IRLR8729PBF-1_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRLR8729PBF-1_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总10页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLR8729PbF-1
HEXFET® Power MOSFET
VDS
30
8.9
10
V
D
D
RDS(on) max
(@VGS = 10V)
Qg (typical)
m
Ω
S
nC
A
G
G
ID
58
D-Pak
IRLR8729PbF-1
S
(@TC = 25°C)
Features
Benefits
Industry-standard pinout D-Pak and I-Pak
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tape and Reel
Tape and Reel Left
2000
3000
IRLR8729TRPbF-1
IRLR8729TRLPbF-1
D-Pak
IRLR8729PbF-1
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
30
± 20
58
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TC = 25°C
@ TC = 100°C
D
D
41
A
260
55
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
@TC = 100°C
W
D
D
27
Linear Derating Factor
Operating Junction and
0.37
-55 to + 175
W/°C
°C
T
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.73
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mount)
°C/W
Junction-to-Ambient
110
1
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IRLR8729PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
BVDSS
ΔΒ
RDS(on)
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
91
–––
–––
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Δ
VDSS/ TJ
21
––– mV/°C Reference to 25°C, ID = 1mA
6.0
8.9
1.8
-6.2
–––
–––
–––
8.9
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
Ω
m
11.9
2.35
VGS(th)
V
VDS = VGS, ID = 25μA
Gate Threshold Voltage
Δ
Δ
VGS(th)/ TJ
––– mV/°C
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IDSS
1.0
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
150
IGSS
100
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
VGS = -20V
gfs
Qg
–––
10
–––
16
S
VDS = 15V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
Qgs1
2.1
1.3
4.0
2.6
4.8
6.3
–––
–––
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Qgs2
Qgd
nC
ID = 20A
Qgodr
See Fig. 16
Qsw
Qoss
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
–––
–––
–––
–––
–––
1.6
10
47
11
10
2.7
–––
–––
–––
–––
Ω
VDD = 15V, VGS = 4.5V
ID = 20A
Turn-On Delay Time
Rise Time
ns
td(off)
tf
R
G = 1.8Ω
See Fig. 14
VGS = 0V
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
––– 1350 –––
Input Capacitance
–––
–––
280
120
–––
–––
VDS = 15V
pF
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
Units
mJ
A
EAS
74
20
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
5.5
mJ
Repetitive Avalanche Energy
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
–––
–––
MOSFET symbol
Continuous Source Current
58
(Body Diode)
showing the
integral reverse
A
ISM
–––
–––
Pulsed Source Current
260
(Body Diode)
p-n junction diode.
VSD
–––
–––
–––
–––
16
1.0
24
29
V
T = 25°C, I = 20A, V = 0V
J S GS
Diode Forward Voltage
trr
ns T = 25°C, I = 20A, VDD = 15V
Reverse Recovery Time
J
F
Qrr
di/dt = 300A/μs
19
nC
Reverse Recovery Charge
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
2
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IRLR8729PbF-1
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
1
60μs PULSE WIDTH
Tj = 25°C
≤
2.5V
60μs PULSE WIDTH
Tj = 175°C
≤
2.5V
V
0.1
1
0.1
1
10
100
0.1
1
10
100
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I
= 25A
D
V
= 10V
GS
100
10
1
1.5
1.0
0.5
T
= 175°C
J
T
= 25°C
V
J
= 15V
DS
≤
60μs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
3
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June 29, 2014
IRLR8729PbF-1
5.0
4.0
3.0
2.0
1.0
0.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
= 24V
= 15V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
= 175°C
J
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLR8729PbF-1
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
Limited By Package
I
I
I
= 25μA
= 50μA
D
D
D
= 100μA
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150175 200
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
0.02
0.01
τ
J τJ
CτC
1.251
0.000513
τ
τ
1 τ1
2 τ2
1.481
0.004337
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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IRLR8729PbF-1
300
250
200
150
100
50
15V
I
D
TOP
4.4A
6.5A
BOTTOM 20A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
VGS
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
RD
AS
VDS
Fig 12b. Unclamped Inductive Waveforms
VGS
D.U.T.
RG
+VDD
-
Current Regulator
Same Type as D.U.T.
VGS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
.2μF
Fig 14a. Switching Time Test Circuit
12V
.3μF
+
V
DS
V
DS
D.U.T.
-
90%
V
GS
3mA
10%
V
I
I
GS
G
D
Current Sampling Resistors
t
t
r
t
t
f
d(on)
d(off)
Fig 14b. Switching Time Waveforms
Fig 13. Gate Charge Test Circuit
6
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IRLR8729PbF-1
Driver Gate Drive
P.W.
P.W.
D =
Period
Period
+
V
=10V
GS
D.U.T
-
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
• Low Leakage Inductance
Current Transformer
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
+
• dv/dt controlled by RG
V
Body Diode
Forward Drop
DD
RG
• Driver same type as D.U.T.
Inductor Curent
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16. Gate Charge Waveform
7
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IRLR8729PbF-1
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S EMB LY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WE EK 16
IRFR120
116A
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "Lead-Free"
"P" in assembly line position indicates
"Lead-Free" qualification to the cons umer-level
PART NUMBER
DATE CODE
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
LOGO
P = DE S IGNAT E S LE AD-F RE E
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S EMB LY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = AS S E MBL Y S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
June 29, 2014
IRLR8729PbF-1
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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June 29, 2014
IRLR8729PbF-1
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
D-Pak
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 50A.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques
refer to application note #AN-994.
Revision History
Date
Comment
•
6/27/2014
Orderable table removed Tube option and add TRL option on page1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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June 29, 2014
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