IRHQ567110P [INFINEON]
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28); 抗辐射100V ，组合2N -2P沟道功率MOSFET表面贴装（ LCC -28 ）
| 型号： | IRHQ567110P |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) |
| 文件： | 总14页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94057B
IRHQ567110
100V, Combination 2N-2P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-28)
R
5
Product Summary
Part Number Radiation Level RDS(on)
IRHQ567110 100K Rads (Si) 0.27Ω
IRHQ563110 300K Rads (Si) 0.29Ω
ID
CHANNEL
4.6A
4.6A
-2.8A
-2.8A
N
N
P
P
IRHQ567110 100K Rads (Si)
IRHQ563110 300K Rads (Si)
0.96Ω
0.98Ω
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Pre-Irradiation
Absolute Maximum Ratings ( Per Die)
Parameter
= ±12V, T = 25°C Continuous Drain Current
C
N-Channel
4.6
P-Channel
-2.8
Units
I
@ V
@ V
D
GS
A
I
= ±12V, T = 100°C Continuous Drain Current
2.9
-1.8
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
18.4
12
-11.2
12
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.1
0.1
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
±20
±20
GS
E
47 ➀
4.6
70➀➀
-2.8
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
1.2
1.2
mJ
V/ns
AR
dv/dt
6.1 ➀
7.1 ➀
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
07/25/01
IRHQ567110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.13
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
3.3
—
—
—
—
—
—
—
0.31
0.27
4.0
—
V
V
= 12V, I = 4.6A
D
DS(on)
GS
GS
➀
Ω
= 12V, I = 2.9A
D
V
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 2.9A ➀
DS
V
DS
I
10
25
= 80V, V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
13
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 4.6A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
4.0
3.9
20
V
= 50V
DS
t
t
t
t
V
= 50V, I = 4.6A,
DD
GS
D
24
32
V
= 12V, R = 7.5Ω
G
ns
d(off)
f
90
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
371
108
3.0
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
4.6
18.4
1.2
173
863
S
A
SM
V
t
V
nS
nC
T = 25°C, I = 4.6A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 4.6A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
≤ 50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
11.8
60
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHQ567110
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.13
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
1.9
—
—
—
—
—
—
—
1.2
0.96
-4.0
—
Ω
V
V
= -12V, I = -2.8A
D
DS(on)
GS
GS
➀
= -12V, I = -1.8A
D
V
V
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> -15V, I
= -1.8A ➀
DS
V
DS
I
-10
-25
= -80V, V =0V
GS
DSS
DS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
11
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -2.8A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
3.0
4.2
20
V
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -2.8A,
D
24
32
= -12V, R = 7.5Ω
GS G
ns
d(off)
f
90
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
377
102
7.0
—
—
—
V
GS
= 0V, V
= -25V
iss
oss
rss
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-2.8
-11.2
-5.0
138
S
A
SM
V
t
V
nS
nC
T = 25°C, I = -2.8A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = -2.8A, di/dt ≤ -100A/µs
j
F
V
Q
Reverse Recovery Charge
555
≤ -50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
11.8
60
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
For footnotes refer to the last page
www.irf.com
3
IRHQ567110
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
Parameter
100K Rads(Si)1
Min Max
300K Rads (Si)2 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
100
2.0
—
—
4.0
100
2.0
—
—
4.0
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
-100
10
V
V
= 20V
= -20 V
GSS
GS
GS
nA
I
—
—
GSS
I
—
—
µA
V
= 80V, V =0V
GS
= 12V, I = 2.9A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
—
0.226
—
0.246
Ω
V
R
DS(on)
➀
—
—
0.27
1.2
—
—
0.29
1.2
Ω
V
= 12V, I = 2.9A
D
GS
V
SD
➀
V
V
= 0V, I = 4.6A
GS S
1. Part number IRHQ567110
2. Part number IRHQ563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
Energy Range
MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS= -8V @VGS=-10V @VGS=-15V
@VGS=-20V
100
25
Br
I
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
100
100
100
80
100
35
—
Au
25
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
www.irf.com
Pre-Irradiation
IRHQ567110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
Parameter
100K Rads(Si)1 300K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
- 2.0
—
—
-4.0
-100
100
-100
- 2.0
—
—
-4.0
-100
100
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
V
= V , I = -1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
V
GS
GSS
I
—
-10
—
-10
µA
V
= -80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
—
0.916
—
0.936
Ω
V
= -12V, I = -1.8A
D
GS
DS(on)
R
DS(on)
➀
—
—
0.96
-5.0
—
—
0.98
-5.0
Ω
V
= -12V, I = -1.8A
D
GS
GS
V
SD
➀
V
V
= 0V, I = -2.8A
S
1. Part number IRHQ567110
2. Part number IRHQ563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
Energy Range
MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
@VGS=20V
-100
Br
I
37.3
59.9
82.3
285
344
351
36.8
32.7
28.5
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-30
-100
-75
—
-25
Au
—
-120
-100
-80
-60
-40
-20
0
Br
I
Au
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
IRHQ567110
Pre-Irradiation
N-Channel
Q1,Q4
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
4.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
6
www.irf.com
Pre-Irradiation
IRHQ567110
N-Channel
Q1,Q4
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 4.6A
D
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
C
= C + C
gd
oss
ds
600
400
200
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
°
T = 150 C
J
°
T = 25 C
J
1ms
Tc = 25°C
10ms
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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7
IRHQ567110
Pre-Irradiation
N-Channel
Q1,Q4
RD
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x
Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
www.irf.com
Pre-Irradiation
IRHQ567110
N-Channel
Q1,Q4
100
I
D
TOP
2.1A
2.9A
15V
80
60
40
20
0
BOTTOM 4.6A
DRIVER
L
V
D S
D.U .T
R
.
G
+
-
V
D D
I
A
AS
2VGS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
V
J
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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9
IRHQ567110
Pre-Irradiation
P-Channel
Q2,Q3
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
10
10
-5.0V
-5.0V
1
1
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
-2.8A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
5.0
6.0
7.0
8.0 9.0 10.0
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
10
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Pre-Irradiation
IRHQ567110
P-Channel
Q2,Q3
20
600
500
400
300
200
100
I
D
= -2.8A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C
rss
C
= C + C
gd
16
12
8
oss
ds
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
0
2
4
6
8
10
12
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10
1
°
T = 150 C
J
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
1.0
0.1
2.0
3.0
4.0
5.0
6.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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11
IRHQ567110
Pre-Irradiation
P-Channel
Q2,Q3
RD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x
Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
12
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Pre-Irradiation
IRHQ567110
P-Channel
Q2,Q3
L
V
DS
150
I
D
TOP
-1.3A
-1.8A
D.U.T
R
.
G
V
DD
A
120
90
60
30
0
BOTTOM -2.8A
I
AS
DRIVER
VGV
-20
S
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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13
IRHQ567110
Footnotes:
Pre-Irradiation
➀➀Total Dose Irradiation with V
Bias.
GS
= 0 during
➀➀ Repetitive Rating; Pulse width limited by
12 volt V
applied and V
DS
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
➀➀➀V
= 25V, starting T = 25°C, L= 4.4mH,
J
DD
Peak I = 4.6A, V
=12V
➀➀Total Dose Irradiation with V Bias.
L
GS
DS
= 0 during
80 volt V
applied and V
GS
➀➀ I
≤ 4.6A, di/dt ≤ 300A/µs,
≤ 100V, T ≤ 150°C
J
DS
SD
irradiation per MlL-STD-750, method 1019, condition A
V
DD
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀V = - 25V, starting T = 25°C, L=17.8mH,
DD
Peak I = - 2.8A, V
J
= -12V
L
GS
➀ I
≤ - 2.8A, di/dt ≤ - 263A/µs,
SD
V
≤ -100V, T ≤ 150°C
J
DD
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
Q3
Q2
Q4
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
14
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