IRLR8729TRPBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRLR8729TRPBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总11页 (文件大小：356K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 97352A

IRLR8729PbF

IRLU8729PbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

V_DSSR_DS(on)max

10nC

8.9m

30V

Ω

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRLR8729PbF

I-Pak

IRLU8729PbF

l Lead-Free

l RoHS compliant

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

260

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.37

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.73

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

°C/W

Junction-to-Ambient

110

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through ꢀ are on page 11

www.irf.com

12/16/08

IRLR/U8729PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

BV_DSS

–––

1.35

–––

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

∆ΒV_DSS/∆T_J

R_DS(on)

––– mV/°C Reference to 25°C, I_D= 1mA

6.0

8.9

1.8

-6.2

–––

8.9

V_GS= 10V, I_D= 25A

V_GS= 4.5V, I_D= 20A

V_DS= V_GS, I_D= 25µA

mΩ

11.9

2.35

V_GS(th)

Gate Threshold Voltage

∆V_GS(th)/∆T_J

I_DSS

––– mV/°C

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

1.0

µA

V_DS= 24V, V_GS= 0V

150

V_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

100

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

––– -100

V_GS= -20V

gfs

Q_g

–––

V_DS= 15V, I_D= 20A

–––

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

2.1

1.3

4.0

2.6

4.8

6.3

–––

V_DS= 15V

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

nC V_GS= 4.5V

I_D= 20A

See Fig. 16

nC V_DS= 16V, V_GS= 0V

R_G

t_d(on)

Gate Resistance

–––

1.6

2.7

–––

Ω

_DD= 15V, V_GS= 4.5V

Turn-On Delay Time

t_r

I_D= 20A

Rise Time

t_d(off)

t_f

R_G= 1.8Ω

See Fig. 14

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

––– 1350 –––

V_GS= 0V

Input Capacitance

–––

280

120

–––

V_DS= 15V

Output Capacitance

ƒ = 1.0MHz

Reverse Transfer Capacitance

Avalanche Characteristics

Parameter

Typ.

–––

Max.

Units

E_AS

Single Pulse Avalanche Energy

I_AR

Avalanche Current

E_AR

5.5

Repetitive Avalanche Energy

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

–––

MOSFET symbol

Continuous Source Current

(Body Diode)

showing the

integral reverse

I_SM

–––

Pulsed Source Current

260

(Body Diode)

p-n junction diode.

V_SD

–––

1.0

T = 25°C, I = 20A, V = 0V

Diode Forward Voltage

J S GS

t_rr

ns T = 25°C, I = 20A, V_DD= 15V

Reverse Recovery Time

Q_rr

di/dt = 300A/µs

Reverse Recovery Charge

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Forward Turn-On Time

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IRLR/U8729PbF

1000

100

1000

100

VGS

10V

VGS

10V

TOP

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

2.5V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

2.5V

BOTTOM

60µs PULSE WIDTH

Tj = 25°C

≤

2.5V

60µs PULSE WIDTH

Tj = 175°C

≤

2.5V

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

= 25A

= 10V

100

1.5

1.0

0.5

= 175°C

= 25°C

= 15V

≤

60µs PULSE WIDTH

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

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IRLR/U8729PbF

5.0

4.0

3.0

2.0

1.0

0.0

10000

= 0V,

= C

f = 1 MHZ

I = 20A

+ C , C

SHORTED

iss

= 24V

= 15V

= C

rss

oss

= C + C

iss

1000

oss

rss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

100µsec

1msec

100

= 175°C

10msec

= 25°C

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

100

0.0

0.5

1.0

1.5

2.0

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLR/U8729PbF

2.5

2.0

1.5

1.0

0.5

Limited By Package

= 25µA

= 50µA

= 100µA

100

125

150

175

-75 -50 -25

25 50 75 100 125 150 175 200

, Temperature ( °C )

, Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Fig 10. Threshold Voltage vs. Temperature

Case Temperature

D = 0.50

0.1

0.20

0.10

0.05

R₁

R₂

Ri (°C/W) τi (sec)

0.02

0.01

^Jτ_J

^Cτ_C

1.251

0.000513

¹τ₁

²τ₂

1.481

0.004337

Ci= τi/Ri

Ci = τi/Ri

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR/U8729PbF

300

250

200

150

100

15V

TOP

4.4A

6.5A

BOTTOM 20A

DRIVER

D.U.T

20V

0.01

Ω

V_GS

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

R_D

V_DS

Fig 12b. Unclamped Inductive Waveforms

V_GS

D.U.T.

R_G

⁺V_DD

Current Regulator

Same Type as D.U.T.

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

50KΩ

.2µF

Fig 14a. Switching Time Test Circuit

12V

.3µF

D.U.T.

90%

3mA

10%

Current Sampling Resistors

d(on)

d(off)

Fig 14b. Switching Time Waveforms

Fig 13. Gate Charge Test Circuit

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IRLR/U8729PbF

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

D.U.T. I Waveform

Reverse

Recovery

Current

• Low Leakage Inductance

Current Transformer

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

• dv/dt controlled by R_G

Body Diode

Forward Drop

R_G

• Driver same type as D.U.T.

Inductor Curent

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgodr

Qgd

Fig 16. Gate Charge Waveform

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IRLR/U8729PbF

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRLR/U8729PbF

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRLR/U8729PbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRLR/U8729PbF

Orderable part number

Package Type

Standard Pack

Note

Form

Tube/Bulk

Tape and

Reel

Quantity

2000

IRLR8729PBF

IRLR8729TRPBF

D-PAK

IRLU8729PBF

I-PAK

Tube/Bulk

Qualification information

†

Qualification level

Industrial††

(per JEDEC JESD47F††† guidelines)

Comments: This family of products has passed JEDEC’s Industrial

qualification. IR’s Consumer qualification level is granted by

extension of the higher Industrial level.

Moisture Sensitivity

Level

D-PAK

MS L 1

†††

(per JEDEC J-S T D-020D

Not applicabl e

)

I-PAK

RoHS compliant

Yes

†

Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability

†† Higher qualification ratings may be available should the user have such requirements. Please contact

your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/

††† Applicable version of JEDEC standard at the time of product release.

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.37mH, R_G= 25Ω, I_AS= 20A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Calculated continuous current based on maximum allowable junction temperature. Package limitation

current is 50A.

ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques

refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/08

www.irf.com

IRLR8729TRPBF [INFINEON]

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