IRHQ57214SESCSPBF [INFINEON]
Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28;
| 型号： | IRHQ57214SESCSPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93881A
RADIATION HARDENED
POWER MOSFET
IRHQ57214SE
250V, QUAD N-CHANNEL
SURFACE MOUNT (LCC-28)
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHQ57214SE 100K Rads (Si)
1.5Ω
1.9A
LCC-28
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n LowTotal Gate Charge
n ProtonTolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
1.9
D
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
1.2
7.6
GS
C
I
Pulsed Drain Current ➀
Max.Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
12
W
W/°C
V
D
C
0.1
V
Gate-to-SourceVoltage
±20
30
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
1.9
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.2
mJ
V/ns
AR
dv/dt
9.9
T
-55 to 150
J
T
STG
StorageTemperature Range
oC
g
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes refer to the last page
www.irf.com
1
01/04/01
IRHQ57214SE
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
250
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.28
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.5
Ω
V
= 12V, I = 1.2A
GS D
DS(on)
➀
V
g
Gate Threshold Voltage
ForwardTransconductance
Zero GateVoltage Drain Current
2.5
1.4
—
—
—
—
—
4.5
—
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
V
> 15V, I
= 1.2A ➀
DS
DS
I
10
25
V
= 200V ,V =0V
DS GS
DSS
µA
—
V
= 200V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
16
V
= 20V
GSS
GSS
g
GS
nA
nC
V
GS
= -20V
V
=12V, I = 1.9A
GS D
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On DelayTime
4.3
4.8
25
V
= 125V
gs
DS
Q
gd
t
t
t
t
V
= 125V, I = 1.9A
d(on)
DD
GS
D
Rise Time
20
V
=12V,R = 7.5Ω
r
G
ns
nH
Turn-Off Delay Time
FallTime
35
20
d(off)
f
L
+ L
Total Inductance
—
S
D
Measured from the center of
drain pad to center of source pad
Input Capacitance
—
—
—
338
53
—
—
—
V
= 0V, V
= 25V
Ciss
GS DS
C
Output Capacitance
pF
f = 1.0MHz
oss
rss
C
ReverseTransfer Capacitance
2.6
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode ForwardVoltage
—
—
—
—
—
—
—
—
—
—
1.9
7.6
1.2
168
771
S
A
SM
V
t
V
T = 25°C, I = 1.9A, V
= 0V ➀
GS
j
SD
S
Reverse RecoveryTime
ns
T = 25°C, I = 1.9A, di/dt ≤ 100A/µs
j
rr
F
V
Q
Reverse Recovery Charge
nC
≤ 25V ➀
DD
RR
t
on
ForwardTurn-OnTime
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
thJC
Junction-to-Case
—
—
10.4
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHQ57214SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀➀(Per Die)
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source BreakdownVoltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero GateVoltage Drain Current
250
2.0
—
—
4.5
100
-100
10
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
V
= 20V
GSS
GS
nA
µA
I
—
V
GS
= -20V
GSS
I
—
V
= 200V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
DS(on)
—
1.45
Ω
V
GS
= 12V, I = 1.2A
D
R
DS(on)
On-State Resistance (LCC-28)
—
—
1.5
1.2
Ω
V
= 12V, I = 1.2A
D
GS
V
SD
Diode ForwardVoltage
V
V
= 0V, I = 1.9A
D
GS
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
36.7
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
39.5
32.5
28.4
250
250
250
250
250
250
250
250
225
250
250
175
250
240
50
59.8
82.3
300
250
200
150
100
50
Br
I
Au
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ57214SE
Pre-Irradiation
10
10
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150 C
J
°
T = 25 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
1.9A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
1
= 50V
V
DS
V
= 12V
20µs PULSE WIDTH
GS
0.1
5.0
6.0
7.0 8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHQ57214SE
600
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= 1.9A
GS
C
= C + C
SHORTED
V
V
V
= 200V
= 125V
= 50V
iss
gs
gd ,
ds
DS
DS
DS
C
= C
rss
gd
500
400
300
200
100
0
C
= C + C
oss
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
1
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
10ms
V
= 0 V
GS
0.1
0.2
0.1
0.6
0.9
1.3
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHQ57214SE
Pre-Irradiation
2.0
1.6
1.2
0.8
0.4
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
t
1
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHQ57214SE
80
60
40
20
0
I
D
TOP
0.8A
1.2A
BOTTOM 1.9A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHQ57214SE
Footnotes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V = 50V, startingT = 25°C, L= 16.4 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 1.9A, V
= 12V
L
GS
➀➀Total Dose Irradiation withV Bias.
➀➀I ≤ 1.9A, di/dt ≤ 205A/µs,
DS
applied and V = 0 during
SD
200 volt V
DS
V
DD
≤ 250V, T ≤ 150°C
J
GS
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/01
8
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