IRU3005CW-TRPBF [INFINEON]

Switching Controller, 250kHz Switching Freq-Max, PDSO20, PLASTIC, SOIC-20;
IRU3005CW-TRPBF
型号: IRU3005CW-TRPBF
厂家: Infineon    Infineon
描述:

Switching Controller, 250kHz Switching Freq-Max, PDSO20, PLASTIC, SOIC-20

光电二极管
文件: 总14页 (文件大小:83K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IRU3004, IRU3005  
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK  
CONTROLLER IC WITH DUAL LDO CONTROLLER  
FEATURES  
DESCRIPTION  
The IRU3004/IRU3005 series of controller ICs are spe-  
cifically designed to meet Intel specifications for Pentium  
IIIä microprocessor applications as well as the next  
generation P6 family processors. The IC provides a single  
chip controller IC for the Vcore, GTL+ and clock sup-  
plies required for the Pentium III applications. These  
devices feature a patented topology, that in combina-  
tion with a few external components as shown in the  
typical application circuit, will provide in excess of 20A  
of output current for an on-board DC-DC converter while  
automatically providing the right output voltage via the  
five-bit internal DAC meeting the latest VRM specifica-  
tion. These products also feature loss-lesscurrent sens-  
Meets latest VRM 8.4 specification for PIII  
Provides single chip solution for Vcore, GTL+ and  
clock supply  
On-board DAC programs the output voltage from  
1.3V to 3.5V. The IRU3004/IRU3005 remains on for  
VID code of (11111).  
Dual linear regulator controller on-board for 1.5V  
GTL+ and 2.5V clock supplies  
Loss-less short circuit protection  
Synchronous operation allows maximum efficiency  
Patented architecture allows fixed frequency opera-  
tion as well as 100% duty cycle during dynamic  
load  
ing by using the R  
of the high side power MOSFET  
Minimum part count. No external compensation.  
Soft start  
High current totem pole driver for direct driving of the  
external power MOSFET  
DS(on)  
as the sensing resistor and a Power Good window com-  
parator that switches its open collector output low when  
the output is outside of a ±10% window. Other features  
of the device are: Undervoltage lockout for both 5V and  
12V supplies, an external programmable soft start func-  
tion as well as programming the oscillator frequency by  
using an external capacitor.  
Power Good function  
APPLICATIONS  
Pentium III & next generation processor DC to DC  
converter application  
Low cost Pentium with AGP  
TYPICAL APPLICATION  
L1  
L2  
Q1  
5V  
Vout 3  
R16  
R17  
C16  
C5  
R1  
C7  
R4  
Q2  
C13  
C3  
C4  
C10  
R2  
R3  
R12  
R13  
3.3V  
12V  
C6  
Q3  
Vout 1  
Vout 2  
C11  
R18  
12  
V12  
5
V5  
8
CS+  
9
7
CS-  
11  
10  
Gnd  
14  
Vfb3  
R7  
R8  
HDrv  
LDrv  
R11  
C15  
1
Ct  
Lin1 2  
C1  
IRU3004  
13 SS  
D4  
Vfb1  
Lin2  
3
Q4  
C2  
D3  
16  
D2  
17  
D1  
18  
D0  
19  
PGd  
6
Vfb2  
4
15  
20  
C9  
C12  
R14  
R15  
VID4  
3004app2-2.0  
VID3  
VID2  
VID1  
VID0  
R9  
3.3V  
C14  
R5  
PowerGood  
C8  
Notes: Pentium III is trademark of Intel Corp.  
PACKAGE ORDER INFORMATION  
Ta (°C)  
0 TO 70  
0 TO 70  
Device  
IRU3004CW  
IRU3005CW  
Package  
20-pin Plastic SOIC WB  
20-pin Plastic SOIC WB  
2.5V Output Voltage  
Adjustable  
Fixed  
Rev. 1.2  
12/8/00  
4-3  
IRU3004, IRU3005  
ABSOLUTE MAXIMUM RATINGS  
V5 supply Voltage ................................................. 10V  
V12 Supply Voltage ................................................. 20V  
Storage Temperature Range ...................................... -65 TO 150°C  
Operating Junction Temperature Range ...................... 0 TO 125°C  
PACKAGE INFORMATION  
20-PIN WIDE BODY PLASTIC SOIC (W)  
TOP VIEW  
1
2
3
4
5
6
7
8
9
20  
19  
18  
17  
16  
Ct / En  
Lin1  
Vfb1  
Vfb2  
V5  
Lin2  
D0  
D1  
D2  
D3  
PGd  
CS-  
15 D4  
14 Vfb3  
13 SS  
CS+  
HDrv  
12 V12  
11 LDrv  
Gnd 10  
qJA=85°C/W  
ELECTRICAL SPECIFICATIONS  
Unless otherwise specified, these specifications apply over,V12 = 12V, V5 = 5V and Ta=0 to 70°C. Typical values  
refer to Ta =25°C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the  
ambient temperature.  
PARAMETER  
SYM  
TEST CONDITION  
MIN  
TYP  
MAX  
UNITS  
VID Section  
DAC output voltage  
0.99Vs  
Vs  
1.01Vs  
V
(note 1)  
DAC Output Line Regulation  
DAC Output Temp Variation  
VID Input LO  
0.1  
0.5  
0.4  
%
%
V
VID Input HI  
2
V
VID input internal pull-up  
resistor to V5  
27  
kW  
Power Good Section  
Under voltage lower trip point  
Under voltage upper trip point  
UV Hysterises  
Vout ramping down  
Vout ramping up  
0.89Vs  
0.90Vs  
0.92Vs  
.02Vs  
0.91Vs  
V
V
V
V
V
V
V
V
.015Vs  
1.09Vs  
.025Vs  
1.11Vs  
Over voltage upper trip point  
Over voltage lower trip point  
OV Hysterises  
Vout ramping up  
1.10Vs  
1.08Vs  
.02Vs  
Vout ramping down  
.015Vs  
4.8  
.025Vs  
0.4  
Power Good Output LO  
Power Good Output HI  
Soft Start Section  
Soft Start Current  
RL=3mA  
RL=5K pull up to 5V  
CS+ =0V, CS- =5V  
10  
mA  
Rev. 1.2  
12/8/00  
4-4  
IRU3004, IRU3005  
PARAMETER  
UVLO Section  
SYM  
TEST CONDITION  
Supply ramping up  
Supply ramping up  
MIN  
TYP  
MAX  
UNITS  
UVLO Threshold-12V  
UVLO Hysterises-12V  
UVLO Threshold-5V  
UVLO Hysterises-5V  
Error Comparator Section  
Input bias current  
9.2  
0.3  
4.1  
0.2  
10  
10.8  
0.5  
4.5  
0.4  
V
V
V
V
0.4  
4.3  
0.3  
2
+2  
100  
mA  
mV  
nS  
Input Offset Voltage  
Delay to Output  
-2  
Vdiff=10mV  
Current Limit Section  
C.S Threshold Set Current  
C.S Comp Offset Voltage  
Hiccup Duty Cycle  
Supply Current  
160  
-5  
200  
240  
+5  
2
mA  
mV  
%
Css=0.1mF  
Operating Supply Current  
CL=3000pF  
V5  
20  
14  
V12  
mA  
Output Drivers Section  
Rise Time  
Fall Time  
Dead Band Time  
Oscillator Section  
Osc Frequency  
Osc Valley  
CL=3000pF  
CL=3000pF  
CL=3000pF  
70  
70  
200  
100  
130  
300  
nS  
nS  
nS  
100  
190  
Ct=150pF  
220  
V5  
250  
0.2  
Khz  
V
Osc Peak  
V
LDO Controller Section  
Vfb1 & Vfb2 (IRU3004)  
Vfb2 (IRU3005)  
Vfb1 (IRU3005)  
Input bias current  
Lin1 or Lin2 Drive Current  
1.477  
1.500  
2.500  
50  
1.522  
2
V
V
mA  
mA  
Note 1: Vs refers to the set point voltage given in Table 1.  
D4  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
D3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs  
1.30  
1.35  
1.40  
1.45  
1.50  
1.55  
1.60  
1.65  
1.70  
1.75  
1.80  
1.85  
1.90  
1.95  
2.00  
2.05  
D4  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
D3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1  
D0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
Table 1 - Set point voltage vs. VID codes  
Rev. 1.2  
12/8/00  
4-5  
IRU3004, IRU3005  
PIN DESCRIPTIONS  
PIN# PIN SYMBOL  
PIN DESCRIPTION  
19  
18  
17  
16  
15  
6
D0  
D1  
LSB input to the DAC that programs the output voltage. This pin can be pulled up  
externally by a 10k resistor to either 3.3V or 5V supply.  
Input to the DAC that programs the output voltage. This pin can be pulled up externally  
by a 10kW resistor to either 3.3V or 5V supply.  
D2  
Input to the DAC that programs the output voltage. This pin can be pulled up externally  
by a 10k resistor to either 3.3V or 5V supply.  
D3  
MSB input to the DAC that programs the output voltage. This pin can be pulled up  
externally by a 10k resistor to either 3.3V or 5V supply.  
D4  
This pin selects a range of output voltages for the DAC. When in the LOW state the  
range is 1.3V to 2.05V. For VID codes of all "1" the IRU3004 keeps all the outputs on.  
PGd  
This pin is an open collector output that switches LO when the output of the con-  
verter is not within ±10% (typ) of the nominal output voltage. When PWRGD pin switches  
LO the sat voltage is less than 0.4V at 3mA.  
14  
8
Vfb3  
CS+  
This pin is connected directly to the output of the Core supply to provide feedback to the  
Error comparator.  
This pin is connected to the Drain of the power MOSFET of the Core supply and it  
provides the positive sensing for the internal current sensing circuitry. An external resis  
tor programs the C.S threshold depending on the R  
of the power MOSFET. An  
DS  
external capacitor is placed in parallel with the programming resistor to provide high  
frequency noise filtering.  
7
CS-  
SS  
This pin is connected to the Source of the power MOSFET for the Core supply and it  
provides the negative sensing for the internal current sensing circuitry.  
13  
This pin provides the soft start for the switching regulator. An internal current source  
charges an external capacitor that is connected from this pin to the GND which ramps  
up the outputs of the switching regulator, preventing the outputs from overshooting as  
well as limiting the input current. The second function of the Soft Start cap is to provide  
long off time (HICCUP) for the synchronous MOSFET during current limiting.  
1
2
Ct  
This pin programs the oscillator frequency in the range of 50kHZ to 500kHZ with an  
external capacitor connected from this pin to the GND.  
Lin1  
Vfb1  
Lin2  
This pin controls the gate of an external transistor for either the GTL+ linear regulator or  
Clock supply.  
3
This pin provides the feedback for the linear regulator that its output drive is Lin1 pin. For  
IRU3005, this pin is connected to the 2.5V regulator, eliminating the external dividers.  
20  
This pin controls the gate of an external transistor for either the GTL+ linear regulator or  
Clock supply.  
4
Vfb2  
Gnd  
This pin provides the feedback for the linear regulator that its output drive is Lin2 pin.  
10  
This pin serves as the ground pin and must be connected directly to the ground plane.  
A high frequency capacitor (0.1 to 1mF) must be connected from V5 and V12 pins to  
this pin for noise free operation.  
11  
9
LDrv  
HDrv  
V12  
Output driver for the synchronous power MOSFET.  
Output driver for the high-side power MOSFET.  
12  
This pin is connected to the 12 V supply and serves as the power Vcc pin for the output  
drivers. A high frequency capacitor (0.1 to 1mF) must be connected directly from this pin  
to GND pin in order to supply the peak current to the power MOSFET during the transi  
tions.  
5
V5  
5V supply voltage.  
Rev. 1.2  
12/8/00  
4-6  
IRU3004, IRU3005  
BLOCK DIAGRAM  
Vfb3  
Enable  
Vset  
V12  
Vset  
Enable  
HDrv  
V12  
UVLO  
PWM  
Control  
V5  
+
V12  
Slope  
Comp  
LDrv  
Enable  
D0  
D1  
D2  
D3  
D4  
Osc  
5Bit  
DAC,  
Ctrl  
CS-  
Over  
Current  
Soft  
Start &  
Fault  
CS+  
Logic  
200uA  
Logic  
Enable  
Ct / En  
SS  
Vfb2  
Lin2  
1.1Vset  
PGd  
Gnd  
1.5V  
Lin1  
Vfb1  
0.9Vset  
3004blk2-1.3  
Figure 1 - Simplified block diagram of the IRU3004  
Rev. 1.2  
12/8/00  
4-7  
IRU3004, IRU3005  
TYPICAL APPLICATION  
Pentium III  
L1  
L2  
Q1  
5V  
Vout 3  
R16  
R17  
C16  
C5  
R1  
C7  
R4  
Q2  
C13  
C3  
C4  
C10  
R2  
R3  
R12  
R13  
3.3V  
12V  
C6  
Q3  
Vout 1  
C11  
12  
5
8
9
7
11  
10  
14  
Vfb3  
R18  
R7  
R8  
V12  
V5  
CS+  
HDrv  
CS-  
LDrv  
Gnd  
R11  
C15  
1
Ct  
Lin1  
2
C1  
IRU3004  
13 SS  
D4  
15  
Vfb1  
Lin2  
20  
3
Q4  
C2  
Vout 2  
D3  
16  
D2  
17  
D1  
18  
D0  
19  
PGd  
6
Vfb2  
4
C9  
C12  
R14  
VID4  
3004app2-2.0  
VID3  
VID2  
VID1  
VID0  
R9  
3.3V  
C14  
R15  
R5  
Power Good  
C8  
Figure 2 - Typical application of IRU3004 or IRU3005 in an on-board DC-DC converter providing the  
Core, GTL+, and Clock supplies for the Pentium II microprocessor  
Part #  
IRU3004  
IRU3005  
R7 Value  
See Parts List  
Short  
R8 Value  
See Parts List  
Open  
Table 2 - Describes the differences between IRU3004 and IRU3005 applications  
Rev. 1.2  
12/8/00  
4-8  
IRU3004, IRU3005  
IRU3004/IRU3005 Application Parts List  
Ref Design Description Qty  
Part #  
Manuf  
Q1  
Q2  
Q3  
Q4  
L1  
MOSFET  
1
1
1
1
1
1
1
2
2
1
1
3
1
1
6
1
1
1
1
1
3
2
2
1
3
1
1
1
1
IRL3103S, TO-263 package  
IRL3103D1S, TO-263 package  
MPS2222A, SOT-23 package  
IRLR024, TO-252 package  
IR  
IR  
MOSFET  
Bipolar Trans, GP  
MOSFET  
Motorola  
IR  
Inductor  
L=1mH, 5052 core with 4 turns of 1.0mm wire  
L=2.7mH, 5052B core with 7 turns of 1.2mm wire  
150pF, 0603  
MicroMetal  
Micro Metal  
L2  
Inductor  
C1  
Capacitor, Ceramic  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
Capacitor, Ceramic  
C2, 6  
C3  
1uF, 0603  
10MV1200GX, 1200mF,10V  
1mF, 0805  
Sanyo  
C4  
C5  
220pF, 0603  
C7, 14, 15 Capacitor, Ceramic  
1000pF, 0603  
C8  
C9  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
Resistor  
0.1mF, 0603  
6MV1000GX, 1000mF, 6.3V  
6MV1500GX, 1500mF, 6.3V  
6MV150GX, 150mF, 6.3V  
6MV1000GX, 1000mF, 6.3V  
10MV470GX, 470mF, 10V  
4.7mF, 1206  
Sanyo  
Sanyo  
Sanyo  
Sanyo  
Sanyo  
C10  
C11  
C12  
C13  
C16  
R1  
3.3kW, 5%, 0603  
R2, 3, 4 Resistor  
4.7W, 5%, 1206  
R5, 15  
R7, 12  
R8  
Resistor  
Resistor  
Resistor  
10kW, 5%, 0603  
100W, 1%, 0603  
150W, 1%, 0603  
R9, 11, 14 Resistor  
100W, 5%, 0603  
R13  
R16  
R17  
R18  
Resistor  
Resistor  
Resistor  
Resistor  
22kW, 1%, 0603  
220W, 1%, 0603  
330W, 1%, 0603  
10W, 5%, 0603  
Note 1: R16, R17, C16, R12, and R13 set the Vcore 2% higher for level shift to reduce CPU transient voltage  
Note 2: R14 and R15 set the 1.5V approximately 1% higher to account for the trace resistance drop  
Rev. 1.2  
12/8/00  
4-9  
IRU3004, IRU3005  
TYPICAL APPLICATION  
Pentium with AGP  
L1  
L2  
Q1  
5V  
Vout 3  
R16  
R17  
C16  
C5  
R1  
C7  
R4  
Q2  
C13  
C3  
C4  
C10  
R2  
R3  
R12  
R13  
3.3V  
12V  
Q3  
C6  
C9  
C11  
12  
5
8
9
7
11  
10  
14  
Vfb3  
Lin1  
R18  
R7  
R8  
V12  
V5  
CS+  
HDrv  
CS-  
LDrv  
Gnd  
R11  
1
Ct  
2
3
C15  
C1  
IRU3004  
13 SS  
Vfb1  
C2  
D4  
15  
D3  
16  
D2  
17  
D1  
18  
D0  
19  
PGd  
6
Vfb2  
4
Lin2  
20  
Q4  
3.3V  
C12  
R9  
VID4  
R14  
VID3  
VID2  
VID1  
VID0  
C14  
3.3V  
3004app3-1.4  
R15  
R5  
Power Good  
C8  
Figure 3 - Typical application of IRU3004 in a Pentium with AGP where the power dissipation of the 3.3V  
linear regulator is equally distributed between Q3 and Q4 pass transistors. This equal distribution is  
possible by accurately regulating the first regulator using the IRU3004 linear controller and its internal  
1% reference voltage while the second controller regulates the output of the first regulator from 4.17V to  
3.3V, thereby distributing the power dissipation equally.  
Rev. 1.2  
12/8/00  
4-10  
IRU3004, IRU3005  
IRU3004 Application Parts List  
Ref Desig Description  
Qty  
Part #  
Manuf  
Q1  
Q2  
MOSFET  
MOSFET  
MOSFET  
Inductor  
1
IRL3103s, TO-263 package  
IRL3103D1S, TO-263 package  
IRL3303S, TO-263 package  
L=1mH, 5052 core with 4 turns of  
1.0mm wire  
IR  
1
2
1
IR  
IR  
Q3,4  
L1  
Micro Metal  
L2  
Inductor  
1
L=2.7mH, 5052B core with 7 turns of  
1.2mm wire  
Micro Metal  
Sanyo  
C1  
C2,6  
C3  
Capacitor, Ceramic  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
Capacitor, Ceramic  
1
2
2
1
1
3
1
1
6
1
1
1
1
1
3
2
1
2
3
1
1
1
1
1
150pF, 0603  
1mF, 0603  
10MV1200GX, 1200mF,10V  
1mF, 0805  
C4  
C5  
220pF, 0603  
C7,14,15 Capacitor, Ceramic  
1000pF, 0603  
C8  
C9  
Capacitor, Ceramic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Electrolytic  
Capacitor, Ceramic  
Resistor  
0.1mF, 0603  
6MV1000GX, 1000mF, 6.3V  
6MV1500GX, 1500mF, 6.3V  
6MV150GX, 150mF, 6.3V  
6MV1000GX, 1000mF, 6.3V  
10MV470GX, 470mF, 10V  
4.7mF, 1206  
Sanyo  
Sanyo  
Sanyo  
Sanyo  
Sanyo  
C10  
C11  
C12  
C13  
C16  
R1  
3.3kW, 5%, 0603  
R2,3,4  
R5,15  
R7  
Resistor  
4.7W, 5%, 1206  
Resistor  
10kW, 5%, 0603  
Resistor  
267W, 1%, 0603  
R8  
Resistor  
150W, 1%, 0603  
R9,11,14 Resistor  
100W, 5%, 0603  
R12  
R13  
R16  
R17  
R18  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
100W, 1%, 0603  
22kW, 1%, 0603  
220W, 1%, 0603  
330W, 1%, 0603  
10W, 5%, 0603  
Note 1: R16, R17, C16, R12, and R13 set the Vcore 2% higher for level shift to reduce CPU transient voltage  
Rev. 1.2  
12/8/00  
4-11  
IRU3004, IRU3005  
shifting during the load transient eases the requirement  
for the output capacitor ESR at the cost of load regula-  
tion. One can show that the new ESR requirement eases  
up by half the total trace resistance. For example, if the  
ESR requirement of the output capacitors without volt-  
age level shifting must be 7mW, then after level shifting  
the new ESR will only need to be 9.5mW if the trace  
resistance is 5mW (7+5/2=9.5). However, one must be  
careful that the combined “voltage level shifting” and the  
transient response is still within the maximum tolerance  
of the Intel specification. To insure this, the maximum  
trace resistance must be less than:  
APPLICATION INFORMATION  
An example of how to calculate the components for the  
application circuit is given below.  
Assuming, two sets of output conditions that this regu-  
lator must meet,  
a) Vo=2.8V, Io=14.2A, DVo=185mV, DIo=14.2A  
b) Vo=2V, Io=14.2A, DVo=140mV, DIo=14.2A  
The regulator design will be done such that it meets the  
worst case requirement of each condition.  
Output Capacitor Selection  
Rs£ 2(Vspec - 0.02*Vo - DVo)/DI  
Where :  
The first step is to select the output capacitor. This is  
done primarily by selecting the maximum ESR value  
that meets the transient voltage budget of the total DVo  
specification. Assuming that the regulators DC initial  
accuracy plus the output ripple is 2% of the output volt-  
age, then the maximum ESR of the output capacitor is  
calculated as:  
Rs=Total maximum trace resistance allowed  
Vspec=Intel total voltage spec  
Vo=Output voltage  
DVo=Output ripple voltage  
DI=load current step  
For example, assuming:  
Vspec=±140 mV=±0.1V for 2V output  
Vo=2V  
DVo=assume 10mV=0.01V  
DI=14.2A  
100  
ESR £  
= 7 mW  
14.2  
The Sanyo MVGX series is a good choice to achieve  
both the price and performance goals. The 6MV1500GX,  
1500mF, 6.3V has an ESR of less than 36mW typical.  
Selecting 6 of these capacitors in parallel has an ESR  
of »6mW which achieves our low ESR goal.  
Then the Rs is calculated to be:  
Rs£ 2(0.140 - 0.02*2 - 0.01)/14.2=12.6mW  
However, if a resistor of this value is used, the maximum  
power dissipated in the trace (or if an external resistor is  
being used) must also be considered. For example if  
Other type of Electrolytic capacitors from other manu-  
facturers to consider are the Panasonic FA series or the  
Nichicon PL series.  
Rs=12.6mW,  
the  
power  
dissipated  
is  
(Io^2)*Rs=(14.2^2)*12.6=2.54W. This is a lot of power to  
be dissipated in a system. So, if the Rs=5mW, then the  
power dissipated is about 1W which is much more ac-  
ceptable. If level shifting is not implemented, then the  
maximum output capacitor ESR was shown previously  
to be 7mW which translated to » 6 of the 1500mF,  
6MV1500GX type Sanyo capacitors. With Rs=5mW, the  
maximum ESR becomes 9.5mW which is equivalent to  
» 4 caps. Another important consideration is that if a  
trace is being used to implement the resistor, the power  
dissipated by the trace increases the case temperature  
of the output capacitors which could seriously effect the  
life time of the output capacitors.  
Reducing the Output Capacitors Using Voltage Level  
Shifting Technique  
The trace resistance or an external resistor from the output  
of the switching regulator to the Slot 1 can be used to  
the circuit advantage and possibly reduce the number of  
output capacitors, by level shifting the DC regulation point  
when transitioning from light load to full load and vice  
versa. To accomplish this, the output of the regulator is  
typically set about half the DC drop that results from  
light load to full load. For example, if the total resistance  
from the output capacitors to the Slot 1 and back to the  
GND pin of the device is 5mW and if the total DI, the  
change from light load to full load is 14A, then the output  
voltage measured at the top of the resistor divider which  
is also connected to the output capacitors in this case,  
must be set at half of the 70mV or 35mV higher than the  
DAC voltage setting. This intentional voltage level  
Output Inductor Selection  
The output inductance must be selected such that un-  
der low line and the maximum output voltage condition,  
the inductor current slope times the output capacitor  
ESR is ramping up faster than the capacitor voltage is  
Rev. 1.2  
12/8/00  
4-12  
IRU3004, IRU3005  
drooping during a load current step. However, if the in- Power Component Selection  
ductor is too small, the output ripple current and ripple  
voltage become too large. One solution to bring the ripple Assuming IRL3103 MOSFETs as power components,  
current down is to increase the switching frequency, we will calculate the maximum power dissipation as fol-  
however that will be at the cost of reduced efficiency and lows:  
higher system cost. The following set of formulas are  
For high-side switch the maximum power dissipation  
derived to achieve the optimum performance without  
happens at maximum Vo and maximum duty cycle.  
many design iterations.  
Dmax » ( 2.8 + 0.27 ) / ( 4.75 - 0.27 + 0.27 ) = 0.65  
The maximum output inductance is calculated using the  
following equation:  
L = ESR * C * ( Vinmin - Vomax ) / ( 2* DI )  
Where:  
Vinmin = Minimum input voltage  
For Vo = 2.8 V , DI = 14.2 A  
Pdh = Dmax * Io^2*R  
DS(max)  
Pdh= 0.65*14.2^2*0.029=3.8 W  
=Maximum R of the MOSFET at 125°C  
R
DS(max) DS(on)  
For synch MOSFET, maximum power dissipation hap-  
pens at minimum Vo and minimum duty cycle.  
Dmin » ( 2 + 0.27 ) / ( 5.25 - 0.27 + 0.27 ) = 0.43  
L =0.006 * 9000 * ( 4.75 - 2.8) / (2 * 14.2) = 3.7mH  
Pds = (1-Dmin)*Io^2*R  
Pds=(1 - 0.43) * 14.2^2 * 0.029 = 3.33 W  
DS(max)  
Assuming that the programmed switching frequency is  
set at 200KHZ, an inductor is designed using the Heatsink Selection  
Micrometals’ powder iron core material. The summary  
of the design is outlined below:  
Selection of the heat sink is based on the maximum  
allowable junction temperature of the MOSFETS. Since  
we previously selected the maximum R at 125°C,  
then we must keep the junction below this temperature.  
Selecting TO-220 package gives qjc=1.8°C/W (from the  
venders’ datasheet ) and assuming that the selected  
heatsink is black anodized, the heat-sink-to-case ther-  
mal resistance is; qcs=0.05°C/W, the maximum heat  
sink temperature is then calculated as:  
The selected core material is Powder Iron, the selected  
core is T50-52D from Micro Metal wounded with 8 turns  
of # 16 AWG wire, resulting in 3mH inductance with » 3  
mW of DC resistance.  
DS(on)  
Assuming L = 3mH and the switching frequency; Fsw =  
200KHZ , the inductor ripple current and the output ripple  
voltage is calculated using the following set of equations:  
T = 1/Fsw  
T º Switching Period  
D » ( Vo + Vsync ) / ( Vin - Vsw + Vsync )  
D º Duty Cycle  
Ts = Tj - Pd * (qjc + qcs)  
Ts = 125 - 3.82 * (1.8 + 0.05) = 118 °C  
With the maximum heat sink temperature calculated in  
the previous step, the heat-sink-to-air thermal resistance  
(qsa) is calculated as follows:  
Ton = D * T  
Vsw º High side Mosfet ON Voltage = Io * R  
DS  
R
º Mosfet On Resistance  
DS  
Assuming Ta=35 °C  
DT = Ts - Ta = 118 - 35 = 83 °C Temperature Rise  
Above Ambient  
qsa = DT/Pd  
qsa = 83 / 3.82 = 22 °C/W  
T
= T - T  
off  
on  
Vsync º Synchronous MOSFET ON Voltage=Io * R  
DS  
DIr = ( Vo + Vsync ) * T /L  
off  
DIr º Inductor Ripple Current  
DVo = DIr * ESR  
Next, a heat sink with lower qsa than the one calculated  
in the previous step must be selected. One way to do  
DVo º Output Ripple Voltage  
In our example for Vo = 2.8V and 14.2 A load, assuming this is to simply look at the graphs of the “Heat Sink  
IRL3103 MOSFET for both switches with maximum on- Temp Rise Above the Ambient” vs. the “Power Dissipa-  
resistance of 19mW, we have:  
T = 1 / 200000 = 5mSec  
Vsw =Vsync= 14.2*0.019=0.27 V  
D » ( 2.8 + 0.27 ) / ( 5 - 0.27 + 0.27 ) = 0.61  
tion” given in the heatsink manufacturers’ catalog and  
select a heat sink that results in lower temperature rise  
than the one calculated in previous step. The following  
heat sinks from AAVID and Thermalloy meet this crite-  
ria.  
T
T
off  
= 0.61 * 5 = 3.1mSec  
= 5 - 3.1 = 1.9mSec  
on  
Co.  
Part #  
6078B  
577002  
DIr = ( 2.8 + 0.27 ) * 1.9 / 3 = 1.94A  
DVo = 1.94 * .006 = .011 V = 11mV  
Thermalloy  
AAVID  
Rev. 1.2  
12/8/00  
4-13  
IRU3004, IRU3005  
Following the same procedure for the Schottky diode  
results in a heatsink with qsa = 25 °C/W. Although it is  
possible to select a slightly smaller heatsink, for sim-  
plicity the same heatsink as the one for the high side  
MOSFET is also selected for the synchronous MOSFET.  
Note that since the MOSFETs R  
DS(on)  
increases with  
temperature, this number must be divided by » 1.5, in  
order to find the R max at room temperature. The  
DS(on)  
Motorola MTP3055VL has a maximum of 0.18W R  
DS(on)  
at room temperature, which meets our requirement.  
Switcher Current Limit Protection  
To select the heatsink for the LDO MOSFET the first  
step is to calculate the maximum power dissipation of  
the device and then follow the same procedure as for the  
switcher.  
The PWM controller uses the MOSFET R  
DS(on)  
as the  
sensing resistor to sense the MOSFET current and com-  
pares to a programmed voltage which is set externally  
via a resistor (Rcs) placed between the drain of the  
MOSFET and the “CS+” terminal of the IC as shown in  
the application circuit. For example, if the desired cur-  
rent limit point is set to be 22A and from our previous  
Pd = ( Vin - Vo ) * IL  
Where :  
Pd = Power Dissipation of the Linear Regulator  
IL = Linear Regulator Load Current  
selection, the maximum MOSFET R  
the current sense resistor, Rcs is calculated as:  
=19mW, then  
DS(on)  
For the 1.5V and 2A load:  
Vcs=IcL*Rds=22*0.019=0.418V  
Rcs=Vcs/Ib=(0.418V)/(200uA)=2.1kW  
Where: Ib=200mA is the internal current setting of the  
device  
Pd = (3.3 - 1.5)*2=3.6 W  
Assuming Tj-max=125°C  
Ts = Tj - Pd * (qjc + qcs)  
Ts = 125 - 3.6 * (1.8 + 0.05) = 118 °C  
Switcher Timing Capacitor Selection  
With the maximum heat sink temperature calculated in  
the previous step, the heat-sink-to-air thermal resistance  
(qsa) is calculated as follows:  
The switching frequency can be programmed using an  
external timing capacitor. The value of Ct can be ap-  
proximated using the equation below:  
Assuming Ta=35 °C  
DT = Ts - Ta = 118 - 35 = 83 °C Temperature Rise  
Above Ambient  
3.5´ 10- 5  
F
SW  
»
CT  
qsa = DT/Pd  
qsa = 83 / 3.6 = 23 °C/W  
Where:  
Cr = Timing Capacitor  
FSW = Switching Frequency  
The same heat sink as the one selected for the switcher  
MOSFETs is also suitable for the 1.5V regulator. It is  
also possible to use TO-263 package or even the  
MTD3055VL in D-Pak if the load current is less than  
1.5A. For the 2.5V regulator since the dropout voltage is  
only 0.8V and the load current is less than 0.5A, for  
most applications the same MOSFET without heat sink  
or for low cost applications, one can use PN2222A in  
TO-92 or SOT-23 package.  
If, FSW = 200kHz:  
3.5 ´ 10- 5  
200 ´ 103  
C
T
»
= 175pF  
LDO Power MOSFET Selection  
LDO Regulator Component Selection  
The first step in selecting the power MOSFET for the  
linear regulators is to select its maximum R  
on the input to output Dropout voltage and the maximum  
load current.  
based  
Since the internal voltage reference for the linear regula-  
tors is set at 1.5V for all devices, there is no need to  
divide the output voltage for the 1.5V, GTL+ regulator.  
DS(on)  
R
= (V - Vo) / IL  
DS(max)  
in  
For Vo = 1.5V, and V = 3.3V , IL=2A  
in  
R
= (3.3 - 1.5)/2= 0.9W  
DS(max)  
Rev. 1.2  
12/8/00  
4-14  
IRU3004, IRU3005  
For the 2.5V, Clock supply the resistor dividers are se-  
lected per following:  
14A, then the output voltage measured at the top of the  
resistor divider which is also connected to the output  
capacitors in this case, must be set at half of the 70 mV  
or 35mV higher than the DAC voltage setting. To do this,  
the top resistor of the resistor divider (R12 in the appli-  
cation circuit) is set at 100W, and the R13 is calculated.  
For example, if DAC voltage setting is for 2.8V and the  
desired output under light load is 2.835V, then R13 is  
calculated using the following formula:  
Vo=(1+Rt/Rb)*Vref  
Where:  
Rt=Top resistor divider  
Rb=Bottom resistor divider  
Vref=1.5V typical  
Assuming Rt=100W, for Vo=2.5V  
Rb=Rt / [(Vo/Vref) - 1]  
Rb=100 / [(2.5/1.5) - 1]=150W  
R13= 100*{Vdac /(Vo - 1.004*Vdac)} [W]  
R13= 100*{2.8 /(2.835 - 1.004*2.800)} = 11.76 kW  
Select 11.8 kW , 1%  
For 1.5V output, Rt can be shorted and Rb left open.  
However, it is recommended to leave the resistor divid-  
ers as shown in the typical application circuit so that  
the output voltage can be adjusted higher to account for  
the trace resistance in the final board layout.  
Note: The value of the top resistor must not exceed 100W.  
The bottom resistor can then be adjusted to raise the  
output voltage.  
It is also recommended that an external filter be added  
on the linear regulators to reduce the amount of the high  
frequency ripple at the output of the regulators. This can  
simply be done by the resistor capacitor combination  
as shown in the application circuit.  
Soft Start Capacitor Selection  
The soft start capacitor must be selected such that dur-  
ing the start up when the output capacitors are charging  
up, the peak inductor current does not reach the current  
limit threshold. A minimum of 1mF capacitor insures this  
for most applications. An internal 10mA current source  
charges the soft start capacitor which slowly ramps up  
the inverting input of the PWM comparator Vfb3. This  
insures the output voltage to ramp at the same rate as  
the soft start cap thereby limiting the input current. For  
example, with 1mF and the 10mA internal current source  
the ramp up rate is (DV/ Dt)=I/C = 1V/100mS. Assum-  
ing that the output capacitance is 9000mF, the maxi-  
mum start up current will be:  
For IRU3005 that includes the resistor dividers internally,  
Vfb1 can be directly connected to the output voltage  
without any external resistors for a preset voltage of 2.5V.  
The disadvantage is that the output voltage is not ad-  
justable anymore. The application circuit given for  
Pentium II can use either the IRU3004 or IRU3005 fam-  
ily of parts for maximum flexibility.  
Disabling the LDO Regulators  
The LDO controllers can easily be disabled by connect-  
ing the feedback pins, Vfb1 and Vfb2 to a voltage higher  
than 2.5V such as 5V for all devices.  
I=9000mF*(1V/100mS)=0.09A  
Input Filter  
Switcher Output Voltage Adjust  
It is highly recommended to place an inductor between  
the system 5V supply and the input capacitors of the  
switching regulator to isolate the 5V supply from the  
switching noise that occurs during the turn on and off of  
the switching components. Typically an inductor in the  
range of 1 to 3mH will be sufficient in this type of appli-  
cation.  
As it was discussed earlier, the trace resistance from  
the output of the switching regulator to the Slot 1 can be  
used to the circuit advantage and possibly reduce the  
number of output capacitors, by level shifting the DC  
regulation point when transitioning from light load to full  
load and vice versa. To account for the DC drop, the  
output of the regulator is typically set about half the DC  
drop that results from light load to full load. For example,  
if the total resistance from the output capacitors to the  
Slot 1 and back to the GND pin of the part is 5mW and if  
the total DI, the change from light load to full load is  
Switcher External Shutdown  
The best way to shutdown the switcher is to pull down  
on the soft start pin using an external small signal tran-  
sistor such as 2N3904 or 2N7002 small signal MOSFET.  
This allows slow ramp up of the output, the same as the  
power up.  
Rev. 1.2  
12/8/00  
4-15  
IRU3004, IRU3005  
Layout Considerations  
Switching regulators require careful attention to the lay-  
out of the components, specifically power components  
since they switch large currents. These switching com-  
ponents can create large amount of voltage spikes and  
high frequency harmonics if some of the critical compo-  
nents are far away from each other and are connected  
with inductive traces. The following is a guideline of how  
to place the critical components and the connections  
between them in order to minimize the above issues.  
8) Place R11, C15, Q3 and C11 close to each other and  
do the same with R9, C14, Q4 and C12.  
Note: It is better to place the linear regulator compo-  
nents close to the IC and then run a trace from the  
output of each regulator to its respective load such  
as 2.5V to the clock and 1.5V for GTL + termination.  
However, if this is not possible then the trace from  
the linear drive output pins, pins 2 and 20 must be  
routed away from any high frequency data signals.  
Start the layout by first placing the power components:  
It is critical, to place high frequency ceramic capaci-  
tors close to the clock chip and termination resistors  
to provide local bypassing.  
1) Place the input capacitors C3 and the high side  
MOSFET, Q1 as close to each other as possible  
2) Place the synchronous MOSFET, Q2 and the Q1 as  
close to each other as possible with the intention  
that the source of Q1 and drain of the Q2 has the  
shortest length.  
9) Place timing capacitor C1 close to pin 1 and soft  
start capacitor C2 close to pin 13.  
Component connections:  
3) Place the snubber R4 & C7 between Q1 & Q2.  
Note: It is extremely important that no data bus should  
be passing through the switching regulator section spe-  
cifically close to the fast transition nodes such as PWM  
drives or the inductor voltage.  
4) Place the output inductor, L2 and the output capaci-  
tors, C10 between the MOSFET and the load with  
output capacitors distributed along the slot 1 and  
close to it.  
Using the 4 layer board, dedicate on layer to GND, an-  
other layer as the power layer for the 5V, 3.3V, Vcore,  
1.5V and if it is possible for the 2.5V.  
5) Place the bypass capacitors, C4 and C6 right next to  
12V and 5V pins. C4 next to the 12V, pin 12 and C6  
next to the 5V, pin 5.  
Connect all grounds to the ground plane using direct  
vias to the ground plane.  
6) Place the controller IC such that the PWM output  
drives, pins 9 and 11 are relatively short distance from  
gates of Q1 and Q2.  
Use large low inductance/low impedance plane to con-  
nect the following connections either using component  
side or the solder side.  
7) Place resistor dividers, R7 & R8 close to pin 3, R12  
& R13 (note 1) close to pin 14 and R14 and R15  
(note 1) close to pin 20.  
a) C3 to Q1 Drain  
b) Q1 Source to Q2 Drain  
c) Q2 drain to L2  
Note 1: Although, the PWM controller does not re-  
quire R12-15 resistors, and the feedback pins 3 and  
14 can be directly connected to their respective out-  
puts, they can be used to set the outputs slightly  
higher to account for any output drop at the load due  
to the trace resistance.  
d) L2 to the output capacitors, C10  
e) C10 to the slot 1  
f) Input filter L1 to the C3  
g) C9 to Q4 drain  
h) C12 to the Q4 source  
Connect the rest of the components using the shortest  
connection possible.  
Rev. 1.2  
12/8/00  
4-16  

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