IRL2910SPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET型号: | IRL2910SPBF |
厂家: | Infineon |
描述: | HEXFET㈢ Power MOSFET |
文件: | 总11页 (文件大小:686K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95149
IRL2910S/LPbF
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
D
VDSS = 100V
RDS(on) = 0.026Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 55A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
itslowinternalconnectionresistanceandcandissipateup
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
2
T O -262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
55
39
190
3.8
200
1.3
± 16
520
29
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
04/19/04
IRL2910S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mAꢀ
––– ––– 0.026
––– ––– 0.030
––– ––– 0.040
VGS = 10V, ID = 29A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 5.0V, ID = 29A
VGS = 4.0V, ID = 24A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 29Aꢀ
VGS(th)
gfs
Gate Threshold Voltage
1.0
28
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 140
––– ––– 20
––– ––– 81
V
DS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
GS = 16V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
VGS = -16V
ID = 29A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 5.0V, See Fig. 6 and 13 ꢀ
–––
11 –––
VDD = 50V
––– 100 –––
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
49 –––
55 –––
RG = 1.4Ω, VGS = 5.0V
RD = 1.7Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
7.5
–––
–––
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3700 –––
––– 630 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
55
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
190
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 240 350
––– 1.8 2.7
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 25°C, IF = 29A
ns
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.2mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRL2910 data and test conditions
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2910S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µ s PULSE W IDTH
20µ s PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 48A
D
TJ = 25°C
TJ = 175°C
V DS = 50V
20µs PULSE W IDTH
V
= 10V
G S
1
A
6.0 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
T
J
, Junction Temperature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRL2910S/LPbF
15
12
9
6000
I
= 29A
D
V
C
C
C
= 0V ,
f = 1MHz
G S
iss
rss
oss
V
V
V
= 80V
= 50V
= 20V
= C
+ C
+ C
,
C
SHORTE D
DS
DS
DS
gs
gd
ds
= C
gd
5000
4000
3000
2000
1000
0
C
iss
= C
ds
gd
6
C
C
oss
rss
3
FO R TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
40
80
120
160
200
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPE RATION IN THIS AREA LIMITE D
BY R
DS(on)
10µ s
100µ s
100
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
V
= 0V
G S
A
10
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRL2910S/LPbF
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
A
175
25
50
75
100
125
150
T
, Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D
= 0.50
0 .20
P
D M
0 .10
0.05
0.1
t
1
t
2
0 .02
0.01
Notes:
1. D uty factor D
S IN G LE P U LS E
(TH E R M A L R E S P O N S E )
=
t
/ t
2
1
2. Peak T = P
x Z
+ T
C
D M
J
th JC
1
A
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Re ctan gular Pulse Du ration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2910S/LPbF
1400
1200
1000
800
600
400
200
0
I
D
TOP
12A
20A
29A
1 5V
BO TTO M
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
25
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Tem perature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
5.0 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRL2910S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2910S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T HIS IS AN IRF 530S WIT H
PART NU MB E R
LOT CODE 8024
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB LE D ON WW 02, 2000
IN T H E AS S E MB LY LINE "L"
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
AS S E MB LY
LOT CODE
LINE
L
OR
PART NUMBE R
INT E RNAT IONAL
RE CT IF IE R
LOGO
F 530S
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPT IONAL)
YE AR 0 = 2000
AS S E MBLY
LOT CODE
WE E K 02
A = AS S EMB LY S IT E CODE
IRL2910S/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL 3103L
LOT CODE 1789
PAR T NU MBER
INT ER NAT IONAL
RE CT IF IER
LOGO
AS S E MBL ED ON WW 19, 1997
IN T HE AS S E MBLY LINE "C"
DAT E CODE
YE AR 7 = 1997
WE EK 19
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
AS S E MBLY
LOT CODE
LINE C
OR
PAR T NU MBER
DAT E CODE
INT ER NAT IONAL
RE CT IF IER
LOGO
P = DE S IGNAT ES LEAD-F REE
PR ODU CT (OPT IONAL)
YE AR 7 = 1997
AS S E MBLY
LOT CODE
WE EK 19
A = AS S E MBLY S IT E CODE
IRL2910S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1 .60 (.0 6 3)
1 .50 (.0 5 9)
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.014 5)
0.3 42 (.013 5)
FEED DIRECTIO N
TRL
11 .60 (.457)
11 .40 (.449)
1.8 5 (.0 73 )
1.6 5 (.0 65 )
24.30 (.957 )
23.90 (.941 )
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.1 36)
4.52 (.1 78)
16 .10 (.634)
15 .90 (.626)
FEED DIRECTIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX .
60.00 (2.362)
MIN .
30.40 (1.197)
M AX .
N O TES
:
1. C O MF O R MS TO EIA-418.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER .
3. D IM EN SIO N M E ASU R ED
4. INC LU D ES FLAN G E D IST O R TIO N
26.40 (1.039)
24.40 (.961)
4
@ H U B.
3
@
O U TER ED G E.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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