IRHM9150 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA); 抗辐射功率MOSFET直通孔( TO- 254AA )型号: | IRHM9150 |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
文件: | 总8页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 90889D
IRHM9150
JANSR2N7422
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7422
JANSF2N7422
IRHM9150
100K Rads (Si) 0.080Ω
300K Rads (Si) 0.080Ω
-22A
-22A
IRHM93150
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
LowTotal Gate Charge
ProtonTolerant
SimpleDriveRequirements
EaseofParalleling
Hermetically Sealed
Surface Mount
Ceramic Package
LightWeight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-22
-14
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
-88
DM
@ T = 25°C
P
D
150
W
W/°C
V
C
1.2
V
GS
Gate-to-SourceVoltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
AR
dv/dt
-23
V/ns
T
-55 to 150
J
oC
g
T
STG
StorageTemperature Range
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
For footnotes refer to the last page
www.irf.com
1
2/18/03
IRHM9150
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-100
—
—
—
—
V
V
= 0V, I =-1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.093
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.080
0.085
-4.0
—
V
= -12V, I = -14A➀
DS(on)
GS D
Ω
V
= -12V, I = -22A➀
D
GS
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
11
—
V
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
>-15V, I
= -14A ➀
DS
DS
I
-25
V
= -80V ,V =0V
DS GS
DSS
µA
—
-250
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
200
35
V
= -20V
GSS
GS
nA
nC
I
V
= 20V
GSS
GS
Q
Q
V
=-12V, I = -22A
GS D
g
gs
V
DS
= -50V
Q
48
gd
t
40
V
= -50V, I = -22A,
d(on)
DD
GS
D
t
t
t
170
190
190
—
V
=-12V, R = 2.35Ω
r
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
f
L
+ L
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S
D
nH
C
Input Capacitance
—
—
—
4300
1100
310
—
—
—
V
= 0V,V
= -25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
Reverse Transfer Capacitance
pF
oss
C
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
-22
-88
S
A
I
Pulse Source Current (Body Diode) ➀
SM
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
300
1.5
V
T = 25°C, I = -22A, V
= 0V ➀
j
SD
S
GS
t
nS
µC
T = 25°C, I = -22A, di/dt ≤ -100A/µs
j
rr
F
Q
V
≤ -50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
R
thCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.21
0.83
48
—
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM9150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Min
Drain-to-Source Breakdown Voltage -100
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
-100
-2.0
—
—
V = 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
-2.0
—
-4.0
-100
100
-25
-5.0
-100
100
-25
V
= V , I = -1.0mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
GS
nA
I
—
—
V
GSS
I
—
—
µA
V
=-80V, V =0V
GS
= -12V, I =-14A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
➀
—
0.080
—
0.080
Ω
V
V
R
DS(on)
➀
—
—
0.080
-3.0
—
0.080
-3.0
Ω
= -12V, I =-14A
D
GS
V
SD
➀
—
V
V
= 0V, I = -22A
GS S
1. Part number IRHM9150 (JANSR2N7422)
2. Part number IRHM93150 (JANSF2N7422)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V
-100
@VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
28
285
305
345
43
39
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
59.9
-100
32.8
-60
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9150
Pre-Irradiation
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
10
-5.0V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
T = 25 C
J
J
10
10
1
10
100
1
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
3.0
100
-22A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
V
= -12V
20µs PULSE WIDTH
GS
10
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig3. TypicalTransferCharacteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHM9150
7000
6000
5000
4000
3000
2000
1000
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= -22A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-80V
=-50V
=-20V
C
= C
gd
DS
DS
DS
rss
C
= C + C
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
40
80
120
160
200
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig6. TypicalGateChargeVs.
Fig5. TypicalCapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
100us
J
1ms
°
T = 25 C
J
10ms
°
= 25 C
°
= 150 C
T
C
T
J
V
= 0 V
Single Pulse
GS
1
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig8. MaximumSafeOperatingArea
Fig7. TypicalSource-DrainDiode
ForwardVoltage
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5
IRHM9150
Pre-Irradiation
RD
24
20
16
12
8
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig10a. SwitchingTimeTestCircuit
t
t
r
t
t
f
4
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
V
DS
Fig9. MaximumDrainCurrentVs.
CaseTemperature
Fig10b. SwitchingTimeWaveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
0.001
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHM9150
L
V
D S
1200
1000
800
600
400
200
0
I
D
TOP
-9.8A
D .U .T
R
G
-14A
BOTTOM -22A
V
D D
A
I
A S
D R IV E R
-
VGS
0.01
Ω
t
p
15V
Fig12a. UnclampedInductiveTestCircuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig12c. MaximumAvalancheEnergy
Vs.DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
Fig13a. BasicGateChargeWaveform
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7
IRHM9150
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
➀ V
= -25V, starting T = 25°C, L=2.1mH
-12 volt V
applied and V
DD
Peak I = -22A, V
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
=-12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
V
≤ -22A, di/dt ≤ -450A/µs,
SD
DS
= 0 during
-80 volt V
applied and V
≤ -100V, T ≤ 150°C
DS
GS
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
13.84 [.545]
13.59 [.535]
B
22.73 [.895]
21.21 [.835]
B
13.84 [.545]
13.59 [.535]
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES :
PIN ASSIGNMENTS
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLINGDIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TOJEDECOUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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