IRHM9064U [INFINEON]

Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN;


型号：	IRHM9064U
厂家：	Infineon
描述：	Power Field-Effect Transistor, 35A I(D), 60V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总4页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1438

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM9064

P-CHANNEL

RAD HARD

-60 Volt, 0.060Ω, RAD HARD HEXFET

Product Summary

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Under identical pre- and post-radia-

tion test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in gate drive

circuitry is required. These devices are also capable of sur-

viving transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few micro-

seconds. Single Event Effect (SEE) testing of International

Rectifier P-Channel RAD HARD HEXFETs has demon-

strated virtual immunity to SEE failure. Since the P-Chan-

nel RAD HARD process utilizes International Rectifier’s

patented HEXFET technology, the user can expect the high-

est quality and reliability in the industry.

Part Number

BVDSS

RDS(on)

IRHM9064

-60V

0.060Ω

-35*A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

IdenticalPre-andPost-ElectricalTestConditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

SimpleDriveRequirements

Ease of Paralleling

HermeticallySealed

Electrically Isolated

P-Channel RAD HARD HEXFET transistors also feature

all of the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paralleling

and temperature stability of the electrical parameters.They

are well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifi-

ers and high-energy pulse circuits in space and weapons

environments.

CeramicEyelets

Pre-Radiation

Absolute Maximum Ratings

Parameter

= -12V, T = 25°C Continuous Drain Current

IRHM9064

-35*

Units

@ V

= -12V, T = 100°C Continuous Drain Current

-26

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-168

250

@ T = 25°C

W/K ꢀ

2.0

± 20

Single Pulse Avalanche Energy

Avalanche Current

500

-35*

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

-5.5

V/ns

-55 to 150

Storage Temperature Range

STG

^oC

300 (0.063 in. (1.6mm) from case for 10s

9.3 (typical)

Lead Temperature

Weight

To Order

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IRHM9064

Pre-Radiation

Electrical Characteristics@Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-60

—

=0 V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.048

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.060

0.070

-4.0

—

= -12V, I = -26A

DS(on)

Ω

= -12V, I = -35A

-2.0

—

= V , I = -1.0mA

GS(th)

Ω

S ( )

> -15V, I

= -26 A

-25

= 0.8 x Max Rating,V =0V

DSS

µA

—

-250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

-100

100

260

=-20 V

= 20V

GSS

=-12V, I = -35A

GS D

V = Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

= -30V, I = -35A,

DD D

d(on)

Rise Time

227

200

115

—

= 2.35Ω

Turn-Off Delay Time

d(off)

Fall Time

symbolshow-

Measured from drain lead,

6mm (0.25 in) from package

to center of die.

ModifiedMOSFET

ing the internal inductances.

Internal Drain Inductance

Measured from source lead,

Internal Source Inductance

—

8.7

—

6mm (0.25 in) from package

to source bonding pad.

iss

oss

rss

Input Capacitance

—

7400

3200

540

—

= 0V, V

= -25 V

f = 1.0MHz

GS DS

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

-35

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Pulse Source Current (Body Diode)

-168

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-3.0

480

3.7

T = 25°C, I = -35A, V

= 0V

T = 25°C, I = -35A, di/dt ≤ -100A/µs

µC

≤ -50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Junction-to-Sink

—

0.50

thJC

thJA

thCS

K/W ꢀ

0.21

—

Typical socket mount

To Order

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IRHM9064

Radiation Characteristics

circuits that are used. Both pre- and post-radiation

performance are tested and specified using the same

drive circuitry and test conditions in order to provide

a direct comparison. It should be noted that at a ra-

diation level of 1 x 10⁵Rads (Si) no changes in limits

are specified in DC parameters.

Radiation Performance of P-Channel Rad

Hard HEXFETs

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability.The hard-

ness assurance program at International Rectifier

uses two radiation environments.

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of -12 volts per note 6 and a

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as

stated in MIL-PRF-19500 Group D. International

Rectifier radiation hardened P-Channel HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments and the results are shown

in Table 3.

DSS

bias condition equal to 80% of the devicerated

voltage per note 7. Pre- and post-radiation limits of

the devices irradiated to 1 x 10⁵Rads (Si) are identi-

cal and are presented in Table 1. The values in Table

1 will be met for either of the two low dose rate test

Table 1. Low Dose Rate

IRHM9064

Parameter

100K Rads (Si) Units

Test Conditions

= 0V, I = -1.0mA

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

-200

-2.0

—

-4.0

-100

100

-25

DSS

GS(th)

= V , I = -1.0mA

= -20V

GSS

—

= 20V

GSS

—

µA

=0.8 x Max Rating, V =0V

DS GS

DSS

—

0.060

Ω

= -12V, I = -26A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

-3.0

= 25°C, I = -35A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Min Typ Max Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Voltage

—

-48

—

-48

Applied drain-to-source voltage during

gamma-dot

—

0.1

-100

-800

—

0.8

-100

-160

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

—

Table 3. Single Event Effects

LET (Si)

Fluence Range

Bias

(V)

Bias

(V)

Parameter Typical

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

-60

1 x 10⁵

~41

-60

DSS

To Order

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IRHM9064

Pre-Radiation

Total Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

-12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

Total Dose Irradiation withV

Bias.

@ V

= -25V, Starting T = 25°C,

(pre-radiation)

= [0.5

= 0.8 rated BV

L (I ) [BV

* L * DSS

/(BV

-V )]

DSS DD

applied and V

DSS

= 0 during irradiation per

Peak I = -35A, V

= -12 V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

≤ -35A, di/dt ≤−170 A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS J

Suggested RG = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

* Current is limited by Pin diameter

Case Outline and Dimensions —

.12 ( .005 )

-B-

13.84

13.59

(

.545 )

.535 )

6.60 ( .260 )

6.32 ( .249 )

3 .78 ( .1 49

3 .53 ( .1 39

)

.12 ( .005 )

13.84 ( .545 )

13.59 ( .535 )

-B-

1 .27 ( .0 50

1 .02 ( .0 40

)

- A-

3.78 ( .149 )

3.53 ( .139 )

6.60 ( .260 )

6.32 ( .249 )

1.27 ( .050 )

1.02 ( .040 )

-A-

20.32 ( .800

20.07 ( .790

)

1 7 .40 ( .6 85

1 6 .89 ( .6 65

)

13.84 ( .545 )

13.59 ( .535 )

21.98 ( .865 )

20.95 ( .825 )

20.32 ( .800

20.07 ( .790

)

1.52 ( .060 ) R

M IN.

17.40

16.89

(

.685

.665

)

13.84 ( .545 )

13.59 ( .535 )

LEGEND

1 - COLLECTOR

-C-

31.40 ( 1.235 )

30.39 ( 1.199 )

2 - EMITTER

3 - GATE

3.2

3.1

-C-

1 .14 ( .0 45

0 .89 ( .0 35

)

4.83 ( .190

3.81 ( .150

)

4.01

3.61

(

.158 )

.142 )

3.81 ( .150

)

.50 ( .020 )

.25 ( .010 )

A M B

1 .14 ( .0 45 )

0 .89 ( .0 35 )

NOTES

1. DIMENSIONING

2. ALL DIM ENSIONS ARE SHOW N IN MILLIMETERS

3. LEADFORM IS AVAILABLE IN EITHER ORIENTATION :

3.1 EXAM PLE : IRFM4500

3.2 EXAM PLE : IRFM450U

3.81 ( .150 )

LEGEND

TOLERANCING PER ANSI Y14.5M-1982.

INCHES ).

3 .81 ( .1 50 )

1 - COLLECTOR

2 - EM ITTER

3 - GATE

(

.50

.25

(

.020 )

.010 )

A M B

NOTES:

1. DIMENSIONING

2. ALL DIM ENSIONS ARE SHOW N IN MILLIMETERS

TOLERANCING PER ANSI Y14.5M, 1982.

INCHES ).

(

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and ( Inches )

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblashted,

machined, or have other operations perfomed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

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http://www.irf.com/

Data and specifications subject to change without notice.

6/96

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IRHM9064U [INFINEON]

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