IRLML5203GPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML5203GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96166
IRLML5203GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
VDSS
-30V
RDS(on) max (mW)
98@VGS = -10V
ID
-3.0A
l
165@VGS = -4.5V
-2.6A
l Halogen-Free
Description
TheseP-channelMOSFETsfromInternationalRectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefitprovidesthedesignerwithanextremelyefficient
device for use in battery and load management
applications.
Micro3TM
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produceaHEXFETPowerMOSFETwiththeindustry's
smallestfootprint.Thispackage,dubbedtheMicro3TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
applicationenvironmentssuchasportableelectronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-30
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.0
-2.4
A
-24
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.80
Linear Derating Factor
10
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
RθJA
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1
07/22/08
IRLML5203GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
98
VGS = -10V, ID = -3.0A
VGS = -4.5V, ID = -2.6A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.0A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
V
DS = -24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
––– 9.5
14
ID = -3.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
nC VDS = -24V
VGS = -10V
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-24
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
––– 17
––– 12
26
18
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRLML5203GPbF
100
10
100
10
1
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
VGS
TOP
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
BOTTOM-2.7V
1
-2.70V
-2.70V
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
3.0A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
=-10V
GS
0.1
2.0
3.0
4.0
5.0 6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML5203GPbF
20
16
12
8
800
I
D
=
-3.0A
V
= 0V,
f = 1MHz
gd , ds
GS
V
V
=-24V
=-15V
C
= C + C
gs
C
SHORTED
DS
DS
iss
C
= C
gd
rss
C
= C + C
ds
oss
gd
600
400
200
0
C
iss
4
C
oss
C
rss
0
0
4
8
12
16
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
°
T = 150 C
J
100us
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.6
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.8
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLML5203GPbF
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML5203GPbF
0.14
0.13
0.12
0.11
0.10
0.40
0.30
0.20
0.10
0.00
V
= -4.5V
GS
I
= -3.0A
0.09
0.08
0.07
D
V
= -10V
GS
4.0
6.0
-V
8.0
10.0
12.0
14.0
16.0
Gate -to -Source Voltage (V)
0
4
8
12
16
GS,
-I , Drain Current (A)
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLML5203GPbF
30
20
10
0
2.5
2.0
1.5
I
= -250µA
D
0.001
0.010
0.100
1.000
10.000
100.000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
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7
IRLML5203GPbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
D
MILLIMETERS
INCHES
SYMBOL
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
0.0004
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
e
B
5
A
e1
A2
H
4
C
L1
c
0.10 [0.004]
C
L2
REF
BSC
8
A1
3X
b
3X L
7
0.20 [0.008]
M
C
B A
0
Recommended Footprint
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
0.950
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
2.742
0.802
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
Y = YEAR
W = WEEK
PART NUMBER
A YW LC
LOT
CODE
HALOGEN FREE
INDICATOR
PART NUMBER CODE REFERENCE:
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
Note: A line above the work week
(as shown here) indicates Lead-free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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IRLML5203GPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2008
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9
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