IRLMS4502 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLMS4502 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93759B
IRLMS4502
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
A
1
2
6
D
D
D
VDSS = -12V
5
D
l Available in Tape & Reel
3
4
G
S
RDS(on) = 0.042Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-5.5
-4.4
A
-44
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.7
W
Power Dissipation
1.1
Linear Derating Factor
0.013
28
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
VGS
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
75
Units
°C/W
RθJA
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1
01/13/03
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.003 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.042
––– ––– 0.075
-0.60 ––– –––
8.8 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -5.5A
GS = -2.5V, ID = -4.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.5A
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 125°C
VGS = -12V
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
––– 22
––– 3.9 5.8
––– 11 16
33
ID = -5.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -10V
VGS = -5.0V
VDD = -6.0V
––– 18 –––
––– 460 –––
––– 130 –––
––– 250 –––
––– 1820 –––
––– 1110 –––
––– 1070 –––
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.5Ω
RD = 6.0Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -10V
ƒ = 1.0kHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-1.7
-44
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.7A, VGS = 0V
––– 31
––– 21
46
32
ns
TJ = 25°C, IF = -5.5A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = -5.5A. (See Figure 12)
2
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IRLMS4502
1000
100
10
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
BOTTOM-2.25V
-2.25V
-2.25V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
°
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
-5.5A
=
I
D
1.5
1.0
0.5
0.0
100
°
T = 25 C
J
°
T = 150 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
=-4.5V
GS
10
2.0
3.0
4.0
5.0 6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLMS4502
2600
15
12
9
V
= 0V,
f = 1 MHZ
I
D
=
-5.5A
GS
C
= C + C
,
C
SHORTED
V =-10V
DS
iss
gs gd
ds
C
= C
rss
gd
C
= C + C
ds gd
oss
2200
1800
1400
1000
Ciss
6
Coss
Crss
3
0
1
10
100
0
10
20
30
40
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
C
J
°
T = 150 C
Single Pulse
10ms
V
= 0 V
GS
1.6
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.8
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLMS4502
80
60
40
20
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I
D
TOP
-2.5A
-4.4A
BOTTOM -5.5A
25
50
75
100
125
150
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
°
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS4502
Micro6 Package Outline
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
2X 0.95 (.0375 )
3.00 (.118 )
-B-
2.80 (.111 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 Tape & Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
6
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IRLMS4502
Micro6 Part Marking Information
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE: THIS IS AN IRLMS6702
WW = (1-26) IF PRECEDED BYLAST DIGIT OF CALENDAR YEAR
WORK
WEEK
YEAR
Y
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
DATE
CODE
TOP
WAF E R L OT
NUMBER CODE
24
25
26
X
Y
Z
BOTTOM
WW = (27-52) IF PRECEDED BYA LETTER
WORK
PART NUMBER CODE REFERENCE:
2A = IRLMS 1902
2B = IRLMS1503
2C = IRLMS6702
2D = IRLMS 5703
2E = IRLMS6802
2F = IRLMS 4502
2G = IRLMS 2002
2H = IRLMS6803
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
DAT E CODE EXAMPLES:
K
50
51
X
Y
YWW = 9603 = 6C
YWW = 9632 = FF
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WEE K
YEAR
Y
W
Y = YEAR
W = WEE K
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IRLMS 1902
B = IRLMS 1503
C = IRLMS 6702
D = IRLMS 5703
E = IRLMS6802
F = IRLMS 4502
G = IR L MS 2002
H = IRLMS6803
W = (27-52) IF PRECEDED BYALETTER
WORK
YEAR
Y
WEE K
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/03
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7
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