IRHNA7264SE [INFINEON]
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A); 晶体管N沟道（ BVDSS = 250V ， RDS（ON） = 0.110ohm ，ID = 34A ）
| 型号： | IRHNA7264SE |
| 厂家： | 
Infineon |
| 描述： | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A) |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.1432A
REPETITIVEAVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHNA7264SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
250Volt, 0.110Ω, (SEE) RAD HARD HEXFET
Part Number
BVDSS
RDS(on)
ID
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RADHARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. No compensation in gate drive cir-
cuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes In-
ternational Rectifier’s patented HEXFETtechnology, the
user can expect the highest quality and reliability in the
industry.
IRHNA7264SE
250V
0.110Ω
34A
Features:
■ Radiation Hardened up to 1 x 105 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ NeutronTolerant
■ Identical Pre- and Post-ElectricalTest Conditions
■ RepetitiveAvalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
■ Surface Mount
■ Lightweight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulsecircuits in space
and weapons environments.
Product Summary
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRHNA7264SE
Units
I
D
@ V
@ V
= 12V, T = 25oC Continuous Drain Current
34
GS C
A
I
D
= 12V, T = 100oC Continuous Drain Current
C
21
GS
I
Pulsed Drain Current➀
Max. Power Dissipation
136
DM
@ T = 25oC
P
D
300
W
W/K➄
V
C
Linear Derating Factor
2.4
V
Gate-to-Source Voltage
±20
500
GS
E
Single PulseAvalanche Energy ➁
Avalanche Current➀
mJ
AS
I
34
A
AR
E
RepetitiveAvalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
30
mJ
AR
dv/dt
4.0
V/ns
T
-55 to 150
J
oC
g
T
STG
StorageTemperature Range
(for 5 sec.)
Package Mounting SurfaceTemperature
Weight
300
3.3 (typical)
To Order
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IRHNA7264SE Device
Pre-Radiation
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
—
—
—
V
V/oC
V
= 0V, I = 1.0 mA
D
DSS
GS
Reference to 25°C, I = 1.0 mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
DSS
J
D
R
Static Drain-to-Source
On-State Resistance
GateThreshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
2.5
4
—
—
—
—
—
—
—
—
0.110
0.123
4.5
—
50
V
= 12V, I =24A
D
DS(on)
GS
➃
Ω
V
S ( )
V
= 12V, I = 34A
GS
D
V
g
V
V
= V , I = 1.0 mA
GS(th)
fs
DS
DS
GS
D
Ω
> 15V, I
= 21A ➃
DS
I
V
= 0.8 x Max Rating,V
V
DS
= 0V
DSS
DS
GS
= 0.8 x Max Rating
µA
250
V
= 0V, T = 125°C
J
GS
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On DelayTime
RiseTime
Turn-Off DelayTime
FallTime
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
185
55
180
35
200
140
75
V
= 20V
GSS
GS
nA
nC
I
V
= -20V
GS
GSS
Q
Q
Q
V
=12V, I = 34A
g
gs
gd
GS D
V
= Max. Rating x 0.5
DS
t
V
= 125V, I =34A,
d(on)
DD D
t
R = 2.35Ω
G
r
ns
t
d(off)
t
L
f
D
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
—
nH
pF
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
L
Internal Source Inductance
—
6.5
—
S
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
7800
1250
550
—
—
—
V
= 0V, V
DS
f = 1.0 MHz
= 25V
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)➀
—
—
—
—
34
136
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse RecoveryTime
Reverse Recovery Charge
—
—
—
—
—
—
1.4
875
12
V
ns
µC
T = 25°C, I = 34A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 34A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
ForwardTurn-OnTime
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
0.42
thJC
K/W ➄
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
thJ-PCB
To Order
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IRHNA7264SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105 Rads
(Si), no change in limits are specified in DC param-
eters.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a stan-
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 1012 Rads (Si)/
Sec.
dard gate voltage of 12 volts per note 6 and a V
DSS
bias condition equal to 80% of the device rated volt-
age per note 7. Pre- and post-radiation limits of the de-
vices irradiated to 1 x 105 Rads (Si) are identical and
are presented in Table 1. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown inTable 3.
Table 1. Low Dose Rate ➅ ➆
IRHNA7264SE
100K Rads (Si)
Parameter
Units
V
Test Conditions ➉
min.
max.
BV
V
Drain-to-Source Breakdown Voltage
GateThreshold Voltage ➃
250
2.0
—
—
4.5
100
-100
50
V
= 0V, I = 1.0 mA
D
DSS
GS
V
= V , I = 1.0 mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
V
= 20V
GSS
GS
GS
nA
I
—
V
= -20V
GSS
I
—
µA
V
= 0.8 x Max Rating, V = 0V
GS
DSS
DS
T
R
—
0.110
Ω
V = 12V, I =21A
GS
D
DS(on)1
On-State Resistance One
V
Diode Forward Voltage ➃
—
1.4
V
= 25oC, I = 34A,V
S
= 0V
GS
SD
C
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Parameter
Test Conditions
Applied drain-to-source voltage
V
DSS
Drain-to-Source Voltage
—
—
200
—
—
200
V
during gamma-dot
I
—
—
—
10
16
1
—
—
—
—
—
—
10
2.3
20
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
A/µsec Rate of rise of photo-current
µH
L
Circuit inductance required to limit di/dt
1
Table 3. Single Event Effects ➈
LET (Si)
Fluence
Range
V
Bias
(V)
200
V
Bias
GS
(V)
-5
DS
Parameter
Typ.
250
Units
V
Ion
Ni
(MeV/mg/cm2) (ions/cm2) (µm)
BV
28
1 x 105
~35
DSS
To Order
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IRHNA7264SE Devices
Radiation Characteristics
➅ Total Dose Irradiation with V
GS
irradiation per MIL-STD-750, method 1019.
Bias.
= 0 during
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
12 volt V
applied and V
DS
Refer to current HEXFET reliability report.
➁ @ V
= 50V, Starting T = 25oC,
➆ Total Dose Irradiation with V Bias.
DS
(pre-radiation)
DD
= [0.5
J
V
= 0.8 rated BV
DS
DSS
E
L
(
) [BV
* DSS
/(BV
-V )]
DSS DD
AS
*
*
applied and V
= 0 during irradiation per
GS
MlL-STD-750, method 1019.
Peak I = 34A, V
= 12V, 25 ≤ R ≤ 200Ω
L
GS
G
➂ I
SD
≤ 34A, di/dt ≤ 170 A/µs,
≤ BV
, T ≤ 150oC
➇ This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
DD
DSS
J
Suggested RG = 2.35Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➈ Process characterized by independent laboratory.
➄ K/W = oC/W
➉ All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
W/K = W/oC
Case Outline and Dimensions — SMD-2
LEAD ASSIGNMENTS
1
2
3
=
=
=
DRAIN
GATE
SOURCE
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2. CONTROLLING DIMENSION: INCH
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4 DIMENSION INCLUDES METALLIZATION FLASH
5 DIMENSION DOES NOT INCLUDE METALLIZATION FLASH
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Data and specifications subject to change without notice.
5/96
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