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IRHYB63230CMPBF [INFINEON]

Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN;
IRHYB63230CMPBF
型号： IRHYB63230CMPBF
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN

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PD-95818D  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
IRHYB67230CM  
200V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number  
IRHYB67230CM  
IRHYB63230CM  
Radiation Level RDS(on)  
100K Rads (Si) 0.13Ω 16A  
300K Rads (Si) 0.13Ω 16A  
ID  
Low-Ohmic  
TO-257AA Tabless  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2). Their combination of  
Features:  
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
very low R  
and faster switching times reduces  
DS(on)  
power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Hermetically Sealed  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
16  
10  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
64  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
83  
GS  
E
mJ  
A
AS  
I
16  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
9.0  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
3.7 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
06/15/10  
IRHYB67230CM  
Pre-Irradiation  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
200  
—
—
V
V
= 0V, I = 1.0mA  
D
DSS  
GS  
Reference to 25°C, I = 1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
—
0.19  
—
V/°C  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
0.13  
Ω
V = 12V, I = 10A Ã  
GS D  
DS(on)  
V
Gate Threshold Voltage  
Gate Threshold Voltage Coefficient  
Forward Transconductance  
2.0  
—
11  
—
—
-9.76  
—
—
—
4.0  
—
—
10  
25  
V
mV/°C  
S
V
= V , I = 1.0mA  
GS(th)  
DS  
DS  
GS  
D
∆V  
g
/∆T  
J
GS(th)  
fs  
V
V
= 10V, I  
= 10A Ã  
DS  
I
Zero Gate Voltage Drain Current  
= 160V ,V = 0V  
GS  
DSS  
DS  
µA  
—
V
= 160V,  
DS  
= 0V, T = 125°C  
V
GS  
J
I
I
Q
Q
Q
t
t
t
t
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Total Inductance  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8  
100  
-100  
42  
10  
20  
15  
40  
35  
15  
V
= 20V  
= -20V  
GSS  
GSS  
GS  
nA  
V
GS  
V
= 12V, I = 16A  
g
gs  
gd  
d(on)  
r
GS  
D
nC  
V
DS  
= 100V  
V
DD  
= 100V, I = 16A,  
= 12V, R = 7.5Ω  
GS G  
D
V
ns  
d(off)  
f
L
+ L  
—
Measured from Drain lead  
( 6mm / 0.025 in from package )  
to Source lead ( 6mm/ 0.025 in  
from package )  
nH  
S
D
Ciss  
Input Capacitance  
—
—
—
1660  
206  
2.6  
—
—
—
V
= 0V, V  
= 25V  
f = 1.0MHz  
GS  
DS  
C
C
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
pF  
oss  
rss  
f = 1.0MHz, open drain  
R
g
Ω
1.75  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
V
t
Q
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) À  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
—
—
—
—
16  
64  
1.2  
300  
3.2  
S
SM  
SD  
rr  
A
V
ns  
µC  
T = 25°C, I = 16A, V  
= 0V Ã  
j
S
GS  
T = 25°C, I = 16A, di/dt ≤ 100A/µs  
j
F
V
DD  
≤ 25V Ã  
RR  
t
on  
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
thJC  
R
thJA  
Junction-to-Case  
Junction-to-Ambient  
—
—
—
—
1.67  
80  
°C/W  
Typical Socket Mount  
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.  
For footnotes refer to the last page  
2
www.irf.com  
Radiation Characteristics  
IRHYB67230CM  
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
The hardness assurance program at International Rectifier is comprised of two radiation environments.  
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
conditions in order to provide a direct comparison.  
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ  
Parameter  
Up to 300K Rads (Si)1 Units  
Test Conditions  
Min  
Max  
BV  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
200  
2.0  
—
—
—
—
4.0  
100  
-100  
10  
V
= 0V, I = 1.0mA  
GS D  
DSS  
V
V
V
GS  
= V , I = 1.0mA  
GS(th)  
DS  
D
I
V
GS  
= 20V  
GSS  
nA  
µA  
I
V
= -20V  
GS  
GSS  
I
V
V
=160V, V =0V  
GS  
DSS  
DS  
GS  
GS  
R
DS(on)  
Static Drain-to-Source  
„
On-State Resistance (TO-3)  
Static Drain-to-Source On-State „  
Resistance (Low Ohmic TO-257)  
—
0.134  
Ω
= 12V, I = 10A  
D
R
DS(on)  
—
—
0.13  
1.2  
Ω
V
= 12V, I = 10A  
D
V
SD  
Diode Forward Voltage  
„
V
V
= 0V, I = 16A  
GS  
D
1. Part numbers IRHYB67230CM and IRHYB63230CM  
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
Table 2. Typical Single Event Effect Safe Operating Area  
LET  
Energy  
Range  
VDS (V)  
(MeV/(mg/cm2))  
(MeV)  
(µm)  
@VGS=  
0V  
@VGS=  
-5V  
@VGS=  
-10V  
@VGS=  
-15V  
42 ± 5%  
61 ± 5%  
90 ± 5%  
2450 ± 5%  
825 ± 5%  
1470 ± 5%  
205 ± 5%  
66 ± 5%  
80 ± 5%  
200  
200  
170  
200  
200  
170  
200  
200  
-
190  
190  
-
250  
200  
150  
100  
50  
LET=42 ± 5%  
LET=61 ± 5%  
LET=90 ± 5%  
0
0
-5  
-10  
-15  
Bias VGS (V)  
Fig a. Typical Single Event Effect, Safe Operating Area  
For footnotes refer to the last page  
www.irf.com  
3
IRHYB67230CM  
Pre-Irradiation  
100  
100  
10  
1
VGS  
VGS  
15V  
TOP  
15V  
12V  
10V  
9.0V  
8.0V  
7.0V  
6.0V  
TOP  
12V  
10V  
9.0V  
8.0V  
7.0V  
6.0V  
10  
1
5.0V  
BOTTOM 5.0V  
BOTTOM 5.0V  
5.0V  
60µs PULSE WIDTH  
Tj = 25°C  
60µs PULSE WIDTH  
Tj = 150°C  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.5  
100  
10  
1
16A  
=
I
D
T
= 150°C  
2.0  
1.5  
1.0  
0.5  
0.0  
J
T
= 25°C  
J
V
= 50V  
DS  
0µ  
6
s PULSE WIDTH  
V
=12V  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
2
4
6
8
10  
12  
14  
16  
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs.Temperature  
4
www.irf.com  
Pre-Irradiation  
IRHYB67230CM  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
I
= 16A  
D
T
= 150°C  
J
T
T
= 150°C  
= 25°C  
J
J
T
= 25°C  
J
V
= 12V  
60  
GS  
4
8
12  
16  
20  
24  
0
10  
20  
30  
40  
50  
70  
I , Drain Current (A)  
D
V
Gate -to -Source Voltage (V)  
GS,  
Fig 5. Typical On-Resistance Vs  
Fig 6. Typical On-Resistance Vs  
GateVoltage  
DrainCurrent  
250  
240  
230  
220  
210  
200  
190  
5.0  
I
= 1.0mA  
D
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
I
I
I
I
= 50µA  
D
= 250µA  
D
= 1.0mA  
D
= 150mA  
D
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
, Temperature ( °C )  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
, Temperature ( °C )  
T
T
J
J
Fig 7. Typical Drain-to-Source  
Breakdown Voltage Vs Temperature  
Fig 8. Typical Threshold Voltage Vs  
Temperature  
www.irf.com  
5
IRHYB67230CM  
Pre-Irradiation  
3000  
20  
16  
12  
8
V
= 0V,  
f =1MHz
C SHORTED  
ds  
GS  
C
= C + C  
I
= 16A  
iss  
gs  
gd ,  
D
V
V
V
= 160V  
C
= C  
DS  
DS  
DS  
rss  
gd  
C
= C + C  
= 100V  
= 40V  
2400  
1800  
1200  
600  
0
oss  
ds  
gd  
C
C
iss  
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 17  
0
1
10  
100  
0
10  
Q
20  
30  
40  
50  
60  
V
, Drain-to-Source Voltage (V)  
DS  
Total Gate Charge (nC)  
G,  
Fig 9. Typical Capacitance Vs.  
Fig 10. Typical Gate Charge Vs.  
Drain-to-SourceVoltage  
Gate-to-SourceVoltage  
100  
10  
16  
12  
8
T
= 150°C  
J
= 25°C  
T
J
1.0  
0.1  
4
V
= 0V  
GS  
0
25  
50  
75  
100  
125  
°
150  
0.2  
0.4  
SD  
0.6  
0.8  
1.0  
1.2  
T , Case Temperature ( C)  
C
V
, Source-to-Drain Voltage (V)  
Fig 11. Typical Source-Drain Diode  
Fig 12. Maximum Drain Current Vs.  
ForwardVoltage  
CaseTemperature  
6
www.irf.com  
Pre-Irradiation  
IRHYB67230CM  
160  
120  
80  
40  
0
1000  
I
D
OPERATION IN THIS AREA LIMITED  
BY R (on)  
TOP  
7.0A  
10A  
BOTTOM 16A  
DS  
100  
10  
1
100µs  
1ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
10ms  
DC  
0.1  
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
V
, Drain-to-Source Voltage (V)  
Starting T , Junction Temperature (°C)  
DS  
J
Fig 13. Maximum Safe Operating Area  
Fig 14. Maximum Avalanche Energy  
Vs. DrainCurrent  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.1  
P
DM  
t
1
0.01  
SINGLE PULSE  
t
2
( THERMAL RESPONSE )  
0.01  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t
, Rectangular Pulse Duration (sec)  
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
7
IRHYB67230CM  
Pre-Irradiation  
V
(BR)DSS  
t
p
15V  
DRIVER  
+
L
V
DS  
.
D.U.T  
R
G
V
DD  
-
I
A
AS  
V
.
GS  
I
AS  
0.01  
Ω
t
p
Fig 16a. Unclamped Inductive Test Circuit  
Fig 16b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
12V  
.2µF  
12V  
.3µF  
+
Q
Q
GD  
GS  
V
DS  
D.U.T.  
-
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 17a. Basic Gate Charge Waveform  
Fig 17b. Gate Charge Test Circuit  
RD  
V
VDS  
DS  
90%  
VGS  
VDD  
D.U.T.  
RG  
+
-
10%  
VGS  
V
GS  
PulseWidth ≤ 1 µs  
Duty Factor≤ 0.1 %  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 18b. Switching Time Waveforms  
Fig 18a. Switching Time Test Circuit  
8
www.irf.com  
Pre-Irradiation  
Footnotes:  
IRHYB67230CM  
À
Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
Ä Total Dose Irradiation with V Bias.  
GS  
= 0 during  
Á V  
= 25V, starting T = 25°C, L = 0.65mH  
J
12 volt V  
applied and V  
DD  
Peak I = 16A, V  
GS  
irradiation per MIL-STD-750, method 1019, condition A.  
DS  
= 12V  
L
GS  
 I  
≤ 16A, di/dt ≤ 750A/µs,  
Å Total Dose Irradiation with V  
Bias.  
SD  
DD  
DS  
applied and V = 0 during  
GS  
V
≤ 200V, T ≤ 150°C  
160 volt V  
J
DS  
irradiation per MlL-STD-750, method 1019, condition A.  
Case Outline and Dimensions — Low-Ohmic TO-257AA (Tabless)  
10.66 [.420]  
10.42 [.410]  
5.08 [.200]  
4.83 [.190]  
A
B
10.92 [.430]  
10.42 [.410]  
1
2
3
0.71 [.028]  
MAX.  
C
15.88 [.625]  
12.70 [.500]  
0.13 [.005]  
2.54 [.100]  
2X  
0.88 [.035]  
0.64 [.025]  
3X Ø  
3.05 [.120]  
Ø 0.50 [.020]  
B
A
LEAD ASSIGNMENTS  
NOT ES:  
1 = DRAIN  
2 = SOURCE  
3 = GATE  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
4. OUTLINE CONFORMS TOJEDECOUTLINE TO-257AA.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 06/2010  
www.irf.com  
9

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