IRSF3031 [INFINEON]
FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm); 充分保护DMOS电源开关（ VDS = 50V ， RDS（ON） = 200mohm ）
| 型号： | IRSF3031 |
| 厂家： | 
Infineon |
| 描述： | FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm) |
| 文件： | 总5页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD 6.069A
IRSF3031
FULLY PROTECTED DMOS POWER SWITCH
Features
■ Extremely Rugged for Harsh Operating Environments
■ Over Temperature Protection
■ Over Current Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
V
R
50 V
ds(clamp)
200 mΩ
1.8 A
165oC
ds(on)
ds(sd)
I
T
j(sd)
AS
■ Dual Set/Reset Threshold Input
E
200 mJ
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOS-
FET with built-in short circuit, over-temperature, ESD and over-voltage
protections and dual set/reset threshold input.
Applications
■
■
Solenoid Driver
DC Motor Driver
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 4A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the input is driven below the
Reset Threshold voltage. The drain-to-source voltage is actively
clamped at 55V (typical) prior to the avalanche of the power MOSFET,
thus improving its performance during turn-off with inductive loads.
Available Packages
IRSF3031
(TO-220AB)
The input requirements are very low (100µA typical) which makes the
IRSF3031 compatible with most existing designs based on standard
power MOSFETs.
IRSF3031L
(SOT-223)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwisespecified.)
Minimum Maximum Units Test Conditions
V
V
Continuous Drain to Source Voltage
Continuous Input Voltage
50
ds, max
V
0
8
in, max
I
Continuous Drain Current
-40
-40
self limited
30
ds
P
E
V
V
Power Dissipation
W
T ≤ 25°C
c
d
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
Electrostatic Discharge Voltage (Machine Model)
Operating Junction Temperature Range
Storage Temperature Range
200
mJ
AS
4000
1000
150
1000pF. 1.5kΩ
200pF, 0Ω
esd1
esd2
V
T
T
T
Jop
Stg
L
150
°C
Lead Temperature (Soldering, 10 seconds)
300
To Order
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IRSF3031
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
V
R
Drain to Source Clamp Voltage
Drain to Source On Resistance
Drain to Source Leakage Current
Input Threshold Voltage
Input Protection Reset Threshold Voltage
Input Supply Current (Normal Operation)
Input Supply Current (Protection Mode)
Input Clamp Voltage
50
2.5
0.5
9
56
155
3.2
1.0
100
120
10
65
200
250
4.0
1.5
300
400
V
mΩ
µA
V
I
V
V
V
V
V
V
= 2A
ds,clamp
ds(on)
ds
in
ds
ds
ds
in
in
= 5V, I = 2A
= 40V, V = 0V
in
= 5V, I > 10mA
ds
ds
I
dss
V
V
set
V
= 5V, I < 10µA
reset
i,on
i,off
ds
I
I
µA
µA
V
= 5V
= 5V
V
V
I = 10mA
in
in, clamp
sd
Body-Drain Diode Forward Drop
1.5
V
I = -2A, R = 1kΩ
ds in
ThermalCharacteristics
Minimum Typical Maximum Units Test Conditions
RΘ
RΘ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4
jc
°C/W
62
jA
SwitchingElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10Ω, Rin= 100Ω. Typical specifications measured at TC= 25°C. Min/max specifica-
tions are for TC = -40°C to TC=125°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
t
t
t
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Output Positive Slew Rate
Output Positive Slew Rate
-5
-5
30
30
30
30
5
V
V
V
V
V
V
= 2V to 5V, 50% to 90%
= 2V to 5V, 90% to 10%
= 2V to 5V, 50% to 10%
= 2V to 5V, 10% to 90%
= 2V to 5V, +dVds/dt
= 2V to 5V, -dVds/dt
don
in
in
in
in
in
in
r
µs
doff
f
SR
SR
V/µs
5
Protection Characteristics
(TC= 25 °C unless otherwise specified. Min/Max specifications are for TC= -40°C to TC = +125°C unless otherwise
specified.)
Minimum Typical Maximum Units Test Conditions
I
T
V
t
I
t
t
Current Limit
1.8
155
4
165
3
6
A
°C
V
Vin = 5V
Vin = 5V, Ids = 2A
ds(sd)
Over Temperature Shutdown Threshold
Min. Input Voltage for Over-temp function
Over Current Response Time
Peak Short Circuit Current
Protection Reset Time
Over-Temperature Response Time
j(sd)
protect
Iresp
peak
reset
TBD
TBD
TBD
TBD
µs
A
µs
Tresp
To Order
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IRSF3031
Drain
BlockDiagram
Input
Source
Case Outline SOT-223 (IRSF3031L)
MILLIMETERS
INCHES
DIM
A
B
B1
C
D
MIN
MAX
1.80
0.85
3.15
0.35
6.70
3.70
MIN
MAX
0.071
0.033
0.124
0.014
0.264
0.146
1.55
0.65
2.95
0.25
6.30
3.30
0.061
0.026
0.116
0.010
0.248
0.130
E
e
e1
H
L
L1
Θ
2.30 BSC
4.60 BSC
.0905 BSC
0.181 BSC
6.71
—
0.02
7.29
0.91
0.10
0.287
—
0.0006
0.264
0.036
0.004
10° MAX
10° MAX
LEADASSIGNMENTS
1. Gate
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions do not include lead flash
4. Conforms to JEDEC outline TO-261AA
2. Drain
3. Source
4. Drain
To Order
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IRSF3031
Tape and Reel SOT-223 (IRSF3031L)
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481 and EIA-541
3. Each 330.00 (13.00) reel contains 2,500 devices.
NOTES:
1. Controlling dimension: MILLIMETER
2. Conforms to outline EIA-481-1
3. Dimension measured at hub
4. Includes flange distortion at outer edge
To Order
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IRSF3031
Case Outline TO-220AB (IRSF3031)
LEADASSIGNMENTS
NOTES:
1. Gate
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
2. Drain
3. Source
4. Drain
3. Dimensions shown are in millimeters (inches)
4. Conforms to JEDEC outline TO-251AA
5. Dimension does not include solder dip. Solder dip max. +0.16 (.006)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/96
To Order
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