IRLR8729PBF_09 [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET![IRLR8729PBF_09](http://pdffile.icpdf.com/pdf1/p00140/img/icpdf/IRLR8_772876_icpdf.jpg)
型号: | IRLR8729PBF_09 |
厂家: | ![]() |
描述: | HEXFETPower MOSFET |
文件: | 总11页 (文件大小:348K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
PD - 97352B
IRLR8729PbF
IRLU8729PbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS RDS(on) max
Qg
10nC
8.9m
Ω
30V
D
Benefits
S
S
D
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
G
G
D-Pak
IRLR8729PbF
I-Pak
IRLU8729PbF
l Lead-Free
l RoHS compliant
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
± 20
58
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
41
A
260
55
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
@TC = 100°C
W
D
D
27
Linear Derating Factor
Operating Junction and
0.37
-55 to + 175
W/°C
°C
T
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.73
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mount)
°C/W
Junction-to-Ambient
110
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through ꢀ are on page 11
www.irf.com
1
11/23/09
IRLR/U8729PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
91
–––
–––
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
∆
V
DSS/ TJ
21
––– mV/°C Reference to 25°C, ID = 1mA
6.0
8.9
1.8
-6.2
–––
–––
–––
8.9
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
Ω
m
11.9
2.35
VGS(th)
V
VDS = VGS, ID = 25µA
Gate Threshold Voltage
∆
V
∆
GS(th)/ TJ
––– mV/°C
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IDSS
1.0
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
150
IGSS
100
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
VGS = -20V
gfs
Qg
–––
10
–––
16
S
VDS = 15V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
Qgs1
2.1
1.3
4.0
2.6
4.8
6.3
–––
–––
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Qgs2
Qgd
nC
ID = 20A
Qgodr
See Fig. 16
Qsw
Qoss
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
–––
–––
–––
–––
–––
1.6
10
47
11
10
2.7
–––
–––
–––
–––
Ω
VDD = 15V, VGS = 4.5V
ID = 20A
Turn-On Delay Time
Rise Time
ns
td(off)
tf
R
G = 1.8Ω
See Fig. 14
VGS = 0V
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
––– 1350 –––
Input Capacitance
–––
–––
280
120
–––
–––
VDS = 15V
pF
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
Units
mJ
A
EAS
74
20
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
5.5
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
–––
–––
MOSFET symbol
Continuous Source Current
58
(Body Diode)
showing the
integral reverse
A
ISM
–––
–––
Pulsed Source Current
260
(Body Diode)
p-n junction diode.
VSD
–––
–––
–––
–––
16
1.0
24
29
V
T = 25°C, I = 20A, V = 0V
J S GS
Diode Forward Voltage
trr
ns T = 25°C, I = 20A, VDD = 15V
Reverse Recovery Time
J
F
Qrr
di/dt = 300A/µs
19
nC
Reverse Recovery Charge
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
2
www.irf.com
IRLR/U8729PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
1
60µs PULSE WIDTH
Tj = 25°C
≤
2.5V
60µs PULSE WIDTH
Tj = 175°C
≤
2.5V
V
0.1
1
0.1
1
10
100
0.1
1
10
100
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I
= 25A
D
V
= 10V
GS
100
10
1
1.5
1.0
0.5
T
= 175°C
J
T
= 25°C
V
J
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRLR/U8729PbF
5.0
4.0
3.0
2.0
1.0
0.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
= 24V
= 15V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
1000
C
oss
C
rss
100
0
2
4
6
8
10
12
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 175°C
J
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRLR/U8729PbF
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
Limited By Package
I
I
I
= 25µA
= 50µA
= 100µA
D
D
D
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
T
, Case Temperature (°C)
T
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
0.02
0.01
τ
J τJ
CτC
1.251
0.000513
τ
τ
1 τ1
2 τ2
1.481
0.004337
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U8729PbF
300
250
200
150
100
50
15V
I
D
TOP
4.4A
6.5A
BOTTOM 20A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
VGS
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
RD
AS
VDS
Fig 12b. Unclamped Inductive Waveforms
VGS
D.U.T.
RG
+VDD
-
Current Regulator
Same Type as D.U.T.
VGS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
.2µF
Fig 14a. Switching Time Test Circuit
12V
.3µF
+
V
DS
V
DS
D.U.T.
-
90%
V
GS
3mA
10%
V
I
I
GS
G
D
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 14b. Switching Time Waveforms
Fig 13. Gate Charge Test Circuit
6
www.irf.com
IRLR/U8729PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
+
V
=10V
GS
D.U.T
-
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
• Low Leakage Inductance
Current Transformer
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
+
• dv/dt controlled by RG
V
Body Diode
Forward Drop
DD
RG
• Driver same type as D.U.T.
Inductor Curent
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16. Gate Charge Waveform
www.irf.com
7
IRLR/U8729PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRLR/U8729PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRLR/U8729PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRLR/U8729PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Tape and
Reel
Quantity
75
2000
IRLR8729PBF
IRLR8729TRPBF
D-PAK
D-PAK
IRLU8729PBF
I-PAK
Tube/Bulk
75
Qualification information†
D-PAK
Consumer††
MS L1
(per JEDEC J-S T D-020D†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
I-PAK
)
Yes
Qualification level
Industrial
Not applicable
Yes
Moisture Sensitivity Level
RoHS compliant
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 50A.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
www.irf.com
11
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00306/img/page/IRLU8729-701_1843012_files/IRLU8729-701_1843012_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00306/img/page/IRLU8729-701_1843012_files/IRLU8729-701_1843012_2.jpg)
IRLR8729TRRPBF
Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IRLR8743_2227901_files/IRLR8743_2227901_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00364/img/page/IRLR8743_2227901_files/IRLR8743_2227901_2.jpg)
IRLR8743
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00305/img/page/IRLR8743TRPB_1841675_files/IRLR8743TRPB_1841675_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00305/img/page/IRLR8743TRPB_1841675_files/IRLR8743TRPB_1841675_2.jpg)
IRLR8743TRPBF
Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明