IRHM9160 [INFINEON]

TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A); 晶体管P沟道（ BVDSS = -100V ， RDS（ON） = 0.087ohm ，ID = -35 * A）


型号：	IRHM9160
厂家：	Infineon
描述：	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35A) 晶体管P沟道（ BVDSS = -100V ， RDS（ON） = 0.087ohm ，ID = -35 A）晶体晶体管
文件：	总4页 (文件大小：95K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Previous Datasheet

Index

Next Data Sheet

Provisional Data Sheet No. PD-9.1415

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM9160

P-CHANNEL

RAD HARD

-100 Volt, 0.087Ω, RAD HARD HEXFET

Product Summary

International Rectifier’s P-channel RAD HARD tech-

nology HEXFETs demonstrate excellent threshold

voltage stability and breakdown voltage stability at

total radiation doses as high as 10⁵Rads (Si). Under

Part Number

BVDSS

RDS(on)

IRHM9160

-100V

0.087 Ω -35*A

identical pre- and post-radiation test conditions, In- Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Electrically Isolated

ternational Rectifier’s P-channelRAD HARD HEXFETs

retain identical electrical specifications up to 1 x 10⁵

Rads (Si) total dose. No compensation in gate drive

circuitry is required. These devices are also capable

of surviving transient ionization pulses as high as 1 x

10¹²Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect, (SEE),

testing of International Rectifier’s P-channel RAD

HARD HEXFETs has demonstrated virtual immunity

to SEE failure. Since the P-channel RAD HARD pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

P-channel RAD HARD HEXFET transistors also fea-

ture all of the well-established advantages of MOS-

FETs, such as voltage control, very fast switching, ease

of paralleling and temperature stability of the electri-

cal parameters.

■ Ceramic Eyelets

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Pre-Radiation

Absolute Maximum Ratings

Parameter

= -12V, T = 25°C Continuous Drain Current

IRHM9160

-35*

Units

@ V

= -12V, T = 100°C Continuous Drain Current

-22

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

-140

250

@ T = 25°C

W/K ➄

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

-35

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

-5.5

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

^oC

(0.063 in. (1.6mm) from

case for 10 sec.)

9.3 (typical)

300

Weight

Notes: See Page 4.

To Order

*I current limited by pin diameter

Previous Datasheet

Index

Next Data Sheet

IRHM9160 Device

Pre-Radiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0 mA

DSS

V/°C Reference to 25°C, I = -1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.13

DSS

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

-2.0

—

0.087

0.10

-4.0

—

-25

-250

= 12V, I = -22A

= 12V, I = -35A

DS(on)

GS D

➃

Ω

S ( )

GS D

= V , I = -1.0 mA

GS(th)

Ω

> 15V, I

= -22A ➃

= 0.8 x Max Rating,V = 0V

DSS

µA

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

8.7

-100

100

200

240

220

150

—

= -20V

= +20V

GSS

=12V, I = -35A

GS D

V = Max. Rating x 0.5

= -50V, I = -35A,

d(on)

DD D

R = 2.35Ω

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

7000

2000

500

—

= 0V, V

= -25V

f = 1.0 MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

-35

-140

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

-3.3

775

5.0

µC

T = 25°C, I = -35A, V

= 0V ➃

T = 25°C, I = -35A, di/dt ≤ -100A/µs

≤ -50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

0.50

thJC

thJA

K/W➄

Junction-to-Ambient

—

To Order

Previous Datasheet

Index

Next Data Sheet

IRHM9160 Device

Radiation Characteristics

Radiation Performance of P-Channel

Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 10⁵

Rads (Si), no change in limits are specified in DC

parameters.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of -12 volts per note 6 and a

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 10¹²Rads

(Si)/Sec.

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 10⁵Rads (Si)

are identical and are presented in Table 1. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used.

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as

stated in MIL-PRF-19500 Group D. International

Rectifier P-Channel radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environment and results are shown in

Table 3.

Table 1. Low Dose Rate ➅ ➆

IRHM9160

100K Rads (Si)

Parameter

Units

Test Conditions ➉

min.

max.

Drain-to-Source Breakdown Voltage -100

—

= 0V, I = -1.0 mA

DSS

GS D

Gate Threshold Voltage ➃

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source ➃

-2.0 -4.0

= V , I = -1.0 mA

GS(th)

—

-100

100

= -20V

GSS

= 20V

GSS

-25

µA

= 0.8 x Max Rating, V

= 0V

DSS

0.087

Ω

V = -12V, I = -22A

DS(on)1

On-State Resistance One

Diode Forward Voltage ➃

—

-3.3

= 25°C, I = -35A,V

= 0V

Table 2. High Dose Rate ➇

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Drain-to-Source Voltage

Min. Typ Max. Min. Typ. Max. Units

Test Conditions

Applied drain-to-source voltage

DSS

—

-80

—

-80

during gamma-dot

—

0.1

-100

-800

—

0.5

-100

-160

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects ➈

LET (Si)

Fluence Range

Bias

(V)

-100

Bias

(V)

Parameter

Typ.

-100

Units

Ion

(MeV/mg/cm²) (ions/cm²) (µm)

1 x 10⁵

~41

DSS

To Order

Previous Datasheet

Index

Next Data Sheet

IRHM9160 Device

Radiation Characteristics

➅ Total Dose Irradiation with V

Bias.

= 0 during

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

-12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

➆ Total Dose Irradiation with V Bias.

➁ @ V

= -25V, Starting T = 25°C,

(pre-radiation)

= [0.5

= 0.8 rated BV

(I ) [BV

/(BV

DSS

-V )]

applied and V

DSS

= 0 during irradiation per

DSS DD

Peak I = -35A, V

= -12V, 25 ≤ R ≤ 200Ω

MlL-STD-750, method 1019.

➂ I

≤ -35A, di/dt ≤ 170 A/µs,

➇ This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV , T ≤ 150°C

DSS

Suggested RG = 2.35Ω

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➈ Process characterized by independent laboratory.

➄ K/W = °C/W

➉ All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions

Optional leadforms for outline TO-254

Legend

1 - Drain

2 - Source

3 - Gate

Notes:

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. All dimensions are shown in millimeters (inches).

3. Leadform is available in either orientation:

Example: 3.1 IRHM7160D

3.2 IRHM7160U

1. Dimensioning and Tolerancing per ANSI Y14.5M-1982

2. All dimensions are shown in millimeters (inches).

Conforms to JEDEC Outline TO-254AA

Dimensions in Millimeters and (Inches)

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which

will produce beryllia or beryllium dust. Furthermore, beryllium

oxides packages shall not be placed in acids that will produce

fumes containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

To Order

IRHM9160 [INFINEON]

相关型号：

IRHM9230

IRHM9230D

IRHM9230DPBF

IRHM9230U

IRHM9230UPBF

IRHM9250

IRHM9250DPBF

IRHM9250SCSPBF

IRHM9250U

IRHM9260

IRHM93064

IRHM93064U