IRHYB597034CMSCS [INFINEON]
Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL;
| 型号： | IRHYB597034CMSCS |
| 厂家： | 
Infineon |
| 描述： | Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL |
| 文件： | 总8页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-97000
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597034CM
60V, P-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number
Radiation Level RDS(on)
ID
IRHYB597034CM 100K Rads (Si) 0.087Ω -20A
IRHYB593034CM 300K Rads (Si) 0.087Ω -20A
Low-Ohmic
TO-257AA (Tab-less)
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-20
-13
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
-80
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
0.6
V
±20
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
134
mJ
A
AS
I
-20
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
-4.9
-55 to 150
T
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
3.7 ( Typical )
For footnotes refer to the last page
www.irf.com
1
05/17/05
IRHYB597034CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.066
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.087
Ω
V
= -12V, I = -13A Ã
D
DS(on)
GS
DS
-2.0
10
—
—
—
—
—
-4.0
—
-10
-25
V
S ( )
V
V
V
= V , I = -1.0mA
GS
GS(th)
fs
D
Ω
g
= -15V, I
= -13A Ã
DS
DS
I
= -48V ,V
DS GS
= 0V
DSS
µA
—
V
= -48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
18
13
25
65
75
50
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -12V, I = -20A
V
g
gs
gd
d(on)
r
GS
D
= -30V
DS
t
t
t
t
V
DD
V
= -30V, I = -20A
= -12V, R = 7.5Ω
GS G
D
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1560
565
62
—
—
—
—
V
= 0V, V
= - 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
6.5
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Q
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-20
-80
-5.0
100
200
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -20A, V
= 0V Ã
j
S
GS
T = 25°C, I =-20A, di/dt ≤ -100A/µs
j
F
V
≤ -25V Ã
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
thJC
thJA
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHYB597034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1
Min Max
300KRads(Si)2
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
-60
-2.0
—
—
-60
-2.0
—
—
V
V
= 0V, I = -1.0mA
DSS
GS D
V
V
-4.0
-100
100
-4.0
-100
100
= V , I = -1.0mA
GS
GS(th)
DS
D
I
I
V
V
=-20V
= 20 V
GSS
GS
nA
—
—
GSS
GS
I
R
Zero Gate Voltage Drain Current
—
—
-10
0.087
—
—
-10
0.087
µA
Ω
V
V
= -48V, V =0V
GS
= -12V, I =-13A
D
DSS
DS
GS
Static Drain-to-Source
Ã
DS(on)
On-State Resistance (TO-3)
Ã
R
Static Drain-to-Source On-State
—
—
0.087
-5.0
—
—
0.087
-5.0
Ω
V
= -12V, I =-13A
D
GS
DS(on)
Resistance(Low-OhmicTO-257AA)
Diode Forward Voltage
V
SD
Ã
V
V
GS
= 0V, I = -20A
S
1. Part number IRHYB597034CM
2. Part number IRHYB593034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm2))
37.9
Energy
(MeV)
252.6
314
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Br
I
Au
33.1
30.5
28.4
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 60
- 45
—
- 60
- 25
—
59.7
82.3
350
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHYB597034CM
Pre-Irradiation
100
100
10
1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
10
-5.0V
60µs PULSE WIDTH
Tj = 25°C
µ
60 s PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
I
= -20A
D
T
= 150°C
J
T
= 25°C
J
V
= -25V
DS
60µs PULSE WIDTH
V
= -12V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
5.5
6
6.5
7
7.5
8
8.5
9
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHYB597034CM
2500
20
16
12
8
V
C
= 0V,
= C
f = 1 MHz
GS
I = -20A
D
V
= -48V
= -30V
= -12V
+ C , C
SHORTED
DS
iss
gs
gd
ds
V
C
= C
DS
rss
gd
2000
V
C
= C + C
DS
oss
ds
gd
C
iss
1500
1000
500
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
0
10
100
0
10
Q
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Total Gate Charge (nC)
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
T
= 150°C
J
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 25°C
J
100µs
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
5
GS
1
0.1
1
10
100
1000
0
1
2
3
4
6
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHYB597034CM
Pre-Irradiation
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
0.1
DM
0.05
0.02
t
1
SINGLE PULSE
t
2
( THERMAL RESPONSE )
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYB597034CM
L
V
DS
250
200
150
100
50
I
D
-
D.U.T
R
TOP
-8.9A
G
V
DD
A
+
-12.6A
BOTTOM-20A
I
AS
DRIVER
V
-
GS
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
I
AS
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
.3µF
-12 V
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHYB597034CM
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
Á V
= -25V, starting T = 25°C, L=0.67mH
J
GS
DS
DD
Peak I =- 20A, V
irradiation per MIL-STD-750, method 1019, condition A.
= -12V
L
GS
Å Total Dose Irradiation with V Bias.
 I
SD
≤ - 20A, di/dt ≤ -370A/µs,
DS
= 0 during
-48 volt V
DS
applied and V
V
≤ - 60V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
DD
J
Case Outline and Dimensions — Low-Ohmic TO-257AA (Tab-less)
10.66 [.420]
10.42 [.410]
5.08 [.200]
4.83 [.190]
A
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
0.13 [.005]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
B
A
NOT ES:
LEAD ASSIGNMENTS
1. DIMENSIONING& TOLERANCINGPER ANSI Y14.5M-1994.
2. CONTROLLINGDIMENSION: INCH.
3. DIME NS IONS ARE S HOWN IN MIL L IME T E R S [INCHE S ].
4. T O-257AA TABLESS IS A MODIFIED JEDEC OUTLINE T O-257AA.
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2005
8
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