IRHQ63110 [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28); 抗辐射功率MOSFET表面贴装（ LCC -28 ）
| 型号： | IRHQ63110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| 文件： | 总14页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91781B
IRHQ6110
100V, Combination 2N-2P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
MOSFET TECHNOLOGY
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
ID
CHANNEL
IRHQ6110
IRHQ63110
IRHQ6110
IRHQ63110
100K Rads (Si)
300K Rads (Si)
100K Rads (Si)
0.6Ω
0.6Ω
1.1Ω
3.0A
3.0A
-2.3A
-2.3A
N
N
P
P
300K Rads (Si) 1.1Ω
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
Single Event Effect (SEE) Hardened
n
n
n
n
n
n
n
n
n
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Continuous Drain Current
N-Channel
3.0
P-Channel
-2.3
Units
I
@ V
@ V
= 12V, T = 25°C
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
1.9
-1.5
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
12
-9.2
DM
@ T = 25°C
P
D
12
12
W
W/°C
V
C
0.1
0.1
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
±20
±20
GS
E
85 ➀
3.0
75 ➀
-2.3
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
1.2
1.2
mJ
V/ns
AR
dv/dt
3.0 ➀
9.0 ➀
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
0.89 (Typical)
For footnotes, refer to the last page
www.irf.com
1
03/24/04
IRHQ6110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.62
0.60
4.0
—
V
V
= 12V, I = 3.0A
D
DS(on)
GS
GS
➀
Ω
= 12V, I = 1.9A
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
1.4
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 1.9A ➀
DS
V
DS
I
25
= 80V, V =0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
17
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
= 12V, I = 3.0A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.0
5.5
13
V
= 50V
DS
t
t
t
t
V
= 50V, I = 3.0A,
= 12V, R = 7.5Ω
DD
GS
D
G
16
V
ns
Turn-Off Delay Time
Fall Time
23
d(off)
f
15
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
270
110
23
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
3.0
12
S
A
I
SM
V
1.2
173
863
V
T = 25°C, I = 3.0A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = 3.0A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 25V ➀
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
10.4
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
www.irf.com
Pre-Irradiation
IRHQ6110
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.10
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
1.1
Ω
V
= -12V, I = -1.5A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
1.1
—
—
—
—
—
-4.0
—
V
S ( )
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
V
> -15V, I
= -1.5A ➀
DS
V
DS
I
-25
-250
= -80V, V =0V
DS GS
DSS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
16
V
= -20V
GSS
GS
nA
nC
V
= 20V
GSS
GS
Q
Q
Q
V
= -12V, I = -2.3A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.3
3.3
21
V
= -50V
DS
t
t
t
t
V
= -50V, I = -2.3A,
DD
GS
D
17
V
= -12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
32
32
d(off)
f
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
285
90
13
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-2.3
-9.2
-3.0
138
555
S
SM
A
V
t
V
T = 25°C, I = -2.3A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
nS
nC
T = 25°C, I = -2.3A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
V
DD
≤ -25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
10.4
thJC
For footnotes, refer to the last page
www.irf.com
3
IRHQ6110
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
Parameter
100KRads(Si)
300K to 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
2.0
—
—
4.0
100
-100
25
100
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
I
V
= 20V
GSS
GSS
DSS
GS
GS
nA
—
—
V
= -20 V
—
—
µA
V
= 80V, V =0V
DS GS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
—
0.556
—
0.706
Ω
V
= 12V, I = 1.9A
D
GS
GS
GS
DS(on)
R
DS(on)
➀
—
—
0.60
1.2
—
—
0.75
1.2
Ω
V
= 12V, I = 1.9A
D
V
SD
➀
V
V
= 0V, I = 3.0A
S
1. Part number IRHQ6110
2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
43.0
39.0
32.6
100
100
50
100
80
40
100
70
35
100
50
—
70
—
—
36.8
59.8
120
100
80
60
40
20
0
Cu
Br
I
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
4
www.irf.com
Pre-Irradiation
IRHQ6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ➀➀
Parameter
100KRads(Si)1
300K to 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
- 2.0
—
—
-4.0
-100
100
-100
- 2.0
—
—
-5.0
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
= V , I = -1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-100
100
- 25
1.056
V
= -20V
= 20 V
GSS
GS
nA
—
—
—
—
V
GS
GSS
I
-25
µA
V
= -80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
➀
—
1.056
—
Ω
V
= -12V, I = -1.5A
D
GS
R
DS(on)
➀
—
—
1.1
—
—
1.1
Ω
V
= -12V, I = -1.5A
D
GS
GS
V
SD
➀
-3.0
-3.0
V
V
= 0V, I = -2.3A
S
1. Part numbers IRHQ6110
2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
- 50
—
-60
-40
—
36.8
59.8
-120
-100
-80
Cu
Br
I
-60
-40
-20
0
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
www.irf.com
5
IRHQ6110
Pre-Irradiation
N-Channel
Q1,Q4
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
10
10
1
1
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
3.0
3.0A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
7
9
11 13
15
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
6
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Pre-Irradiation
IRHQ6110
N-Channel
Q1,Q4
500
400
300
200
100
20
16
12
8
3.0A
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
GS
V
V
V
= 80V
= 50V
= 20V
C
= C + C
DS
DS
DS
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
rss
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
100
0
2
4
6
8
10
12
14
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1ms
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
www.irf.com
7
IRHQ6110
Pre-Irradiation
N-Channel
Q1,Q4
RD
3.0
2.5
2.0
1.5
1.0
0.5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
1
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
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Pre-Irradiation
IRHQ6110
N-Channel
Q1,Q4
200
I
D
TOP
1.3A
1.9A
1 5V
BOTTOM 3.0A
150
100
50
DRIVER
L
V
G
DS
D.U.T
R
.
+
V
D D
-
I
A
AS
2VGS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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9
IRHQ6110
Pre-Irradiation
P-Channel
Q2,Q3
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
10
10
BOTTOM -5.0V
BOTTOM -5.0V
1
0.1
1
-5.0V
-5.0V
0.1
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 25 C
J
T = 150 C
J
0.01
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-2.3A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
0.1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 16. Typical Transfer Characteristics
Fig 17. Normalized On-Resistance
Vs.Temperature
10
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Pre-Irradiation
IRHQ6110
P-Channel
Q2,Q3
500
400
300
200
100
20
V
= 0V,
f = 1MHz
C
I
D
= -2.3A
GS
C
= C + C
SHORTED
ds
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd ,
gd
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
oss
16
12
8
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 26
C
rss
0
0
1
0
4
8
12
16
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 19. Typical Gate Charge Vs.
Fig 18. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.5
1
10
100
1000
1.0
1.5
2.0
2.5
3.0
3.5
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 20. Typical Source-Drain Diode
Fig 21. Maximum Safe Operating Area
ForwardVoltage
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11
IRHQ6110
Pre-Irradiation
P-Channel
Q2,Q3
RD
2.5
2.0
1.5
1.0
0.5
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 22. Maximum Drain Current Vs.
CaseTemperature
Fig 23b. Switching Time Waveforms
100
10
D = 0.50
0.20
P
DM
0.10
1
t
1
0.05
t
2
0.02
Notes:
1. Duty factor D = t / t
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig24. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
12
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Pre-Irradiation
IRHQ6110
P-Channel
Q2,Q3
L
V
D S
200
I
D
TOP
-1A
-1.5A
D .U .T
R
G
.
V
D D
BOTTOM -2.3A
I
A
A S
150
100
50
D R IV E R
VGS
-20V
0.01
Ω
t
p
15V
Fig 25a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 25c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig25b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 26b. Gate Charge Test Circuit
Fig 26a. Basic Gate Charge Waveform
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13
IRHQ6110
Pre-Irradiation
Footnotes:
➀ Total Dose Irradiation with V
Bias.
➀ Repetitive Rating; Pulse width limited by
GS
= 0 during
12 volt V
applied and V
maximum junction temperature.
GS
irradiation per MIL-STD-750, method 1019, condition A
DS
➀ V
= 25V, starting T = 25°C, L= 18.7mH,
J
DD
Peak I = 3.0A, V
= 12V
➀ Total Dose Irradiation with V Bias.
L
GS
DS
= 0 during
80 volt V
applied and V
➀ I
≤ 3.0A, di/dt ≤ 165A/µs,
≤ 100V, T ≤ 150°C
J
DS
irradiation per MlL-STD-750, method 1019, condition A
➀ V = - 25V, starting T = 25°C, L= 28.4mH,
GS
SD
V
DD
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
DD
Peak I = - 2.3A, V
J
= -12V
L
GS
➀ I
≤ - 2.3A, di/dt ≤ - 244A/µs,
SD
V
≤ -100V, T ≤ 150°C
J
DD
Case Outline and Dimensions — LCC-28
Q1
Q4
Q2
Q3
Q3
Q2
Q4
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2004
14
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