IRLR8726TRLPBF [INFINEON]
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK, 3 PIN;
| 型号： | IRLR8726TRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97146A
IRLR8726PbF
IRLU8726PbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS
30V
RDS(on) max
Qg (typ.)
15nC
5.8m @VGS = 10V
D
D
Benefits
S
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
S
D
D
G
G
D-Pak
IRLR8726PbF
I-Pak
IRLU8726PbF
l Lead-Free
l RoHS compliant
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
30
± 20
86
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
61
A
340
75
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
W
D
D
@TC = 100°C
38
Linear Derating Factor
Operating Junction and
0.5
W/°C
°C
T
-55 to + 175
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.0
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
50
°C/W
110
Notes through are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
11/23/09
IRLR/U8726PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
20
––– mV/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
–––
–––
4.0
5.8
5.8
8.0
VGS = 10V, ID = 25A
V
V
GS = 4.5V, ID = 20A
DS = VGS, ID = 50µA
VGS(th)
Gate Threshold Voltage
1.35 1.80 2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
73
-8.6
–––
–––
–––
––– mV/°C
1.0
150
100
µA VDS = 24V, VGS = 0V
V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
––– -100
V
V
GS = -20V
gfs
–––
15
–––
23
S
DS = 15V, ID = 20A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.7
1.9
5.7
3.7
7.6
10
–––
–––
–––
–––
–––
–––
3.5
V
V
DS = 15V
GS = 4.5V
nC
ID = 20A
See Fig. 15
nC
VDS = 15V, VGS = 0V
Ω
Gate Resistance
2.0
12
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
ID = 20A
Rise Time
49
Ω
RG = 1.8
Turn-Off Delay Time
15
ns
See Fig. 13
VGS = 0V
Fall Time
16
Ciss
Coss
Crss
Input Capacitance
––– 2150 –––
Output Capacitance
–––
–––
480
205
–––
–––
pF VDS = 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
120
20
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
86
IS
Continuous Source Current
–––
–––
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
340
integral reverse
p-n junction diode.
(Body Diode)
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
24
1.0
36
78
V
T = 25°C, I = 20A, V = 0V
J S GS
ns T = 25°C, I = 20A, VDD = 15V
J
F
Qrr
Reverse Recovery Charge
52
nC di/dt = 300A/µs
2
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IRLR/U8726PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
≤
2.5V
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
1000
100
10
I
= 25A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 15V
DS
≤ 60µs PULSE WIDTH
0.1
0.0
2.0
4.0
6.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRLR/U8726PbF
10000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I = 20A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
DS
DS
C
= C
rss
gd
C
= C + C
ds
oss
gd
Ciss
6
1000
Coss
Crss
4
2
0
100
0
4
8
12 16 20 24 28 32 36 40
Total Gate Charge (nC)
1
10
100
Q
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
T = 25°C
C
1
T = 175°C
J
V
= 0V
Single Pulse
GS
0.1
0.1
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR/U8726PbF
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
LIMITED BY PACKAGE
I
I
I
= 500µA
= 50µA
= 25µA
D
D
D
25
50
75
100
125
150
175
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
T
, Case Temperature (°C)
C
T
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
1
0.1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
τι
(sec)
Ri (°C/W)
0.05
0.02
τJ
0.014297 0.000003
0.373312 0.00009
1.010326 0.000973
0.602065 0.007272
τC
τJ
τ1
τ
τ
2 τ2
τ
3 τ3
τ4
τ1
τ4
0.01
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U8726PbF
500
I
D
TOP
5.6A
8.2A
400
300
200
100
BOTTOM 20A
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
+
-
G
V
DD
I
A
2VGS
Ω
0.01
t
p
I
AS
Fig 12c. Unclamped Inductive Waveforms
Fig 12b. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 13b. Switching Time Waveforms
Fig 13a. Switching Time Test Circuit
6
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IRLR/U8726PbF
Driver Gate Drive
P.W.
Period
D.U.T
Period
D =
P.W.
+
-
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16. Gate Charge Waveform
Fig 15. Gate Charge Test Circuit
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7
IRLR/U8726PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8726PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRLR/U8726PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8726PbF
Orderable part number Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
75
IRLR8726PBF
IRLR8726TRPBF
D-PAK
D-PAK
Tape and Reel
2000
IRLU8726PBF
I-PAK
Tube/Bulk
75
Qualification information†
D-PAK
Consumer††
MS L1
Qualification level
Moisture Sensitivity Level
RoHS compliant
I-PAK
(per JEDEC J-S T D-020D†††
)
Yes
Qualification level
Industrial
Not applicable
Yes
Moisture Sensitivity Level
RoHS compliant
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.605mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 50A.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately at 90°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
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11
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