IRLML2502GTRPBF [INFINEON]
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3;
| 型号： | IRLML2502GTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96164
IRLML2803GPbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
D
VDSS = 30V
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
G
RDS(on) = 0.25Ω
S
l Lead-Free
l Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
Micro3™
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint.This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Max.
1.2
Units
A
I
I
I
@ T = 25°C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
@ T = 70°C
A
0.93
7.3
DM
P
@T = 25°C
A
540
mW
Power Dissipation
D
Linear Derating Factor
4.3
±20
mW/°C
V
V
Gate-to-Source Voltage
GS
EAS
3.9
mJ
Single Pulse Avalanche Energy
Peak diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
dv/dt
V/ns
°C
T
T
-55 to + 150
J , STG
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
230
Units
°C/W
RθJA
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1
07/23/08
IRLML2803GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30
0.029 V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.25
0.40
1.0
0.87
1.0
25
-100
100
3.3 5.0
0.48 0.72
1.1 1.7
3.9
4.0
9.0
1.7
85
34
15
VGS = 10V, ID = 0.91A
VGS = 4.5V, ID = 0.46A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0.46A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = 0.91A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
ID = 0.91A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 16Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
0.54
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
7.3
p-n junction diode.
TJ = 25°C, IS = 0.91A, VGS = 0V
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1.2
V
26
22
40
32
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t ≤ 5sec.
ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
ꢀ Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.
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2
IRLML2803GPbF
10
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
1
1
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
J
T
= 150°C
J
A
0.1
A
10
0.1
0.1
1
10
0.1
1
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
I
= 0.91A
D
TJ= 25°C
TJ= 150°C
1
V DS= 10V
20µs PULSE WIDTH
V
= 10V
GS
0.1
3.0
A
A
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML2803GPbF
160
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 0.91A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
V
= 24V
= 15V
DS
DS
140
120
100
80
= C
= C + C
ds
gd
C
C
iss
oss
60
C
rss
40
4
20
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
0.0
A
A
1
10
100
1.0
2.0
3.0
4.0
5.0
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
10µs
100µs
1ms
1
T = 25°C
J
T
T
= 25°C
= 150°C
A
J
10ms
V
GS
= 0V
Single Pulse
A
0.1
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4
IRLML2803GPbF
RD
VDS
Q
G
VGS
10V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML2803GPbF
15V
18
16
14
12
10
8
I
D
TOP
0.57A
0.75A
0.90A
DRIVER
L
V
DS
BOTTOM
D.U.T
AS
R
G
+
-
V
DD
I
A
V
20V
GS
Ω
0.01
t
p
6
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
4
t
p
2
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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6
IRLML2803GPbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
D
MILLIMETERS
INCHES
SYMBOL
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
0.0004
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
e
B
5
A
e1
A2
H
4
C
L1
c
0.10 [0.004]
C
L2
REF
BSC
8
A1
3X
b
3X L
7
0.20 [0.008]
M
C
B A
0
Recommended Footprint
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
0.950
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
2.742
0.802
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
Y = YEAR
W = WEEK
PART NUMBER
A YW LC
LOT
CODE
HALOGEN FREE
INDICATOR
PART NUMBER CODE REFERENCE:
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
Note: A line above the work week
(as shown here) indicates Lead-free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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7
IRLML2803GPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2008
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8
相关型号：
IRLML2502PBF
Ultra Low On-Resistance SOT-23 Footprint N-Channel MOSFET Available in Tape and Reel
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