IRHQ57214SEPBF [INFINEON]

Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28;


型号：	IRHQ57214SEPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28
文件：	总8页 (文件大小：178K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ꢁ

PD-93881C

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

IRHQ57214SE

250V, QUAD N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHQ57214SE 100K Rads (Si) 1.5Ω

1.9A

LCC-28

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects(SEE) with useful

performance up to an LET of 80 (MeV/(mg/cm²)). The

combination of low RDS(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control.

These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature

stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

ProtonTolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

n Light Weight

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.9

1.2

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

7.6

@ T = 25°C

W/°C

0.1

Gate-to-Source Voltage

Single PulseAvalanche Energy Á

Avalanche Current À

±20

1.9

RepetitiveAvalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

1.2

V/ns

dv/dt

9.9

-55 to 150

^oC

STG

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

0.89 (Typical)

For footnotes refer to the last page

www.irf.com

05/19/05

IRHQ57214SE

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

250

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.28

—

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

1.5

Ω

V = 12V, I = 1.2A

GS D

DS(on)

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.5

1.4

—

4.5

—

S ( )

= V , I = 1.0mA

GS(th)

Ω

> 15V, I

= 1.2A Ã

= 200V ,V =0V

DSS

DS GS

µA

—

= 200V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

—

6.1

100

-100

8.0

2.1

3.4

—

= 20V

= -20V

GSS

=12V, I = 1.9A

d(on)

GS D

= 125V

= 125V, I = 1.9A

=12V, R = 7.5Ω

d(off)

+ L

Total Inductance

Measured from the center of

drain pad to center of source pad

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

338

2.6

—

= 0V, V

f = 1.0MHz

= 25V

Ciss

GS DS

oss

rss

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.9

7.6

1.2

168

771

T = 25°C, I = 1.9A, V

= 0V Ã

T = 25°C, I = 1.9A, di/dt ≤ 100A/µs

≤ 25V Ã

ForwardTurn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance (Per Die)

Parameter

Min Typ Max Units

Test Conditions

°C/W

thJC

Junction-to-Case

—

10.4

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

IRHQ57214SE

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

250

2.0

—

4.5

100

-100

= 0V, I = 1.0mA

DSS

GS D

= V , I = 1.0mA

GS(th)

= 20V

GSS

DSS

µA

= -20V

= 200V, V =0V

DS GS

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (LCC-28)

DS(on)

—

1.45

Ω

= 12V, I = 1.2A

DS(on)

—

1.5

1.2

Ω

= 12V, I = 1.2A

Diode Forward Voltage

= 0V, I = 1.9A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area (Per Die)

V_DS(V)

Ion

LET

MeV/(mg/cm²))

36.7

Energy

(MeV)

309

341

350

Range

(µm) @V_GS=0V @V_GS=-5V @V_GS=-10V @V_GS=-15V @V_GS=-20V

39.5

32.5

28.4

250

225

250

175

250

240

59.8

82.3

300

250

200

150

100

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHQ57214SE

Pre-Irradiation

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

VGS

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

BOTTOM5.0V

5.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.5

2.0

1.5

1.0

0.5

0.0

1.9A

T = 150 C

T = 25 C

= 50V

=12V

20µs PULSE WIDTH

0.1

5.0

6.0

7.0 8.0

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

T , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

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Pre-Irradiation

IRHQ57214SE

600

= 0V,

f = 1MHz

C SHORTED

= 1.9A

= C + C

= 200V

= 125V

= 50V

iss

gd ,

= C

rss

500

400

300

200

100

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

T = 150 C

Single Pulse

10ms

= 0 V

0.1

0.2

0.1

0.6

0.9

1.3

1.6

100

1000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHQ57214SE

Pre-Irradiation

2.0

1.6

1.2

0.8

0.4

0.0

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

Notes:

1. Duty factor D =

0.01

SINGLE PULSE

(THERMAL RESPONSE)

t / t

2. Peak T =P

x Z

+ T

thJC

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRHQ57214SE

TOP

0.8A

1.2A

15V

BOTTOM 1.9A

DRIVER

D.U.T

V_GS

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHQ57214SE

Footnotes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

Á V

= 50V, starting T = 25°C, L= 16.4 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 1.9A, V

= 12V

Å Total Dose Irradiation with V

Bias.

Â I

≤ 1.9A, di/dt ≤ 205A/µs,

≤ 250V, T ≤ 150°C

= 0 during

200 volt V

applied and V

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — LCC-28

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2005

www.irf.com

IRHQ57214SEPBF [INFINEON]

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