IRHQ57110 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL; 抗辐射功率MOSFET表面贴装（ LCC - 28 ） ， 100V ，四N沟道
| 型号： | IRHQ57110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94211A
IRHQ57110
100V, Quad N-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-28)
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ57110 100K Rads (Si)
IRHQ53110 300K Rads (Si)
IRHQ54110 600K Rads (Si)
0.27Ω
0.27Ω
0.27Ω
4.6A
4.6A
4.6A
4.6A
IRHQ58110 1000K Rads (Si) 0.29Ω
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
4.6
D
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
2.9
18.4
12
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.1
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
47
mJ
A
AS
I
4.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.2
mJ
V/ns
AR
dv/dt
6.1
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
08/01/01
IRHQ57110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.13
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.31
0.27
4.0
—
V
V
= 12V, I = 4.6A
D
DS(on)
GS
GS
➀
Ω
= 12V, I = 2.9A
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
3.3
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 2.9A ➀
DS
V
DS
I
10
= 80V, V =0V
DS GS
DSS
µA
—
25
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
13
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
= 12V, I = 4.6A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.0
3.9
20
V
= 50V
DS
t
t
t
t
V
= 50V, I = 4.6A,
= 12V, R = 7.5Ω
DD
GS
D
G
24
V
ns
Turn-Off Delay Time
Fall Time
32
d(off)
f
90
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
371
108
3.0
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
4.6
18.4
1.2
S
A
I
SM
V
V
T = 25°C, I = 4.6A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
173
863
nS
nC
T = 25°C, I = 4.6A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 25V ➀
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thJA
Junction-to-Case
—
—
—
—
11.8
60
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHQ57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation➀➀ (Per Die)
1000K Rads (Si)2
Parameter
Up to 600K Rads(Si)1
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage 100
—
4.0
100
-100
10
100
1.5
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
2.0
—
—
—
—
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
V
GS
= 20V
GSS
GSS
nA
—
= -20 V
I
—
µA
V
= 80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
0.226
—
0.246
Ω
V
= 12V, I = 2.9A
D
GS
GS
GS
R
DS(on)
➀
—
—
0.27
1.2
—
—
0.29
1.2
Ω
V
= 12V, I = 2.9A
D
V
SD
➀
V
V
= 0V, I = 4.6A
S
1. Part number IRHQ57110, IRHQ53110, IRHQ54110
2. Part number IRHQ58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
43.0
39.0
32.6
100
100
50
100
80
40
100
70
35
100
50
—
70
—
—
36.8
59.8
120
100
80
60
40
20
0
Cu
Br
I
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ57110
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
4.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=12V
GS
0.1
5.0
6.0
7.0
8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHQ57110
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 4.6A
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
C
= C + C
gd
oss
ds
600
400
200
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
°
T = 150 C
J
°
T = 25 C
J
1ms
Tc = 25°C
10ms
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHQ57110
Pre-Irradiation
RD
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
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Pre-Irradiation
IRHQ57110
100
80
60
40
20
0
I
D
TOP
2.1A
2.9A
BOTTOM 4.6A
1 5V
DRIVER
L
V
G
DS
D.U.T
R
.
+
V
D D
-
I
A
AS
2VGS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ57110
Footnotes:
Pre-Irradiation
➀ Repetitive Rating; Pulse width limited by
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
maximum junction temperature.
GS
= 0 during
➀ V
= 25V, starting T = 25°C, L= 4.4mH,
J
DD
Peak I = 4.6A, V
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A
DS
=12V
L
GS
➀ I
≤ 4.6A, di/dt ≤ 300A/µs,
≤ 100V, T ≤ 150°C
J
SD
DD
➀ Total Dose Irradiation with V Bias.
DS
= 0 during
V
80 volt V
applied and V
DS
irradiation per MlL-STD-750, method 1019, condition A
GS
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
Q3
Q2
Q4
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/02
8
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