IRKL430-18 [INFINEON]
SUPER MAGN-A-pak-TM Power Modules; SUPER MAGN -A -PAK -TM电源模块
| 型号： | IRKL430-18 |
| 厂家： | 
Infineon |
| 描述： | SUPER MAGN-A-pak-TM Power Modules |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27400 rev. A 09/97
IRK.430.. SERIES
SUPER MAGN-A-pakTM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
430 A
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
High voltage ratings up to 2000V
Industrial standard package
UL recognition pending
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
IRK.430..
430
Units
A
@ TC
82
°C
IT(RMS)
675
82
A
@ TC
°C
KA
KA
ITSMor IFSM @50Hz
15.7
16.4
1232
1125
@60Hz
2
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
12320
KA √s
VDRM/VRRM range
1600 to 2000
V
TSTG
TJ
range
range
-40to150
-40to130
°C
°C
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1
IRK.430.. Series
Bulletin I27400 rev. A 09/97
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = TJ max.
mA
Type number
IRK.430..
peak reverse voltage
repetitive peak rev. voltage
V
V
16
18
20
1600
1800
2000
1700
1900
2100
100
On-state Conduction
Parameter
IRK.430..
Units Conditions
IT(AV)
Maximum average on-state current
430
82
A
180° conduction, half sine wave
IF(AV)
@ Case temperature
°C
IT(RMS) Maximum RMS on-state current
675
A
180° conduction, half sine wave @ TC = 82°C
ITSM
IFSM
Maximum peak, one-cycle,
non-repetitive surge current
15.7
16.4
13.2
13.8
1232
1125
871
KA
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
795
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
12320
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.96
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
1.06
0.51
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
r
t2
0.45
1.65
VTM
VFM
Maximum on-state or forward
voltage drop
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
IH
IL
Maximum holding current
Typical latching current
500
mA TJ = 25°C, anode supply 12V resistive load
1000
Switching
Parameter
IRK.430..
1000
Units Conditions
di/dt
Maximum rate of rise of turned-on
current
A/µs TJ = TJ max., ITM = 400A, VDRM applied
t
Typical delay time
2.0
µs
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
200
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
q
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
2
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
Blocking
Parameter
IRK.430..
1000
Units Conditions
V/µs TJ = 130°C., linear to VD = 80% VDRM
dv/dt
Maximum critical rate of rise of off-state
voltage
VINS
IRRM
IDRM
RMS isolation voltage
3000
100
V
t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
IRK.430..
Units Conditions
PGM
10
2.0
3.0
20
W
W
A
T = T max., t < 5ms
p
J J
PG(AV) Maximum peak average gate power
+ IGM Maximum peak positive gate current
+ VGM Maximum peak positive gate voltage
TJ = TJ max., f = 50Hz, d% = 50
T = T max., t < 5ms
p
J
J
V
- VGM Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
mA TJ = 25°C Vak 12V
TJ = 25°C Vak 12V
VGT
IGD
3.0
10
V
mA TJ = TJ max.
V
VGD
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.430..
- 40 to 130
-40to150
0.065
Units Conditions
°C
TJ
T
Max. junctionoperatingtemperaturerange
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
K/W
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
A mounting compound is recommended and the
Nm
T
Mountingtorque ± 10%SMAP to heatsink
busbartoSMAP
6-8
12-15
1500
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
wt
Approximate weight
g
Case style
SUPER MAGN-A-pak See outline table
3
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
DeviceCode
IRK
T
430
-
20
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
~
1
~
1
~
+
2
+
2
+
2
-
-
3
3
3
-
7(K2)
4(K1) 7(K2)
4(K1)
6(G2)
5(G1)
6(G2)
5(G1)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
130
130
120
110
100
90
IRK.430.. Se rie s
IRK.430.. Se rie s
R
(DC) = 0.065 K/W
R
(DC ) = 0.065 K/W
th JC
thJC
120
110
100
Co nd uc tio n Ang le
Conduc tio n Pe rio d
90
80
70
60°
30°
30°
90°
60°
90°
120°
80
120°
180°
180°
DC
70
0
100
200
300
400
500
0
100 200 300 400 500 600 700
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
5
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
1000
900
800
700
600
500
400
300
200
100
0
700
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
600
500
400
300
200
100
0
RMS Lim it
RMS Limit
C onduc tio n Ang le
Co nd uctio n Perio d
IRK.430.. Se rie s
Pe r Junc tion
IRK.430.. Se rie s
Pe r Junc tion
T = 130°C
T
= 130°C
J
J
0
100
200
300
400
500
0
100 200 300 400 500 600 700
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te Curre n t (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
15000
14000
13000
12000
11000
10000
9000
16000
15000
14000
13000
12000
11000
10000
9000
At Any Ra te d Lo a d C ond itio n And With
Ma ximu m No n Re p etitive Surg e C u rre nt
Ve rsus Pulse Tra in Dura tion. Control
Of C o nd uc tio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lie d Following Surge .
RRM
In itia l T = 130°C
J
In itia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
8000
8000
IRK.430.. Se rie s
Pe r Junc tion
IRK.430.. Se rie s
Pe r Junc tion
7000
7000
6000
6000
0.01
0.1
1
1
10
100
Num be r O f Equa l Am plitud e Ha lf Cyc le C urrent Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
800
0
0
t
180°
120°
90°
60°
.
h
.
1
0
2
S
A
9
700
K
/
K
/
W
0
.
W
.
1
6
600
K
/
W
0
30°
2
C ond uctio n Angle
K
/
500
400
300
200
W
0
.
3
K
/
W
IRK.430.. Se rie s
Pe r Mo dule
= 130°C
100
0
T
J
0
100 200 300 400 500 600 700
20
40
60
80
100
120
Ma ximum Allo wa b le Am bie nt Te mp e ra ture (°C)
To ta l RMS O utp ut Curre nt (A)
Fig. 7 - On-state Power Loss Characteristics
6
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
3000
2500
2000
1500
1000
500
180°
(Sin e )
180°
1
.
5
K
/
W
2
(Re c t)
K
/
W
3
K
/
W
5
K
/
W
1
0
K
/
W
W
2 x IRK.430.. Se rie s
Single Pha se Brid ge
C onne c te d
1
5
K
/
T
= 130°C
J
0
0
100 200 300 400 500 600 700 800 90
0
20
40
60
80
100
120
To ta l Outp ut C urre n t (A)
Ma ximum Allo wa b le Amb ie nt Te mp e ra ture (°C )
Fig. 8 - On-state Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
t
h
S
A
120°
(Re c t)
0
.
0
5
K
/
W
3 x IRK.430.. Se rie s
Thre e Pha se Brid ge
Co nne cte d
0
.2
K
/
W
T = 130°C
J
0
0
200 400 600 800 1000 1200 14
00
20
40
60
80
100
120
To ta lO utp ut C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te mp e ra ture (°C)
Fig. 9 - On-state Power Loss Characteristics
0.1
10000
1000
100
IRK.430.. Se rie s
Pe r Junc tion
T = 25°C
J
T = 130°C
J
0.01
Ste a dy Sta te Va lue :
= 0.065 K/W
IRK.430.. Se rie s
Pe r Junc tio n
R
thJC
(DC O p e ra tio n)
0.001
0.5
1
1.5
2
2.5
3
3.5
0.001
0.01
0.1
1
10
100
In sta n ta n eo us O n -sta te Vo lta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
7
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
100
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 4m s
(2) PGM = 20W, tp = 2m s
(3) PGM = 40W, tp = 1m s
(4) PGM = 60W, tp = 0.66m s
a ) Re c o m me nd e d lo a d line for
ra te d d i/ d t : 20V, 10o hm s; tr<=1 µs
b ) Re c o m me nd e d lo a d line for
<=30% ra te d d i/ d t : 10V, 10oh ms
tr<=1 µs
10
1
(a )
(b )
(1) (2) (3) (4)
VG D
IGD
IRK.430.. Se rie s
0.1
Fre q ue nc y Lim ite d b y PG(AV)
0.1
0.001
0.01
1
10
100
Insta nta ne o us Ga te C urre nt (A)
Fig. 12 - Gate Characteristics
8
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