IRHM9130 [INFINEON]
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL; 抗辐射功率MOSFET / 100V ， P- CHANNEL
| 型号： | IRHM9130 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL |
| 文件： | 总8页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90888C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9130
100V, P-CHANNEL
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHM9130
100K Rads (Si)
300K Rads (Si)
0.3Ω
0.3Ω
-11A
-11A
IRHM93130
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
LowTotal Gate Charge
ProtonTolerant
SimpleDriveRequirements
EaseofParalleling
Hermetically Sealed
Ceramic Package
LightWeight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-11
-7.0
-44
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
190
mJ
A
AS
I
-11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-10
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
For footnotes refer to the last page
www.irf.com
1
02/18/03
IRHM9130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-100
—
—
—
—
V
V
= 0V, I =-1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.1
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.3
0.325
-4.0
—
V
= -12V, I = -7.0A➀
GS D
DS(on)
Ω
V
= -12V, I = -11A➀
GS
DS
DS
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
2.5
—
V
V
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
>-15V, I
= -7.0A ➀
DS
I
-25
V = -80V ,V =0V
DS GS
DSS
µA
—
-250
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
V
= -20V
GSS
GS
nA
nC
I
V
= 20V
GSS
GS
Q
Q
Q
V
=-12V, I = -11A
GS D
g
gs
gd
d(on)
r
10
V
DS
= -50V
25
t
t
t
t
30
V
DD
V
= -50V, I = -11A,
D
50
=-12V, R = 7.5Ω
GS G
ns
Turn-Off Delay Time
FallTime
Total Inductance
70
d(off)
70
—
f
L
+ L
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S
D
nH
C
C
C
Input Capacitance
—
—
—
1200
300
74
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
-11
-44
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
250
V
T = 25°C, I = -11A, V
= 0V ➀
j
SD
S
GS
nS
T = 25°C, I = -11A, di/dt ≤ -100A/µs
j
rr
F
Q
0.84 µC
V
≤ -50V ➀
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
1.67
—
°C/W
Junction-to-Ambient
30
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHM9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
-2.0
—
—
-4.0
-100
100
-25
-100
-2.0
—
—
-5.0
-100
100
-25
V
= 0V, I = -1.0mA
GS D
DSS
V
V
V
= V , I = -1.0mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
V
GS
GSS
I
—
—
µA
V
=-80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
➀
—
0.3
—
0.3
Ω
V
= -12V, I =-7.0A
D
GS
GS
DS(on)
R
DS(on)
➀
—
—
0.3
—
—
0.3
Ω
V
= -12V, I =-7.0A
D
V
SD
➀
-3.0
- 3.0
V
V
= 0V, I = -11A
GS S
1. Part number IRHM9130
2. Part number IRHM93130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V
-100
@VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
28
285
305
345
43
39
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
59.9
-100
32.8
-60
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9130
Pre-Irradiation
100
100
10
1
VGS
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
2.5
100
-11A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
10
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10 11 12
13
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig3. TypicalTransferCharacteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHM9130
20
16
12
8
2000
I
D
= -11A
V
= 0V,
f = 1MHz
C
GS
-
= 80V
V
V
V
DS
DS
DS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
-
= 50V
C
= C
gd
rss
-
= 20V
C
= C + C
1600
1200
800
400
0
oss ds
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
10
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig6. TypicalGateChargeVs.
Fig5. TypicalCapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
°
T = 25 C
J
100us
1ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
10ms
100
GS
4.0
0.1
0.0
1
1.0
2.0
3.0
5.0
1
10
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig8. MaximumSafeOperatingArea
Fig7. TypicalSource-DrainDiode
ForwardVoltage
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5
IRHM9130
Pre-Irradiation
RD
12
10
8
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig10a. SwitchingTimeTestCircuit
2
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
DS
Fig9. MaximumDrainCurrentVs.
CaseTemperature
Fig10b. SwitchingTimeWaveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM9130
L
V
D S
400
300
200
100
0
I
D
TOP
-4.9A
-7.0A
BOTTOM -11A
D .U .T
R
G
V
D D
A
I
A S
D R IV E R
-VGS
0.01
Ω
t
p
15V
Fig12a. UnclampedInductiveTestCircuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig12c. MaximumAvalancheEnergy
Vs.DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
Fig13a. BasicGateChargeWaveform
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7
IRHM9130
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -25V, starting T = 25°C, L=3.1mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -11A, V
=-12V
L
GS
➀ I
V
≤ -11A, di/dt ≤ -480A/µs,
➀ Total Dose Irradiation with V Bias.
SD
DS
= 0 during
≤ -100V, T ≤ 150°C
-80 volt V
applied and V
DS GS
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
B
22.73 [.895]
21.21 [.835]
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES :
PIN ASSIGNMENTS
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLINGDIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TOJEDECOUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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