IRHNJ67234 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5); 抗辐射功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRHNJ67234 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) |
| 文件： | 总8页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97197
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67234
250V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHNJ67234
IRHNJ63234
Radiation Level RDS(on)
100K Rads (Si) 0.21Ω 12.4A
300K Rads (Si) 0.21Ω 12.4A
ID
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
very low R
and faster switching times reduces
DS(on)
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
12.4
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
7.8
49.6
75
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
56
mJ
A
AS
I
12.4
7.5
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
5.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/08/06
IRHNJ67234
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
250
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.24
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.21
Ω
V
= 12V, I = 7.8A
GS D
Ã
DS(on)
2.0
8.8
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
V
= 15V, I
= 7.8A Ã
DS
DS
I
V
DS
= 200V ,V =0V
GS
DSS
µA
—
V
= 200V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
40
14
11
18
31
38
27
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= 12V, I = 12.4A
V
g
gs
gd
d(on)
r
GS
D
= 125V
DS
t
t
t
t
V
DD
= 125V, I = 12.4A,
= 12V, R = 7.5Ω
GS G
D
V
ns
d(off)
f
L
+ L
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1445
187
2.4
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
1.2
Ω
f = 1.0MHz, open drain
g
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
12.4
49.6
1.2
654
5.15 µC
S
SM
SD
rr
A
V
ns
T = 25°C, I = 12.4A, V
= 0V Ã
j
S
GS
T = 25°C, I = 12.4A, di/dt ≤ 100A/µs
j
F
V
≤ 50V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ67234
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
250
2.0
—
—
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
I
V
GS
= 20V
GSS
GSS
DSS
nA
µA
V
GS
= -20V
V
= 200V, V = 0V
DS GS
R
DS(on)
On-State Resistance (TO-3)
—
—
0.21
1.2
Ω
V
= 12V, I = 7.8A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = 12.4A
D
GS
Part numbers IRHNJ67234 and IRHNJ63234
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS =
0V
@VGS =
-5V
@VGS =
@VGS =
-15V
@VGS =
-17V
@VGS =
-20V
-10V
Ag
Xe
Au
43
59
90
1217
823
112
66
250
250
75
250
250
75
250
250
-
250
50
-
100
50
-
-
-
1480
80
-
300
250
200
150
100
50
Ag
Xe
Au
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ67234
Pre-Irradiation
100
100
10
1
VGS
15V
12V
VGS
15V
TOP
TOP
12V
10V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
60µs PULSE WIDTH
Tj = 25°C
µ
60 s PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
2.0
1.5
1.0
0.5
0.0
I
= 12.4A
D
T = 150°C
J
T
= 25°C
J
10
V
= 50V
DS
60µs PULSE WIDTH
V
= 12V
GS
1
5
5.5
V
6
6.5
7
7.5
8
8.5
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ67234
2800
20
16
12
8
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= 200V
I
= 12.4A
DS
DS
DS
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
2400
2000
1600
1200
800
400
0
= 125V
= 50V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
8
16
24
32
40
48
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
OPERATION IN THIS AREA LIMITED BY R (on)
DS
T
= 150°C
J
T
= 25°C
J
1
100µs
1ms
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
GS
0.1
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
5
IRHNJ67234
Pre-Irradiation
RD
14
12
10
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
V
DS
2
90%
0
25
50
75
100
125
150
T
, Case Temperature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
t
1
SINGLE PULSE
0.05
0.02
t
( THERMAL RESPONSE )
2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNJ67234
100
80
60
40
20
0
I
D
15V
TOP
5.5A
7.8A
BOTTOM 12.4A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
Starting T , Junction Temperature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHNJ67234
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 50V, starting T = 25°C, L= 0.73 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 12.4A, V
= 12V
L
GS
Å
Total Dose Irradiation with V
Bias.
Â
I
SD
DD
≤ 12.4A, di/dt ≤ 660A/µs,
≤ 250V, T ≤ 150°C
J
DS
= 0 during
200 volt V
applied and V
V
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
www.irf.com
相关型号：
IRHNJ67234B
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed
INFINEON
IRHNJ67234SCS
Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRHNJ7130PBF
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
INFINEON
IRHNJ7330SEPBF
Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
INFINEON
IRHNJ7330SESCS
Power Field-Effect Transistor, 5.3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明