input Capacitance
—
—
—
2700
300
61
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
ReverseTransfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
10.4
41.6
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
S
A
I
Pulse Source Current (Body Diode)
SM
V
t
Diode ForwardVoltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.62
V
T = 25°C, I = 10.4A,V
= 0V
GS
j
SD
S
1200 ns
16 µC
T = 25°C, I = 10.4A, di/dt ≤ 100A/µs
j
rr
F
V
Q
≤ 30V
DD
RR
t
ForwardTurn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.83
48
thJC
thJA
thCS
K/W ꢀ
0.21
—
Typical socket mount
To Order
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IRHM2C50SE, IRHM7C50SE Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs of the two low dose rate test circuits that are used.
are tested to verify their hardness capability.The hard- Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si) no changes in limits are specified in DC
parameters.
ness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
V
DSS
bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 0.5 X 105 Rads(Si) and 1 x
105 Rads (Si) are identical and are presented in Table
1, column 1, IRHM2C50SE and IRHM7C50SE, re-
spectively. The values in Table 1 will be met for either
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments.Single Event
Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
IRHM2C50SE 50K Rads (Si)
IRHM7C50SE 100K Rads (Si) Units
Parameter
Test Conditions
= 0V, I = 1.0mA
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate ThresholdVoltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
600
2.5
—
—
4.5
V
GS
DSS
D
V
V
GS(th)
V
= V , I = 1.0mA
GS
DS
GS
GS
D
I
100
-100
50
V
= 20V
GSS
nA
I
—
V
= -20V
GSS
I
—
µA
V
=0.8 x Max Rating, V =0V
DSS
DS GS
R
—
0.60
Ω
V = 12V, I =6.5A
GS
D
DS(on)1
On-State Resistance One
V
SD
Diode Forward Voltage
—
1.62
V
T
C
= 25°C, I = 10.4A,V
= 0V
GS
S
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
Min Typ Max Min Typ Max Units
Test Conditions
V
Drain-to-Source Voltage
—
—
480
—
—
480
V
Applied drain-to-source voltage during
gamma-dot
DSS
I
—
—
20
6.4
—
—
—
16
—
—
—
137
6.4
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
2.3 A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
—
1
Table 3. Single Event Effects
LET (Si)
Fluence Range
V
Bias
(V)
V
Bias
GS
(V)
DS
Parameter Typical
Units
Ion
(MeV/mg/cm2) (ions/cm2) (µm)
BV
600
V
Ni
28
1 x 105
~35
480
-5
DSS
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IRHM2C50SE, IRHM7C50SE Devices
Radiation Characteristics
Total Dose Irradiation with V
Bias.
Repetitive Rating; Pulse width limited by maximum
junction temperature. Refer to current HEXFET
reliability report.
GS
= 0 during irradiation per
12 volt V
applied and V
GS
DS
MIL-STD-750, method 1019.
Total Dose Irradiation withV
Bias.
@ V
DD
= 50V, Starting T = 25°C,
DS
(pre-radiation) applied and
J
V
DS
V
GS
= 0.8 rated BV
DSS
= 0 during irradiation per MlL-STD-750, method 1019.
E
= [0.5
L
(
)
[BV
* DSS
/(BV
-V )]
DSS DD
AS
*
*
Peak I = 10.4A, V
= 12V, 25 ≤ R ≤ 200Ω
L
GS
G
This test is performed using a flash x-ray source operated
in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test conditions are
identical to facilitate direct comparison for circuit applications.
I
SD
≤ 10.4A, di/dt ≤ 130A/µs,
V
≤ BV , T ≤ 150°C
DD
DSS
J
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ꢀK/W = °C/W
W/K = W/°C
Case Outline and Dimensions —TO-254AA
3
2
1
Conforms to JEDEC OutlineTO-254AA
Legend: 1 Drain
2 Source
3 Gate
Notes: 1. Dimensioning and tolerancing
per ANSIY14.5M-1982
2. All dimensions are shown in millimeters
(inches).
3. Optional leadforms available in either
orientation
Optional Leadforms for OutlineTO-254AA
CAUTION
BERYLLIAWARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which will
produce beryllia or beryllium dust. Furthermore, beryllium oxides
packages shall not be placed in acids that will produce fumes
containing beryllium.
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http://www.irf.com/
Data and specifications subject to change without notice.
5/96
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