IRHY53Z30CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA); 抗辐射功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRHY53Z30CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总8页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-93824E
IRHY57Z30CM
JANSR2N7482T3
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/702
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
IRHY57Z30CM 100K Rads (Si) 0.03Ω
IRHY53Z30CM 300K Rads (Si) 0.03Ω
IRHY54Z30CM 500K Rads (Si) 0.03Ω
ID
QPL Part Number
18A* JANSR2N7482T3
18A* JANSF2N7482T3
18A* JANSG2N7482T3
IRHF58Z30CM 1000K Rads (Si) 0.035Ω 18A* JANSH2N7482T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
Features:
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
18*
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
18*
72
D
GS
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
177
18
GS
E
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
1.7
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/25/06
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Min Typ Max Units
Test Conditions
V = 0V, I = 1.0mA
BV
30
—
—
—
—
V
DSS
GS
D
∆BV
/∆T Temperature Coefficient of Breakdown
0.028
V/°C
Reference to 25°C, I = 1.0mA
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.03
Ω
V
= 12V, I = 18A
GS D
DS(on)
Ã
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
16
—
—
—
—
—
4.0
—
V
S ( )
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
V
≥ 15V, I
= 18A Ã
DS
DS
I
10
25
V
= 24V ,V =0V
DSS
DS GS
µA
—
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
65
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 18A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
20
10
25
V
= 15V
DS
t
t
t
t
V
DD
= 15V, I = 18A,
D
=12V, R = 7.5Ω
100
35
30
V
GS
G
ns
d(off)
f
L
+ L
Total Inductance
—
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2054
936
33
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
18*
72
S
A
I
SM
V
t
Q
1.2
102
193
V
ns
nC
T = 25°C, I = 18A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
F
V
≤ 25V Ã
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
1.67
80
thJC
thJA
°C/W
Junction-to-Ambient
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHY57Z30CM, JANSR2N7482T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
30
2.0
—
—
4.0
100
-100
10
30
1.5
—
—
—
—
—
4.0
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
V
GS
V
GS
= 20V
= -20 V
GSS
nA
—
GSS
I
—
—
µA
V
V
=24V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
0.025
0.03
= 12V, I =18A
GS
D
Ω
R
V
Ã
—
—
0.03
1.2
—
—
0.035
1.2
Ω
V
= 12V, I =18A
D
GS
DS(on)
Ã
V
= 0V, I = 18A
GS S
V
SD
1. Part numbers IRHY57Z30CM (JANSR2N7482T3), IRHY53Z30CM (JANSF2N7482T3) and IRHY54Z30CM (JANSG2N7482T3)
2. Part number IRHY58Z30CM (JANSH2N7482T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
28
37
60
261
285
344
40
37
33
30
30
25
30
30
25
30
30
20
25
23
15
15
15
8
35
30
25
20
15
10
5
Cu
Br
I
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
100
100
10
1
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM5.0V
BOTTOM 5.0V
5.0V
10
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
18A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
10
= 15V
V
DS
V
=12V
GS
20µs PULSE WIDTH
1
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
6.0
7.0
8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY57Z30CM, JANSR2N7482T3
4000
20
15
10
5
18A
V
= 0V,
f = 1MHz
gd , ds
I
D
=
GS
C
= C + C
C
SHORTED
iss
gs
V
V
V
= 24V
= 15V
= 6V
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
3200
2400
1600
800
0
oss
gd
C
oss
C
iss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
V
0
1
10
100
0
10
20
30
40 50
60
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
°
DS
T = 150 C
J
°
T = 25 C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
10ms
Single Pulse
V
= 0 V
GS
1
0.4
0.8
1.2
1.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
RD
50
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
40
30
20
10
0
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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6
Pre-Irradiation
IRHY57Z30CM, JANSR2N7482T3
400
300
200
100
0
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
2
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY57Z30CM, JANSR2N7482T3
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 15V, starting T = 25°C, L= 1.0mH
J
GS
DS
DD
Peak I = 18A, V
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V Bias.
= 12V
L
GS
 I
≤ 18A, di/dt ≤ 54A/µs,
DS
= 0 during
SD
24 volt V
DS
applied and V
V
DD
≤ 30V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-257AA
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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