IRL5Y7413CM [INFINEON]
HEXFET POWER MOSFET THRU-HOLE (TO-257AA); HEXFET功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRL5Y7413CM |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总7页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94164A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y7413CM
30V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRL5Y7413CM
30V
0.025Ω 18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
18*
18*
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
72
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±16
230
18
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
2.7
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
08/07/01
IRL5Y7413CM
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
30
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.03
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
1.0
30
—
—
—
—
—
—
—
0.025
0.030
—
Ω
V
= 10V, I = 18A
D
DS(on)
GS
GS
➀
V
= 4.5V, I = 18A
D
V
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
= 10V, I
= 18A ➀
DS
V
DS
I
25
250
= 30V ,V =0V
DSS
DS GS
µA
—
V
= 24V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
79
V
V
= 16V
= -16V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=10V, I = 18A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
9.0
23
V
= 24V
DS
t
t
t
t
20
V
= 15V, I = 18A,
DD
GS
D
130
52
V
=10V, R = 6.2Ω
G
ns
d(off)
f
46
L
+ L
Total Inductance
—
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1670
660
80
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
18*
72
S
A
SM
V
t
1.5
110
300
V
ns
T = 25°C, I = 18A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
nC
V
DD
≤25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRL5Y7413CM
100
10
1
100
10
1
VGS
15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
VGS
15V
10V
TOP
TOP
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
0.0
18A
=
I
D
= 15V
V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
2.5
3.0
3.5
4.0 4.5
5.0
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL5Y7413CM
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 18A
D
GS
V
V
V
= 24V
= 15V
= 6V
C
= C + C
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
0
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
°
T = 25 C
J
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.4
0.8
1.2
1.6
2.0
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRL5Y7413CM
RD
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5Y7413CM
600
500
400
300
200
100
0
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL5Y7413CM
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 18A, di/dt ≤ 140 A/µs,
SD
maximum junction temperature.
V
≤ 30V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 1.4mH
J
DD
Peak I
= 18A, VGS =10V, R = 25Ω
AS
G
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
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7
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