IRU3005CW-TRPBF [INFINEON]
Switching Controller, 250kHz Switching Freq-Max, PDSO20, PLASTIC, SOIC-20;型号: | IRU3005CW-TRPBF |
厂家: | Infineon |
描述: | Switching Controller, 250kHz Switching Freq-Max, PDSO20, PLASTIC, SOIC-20 光电二极管 |
文件: | 总14页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRU3004, IRU3005
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK
CONTROLLER IC WITH DUAL LDO CONTROLLER
FEATURES
DESCRIPTION
The IRU3004/IRU3005 series of controller ICs are spe-
cifically designed to meet Intel specifications for Pentium
IIIä microprocessor applications as well as the next
generation P6 family processors. The IC provides a single
chip controller IC for the Vcore, GTL+ and clock sup-
plies required for the Pentium III applications. These
devices feature a patented topology, that in combina-
tion with a few external components as shown in the
typical application circuit, will provide in excess of 20A
of output current for an on-board DC-DC converter while
automatically providing the right output voltage via the
five-bit internal DAC meeting the latest VRM specifica-
tion. These products also feature loss-lesscurrent sens-
Meets latest VRM 8.4 specification for PIII
Provides single chip solution for Vcore, GTL+ and
clock supply
On-board DAC programs the output voltage from
1.3V to 3.5V. The IRU3004/IRU3005 remains on for
VID code of (11111).
Dual linear regulator controller on-board for 1.5V
GTL+ and 2.5V clock supplies
Loss-less short circuit protection
Synchronous operation allows maximum efficiency
Patented architecture allows fixed frequency opera-
tion as well as 100% duty cycle during dynamic
load
ing by using the R
of the high side power MOSFET
Minimum part count. No external compensation.
Soft start
High current totem pole driver for direct driving of the
external power MOSFET
DS(on)
as the sensing resistor and a Power Good window com-
parator that switches its open collector output low when
the output is outside of a ±10% window. Other features
of the device are: Undervoltage lockout for both 5V and
12V supplies, an external programmable soft start func-
tion as well as programming the oscillator frequency by
using an external capacitor.
Power Good function
APPLICATIONS
Pentium III & next generation processor DC to DC
converter application
Low cost Pentium with AGP
TYPICAL APPLICATION
L1
L2
Q1
5V
Vout 3
R16
R17
C16
C5
R1
C7
R4
Q2
C13
C3
C4
C10
R2
R3
R12
R13
3.3V
12V
C6
Q3
Vout 1
Vout 2
C11
R18
12
V12
5
V5
8
CS+
9
7
CS-
11
10
Gnd
14
Vfb3
R7
R8
HDrv
LDrv
R11
C15
1
Ct
Lin1 2
C1
IRU3004
13 SS
D4
Vfb1
Lin2
3
Q4
C2
D3
16
D2
17
D1
18
D0
19
PGd
6
Vfb2
4
15
20
C9
C12
R14
R15
VID4
3004app2-2.0
VID3
VID2
VID1
VID0
R9
3.3V
C14
R5
PowerGood
C8
Notes: Pentium III is trademark of Intel Corp.
PACKAGE ORDER INFORMATION
Ta (°C)
0 TO 70
0 TO 70
Device
IRU3004CW
IRU3005CW
Package
20-pin Plastic SOIC WB
20-pin Plastic SOIC WB
2.5V Output Voltage
Adjustable
Fixed
Rev. 1.2
12/8/00
4-3
IRU3004, IRU3005
ABSOLUTE MAXIMUM RATINGS
V5 supply Voltage ................................................. 10V
V12 Supply Voltage ................................................. 20V
Storage Temperature Range ...................................... -65 TO 150°C
Operating Junction Temperature Range ...................... 0 TO 125°C
PACKAGE INFORMATION
20-PIN WIDE BODY PLASTIC SOIC (W)
TOP VIEW
1
2
3
4
5
6
7
8
9
20
19
18
17
16
Ct / En
Lin1
Vfb1
Vfb2
V5
Lin2
D0
D1
D2
D3
PGd
CS-
15 D4
14 Vfb3
13 SS
CS+
HDrv
12 V12
11 LDrv
Gnd 10
qJA=85°C/W
ELECTRICAL SPECIFICATIONS
Unless otherwise specified, these specifications apply over,V12 = 12V, V5 = 5V and Ta=0 to 70°C. Typical values
refer to Ta =25°C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the
ambient temperature.
PARAMETER
SYM
TEST CONDITION
MIN
TYP
MAX
UNITS
VID Section
DAC output voltage
0.99Vs
Vs
1.01Vs
V
(note 1)
DAC Output Line Regulation
DAC Output Temp Variation
VID Input LO
0.1
0.5
0.4
%
%
V
VID Input HI
2
V
VID input internal pull-up
resistor to V5
27
kW
Power Good Section
Under voltage lower trip point
Under voltage upper trip point
UV Hysterises
Vout ramping down
Vout ramping up
0.89Vs
0.90Vs
0.92Vs
.02Vs
0.91Vs
V
V
V
V
V
V
V
V
.015Vs
1.09Vs
.025Vs
1.11Vs
Over voltage upper trip point
Over voltage lower trip point
OV Hysterises
Vout ramping up
1.10Vs
1.08Vs
.02Vs
Vout ramping down
.015Vs
4.8
.025Vs
0.4
Power Good Output LO
Power Good Output HI
Soft Start Section
Soft Start Current
RL=3mA
RL=5K pull up to 5V
CS+ =0V, CS- =5V
10
mA
Rev. 1.2
12/8/00
4-4
IRU3004, IRU3005
PARAMETER
UVLO Section
SYM
TEST CONDITION
Supply ramping up
Supply ramping up
MIN
TYP
MAX
UNITS
UVLO Threshold-12V
UVLO Hysterises-12V
UVLO Threshold-5V
UVLO Hysterises-5V
Error Comparator Section
Input bias current
9.2
0.3
4.1
0.2
10
10.8
0.5
4.5
0.4
V
V
V
V
0.4
4.3
0.3
2
+2
100
mA
mV
nS
Input Offset Voltage
Delay to Output
-2
Vdiff=10mV
Current Limit Section
C.S Threshold Set Current
C.S Comp Offset Voltage
Hiccup Duty Cycle
Supply Current
160
-5
200
240
+5
2
mA
mV
%
Css=0.1mF
Operating Supply Current
CL=3000pF
V5
20
14
V12
mA
Output Drivers Section
Rise Time
Fall Time
Dead Band Time
Oscillator Section
Osc Frequency
Osc Valley
CL=3000pF
CL=3000pF
CL=3000pF
70
70
200
100
130
300
nS
nS
nS
100
190
Ct=150pF
220
V5
250
0.2
Khz
V
Osc Peak
V
LDO Controller Section
Vfb1 & Vfb2 (IRU3004)
Vfb2 (IRU3005)
Vfb1 (IRU3005)
Input bias current
Lin1 or Lin2 Drive Current
1.477
1.500
2.500
50
1.522
2
V
V
mA
mA
Note 1: Vs refers to the set point voltage given in Table 1.
D4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
D3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
D0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
D4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
D3
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D2
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
D1
D0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Vs
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
Table 1 - Set point voltage vs. VID codes
Rev. 1.2
12/8/00
4-5
IRU3004, IRU3005
PIN DESCRIPTIONS
PIN# PIN SYMBOL
PIN DESCRIPTION
19
18
17
16
15
6
D0
D1
LSB input to the DAC that programs the output voltage. This pin can be pulled up
externally by a 10k resistor to either 3.3V or 5V supply.
Input to the DAC that programs the output voltage. This pin can be pulled up externally
by a 10kW resistor to either 3.3V or 5V supply.
D2
Input to the DAC that programs the output voltage. This pin can be pulled up externally
by a 10k resistor to either 3.3V or 5V supply.
D3
MSB input to the DAC that programs the output voltage. This pin can be pulled up
externally by a 10k resistor to either 3.3V or 5V supply.
D4
This pin selects a range of output voltages for the DAC. When in the LOW state the
range is 1.3V to 2.05V. For VID codes of all "1" the IRU3004 keeps all the outputs on.
PGd
This pin is an open collector output that switches LO when the output of the con-
verter is not within ±10% (typ) of the nominal output voltage. When PWRGD pin switches
LO the sat voltage is less than 0.4V at 3mA.
14
8
Vfb3
CS+
This pin is connected directly to the output of the Core supply to provide feedback to the
Error comparator.
This pin is connected to the Drain of the power MOSFET of the Core supply and it
provides the positive sensing for the internal current sensing circuitry. An external resis
tor programs the C.S threshold depending on the R
of the power MOSFET. An
DS
external capacitor is placed in parallel with the programming resistor to provide high
frequency noise filtering.
7
CS-
SS
This pin is connected to the Source of the power MOSFET for the Core supply and it
provides the negative sensing for the internal current sensing circuitry.
13
This pin provides the soft start for the switching regulator. An internal current source
charges an external capacitor that is connected from this pin to the GND which ramps
up the outputs of the switching regulator, preventing the outputs from overshooting as
well as limiting the input current. The second function of the Soft Start cap is to provide
long off time (HICCUP) for the synchronous MOSFET during current limiting.
1
2
Ct
This pin programs the oscillator frequency in the range of 50kHZ to 500kHZ with an
external capacitor connected from this pin to the GND.
Lin1
Vfb1
Lin2
This pin controls the gate of an external transistor for either the GTL+ linear regulator or
Clock supply.
3
This pin provides the feedback for the linear regulator that its output drive is Lin1 pin. For
IRU3005, this pin is connected to the 2.5V regulator, eliminating the external dividers.
20
This pin controls the gate of an external transistor for either the GTL+ linear regulator or
Clock supply.
4
Vfb2
Gnd
This pin provides the feedback for the linear regulator that its output drive is Lin2 pin.
10
This pin serves as the ground pin and must be connected directly to the ground plane.
A high frequency capacitor (0.1 to 1mF) must be connected from V5 and V12 pins to
this pin for noise free operation.
11
9
LDrv
HDrv
V12
Output driver for the synchronous power MOSFET.
Output driver for the high-side power MOSFET.
12
This pin is connected to the 12 V supply and serves as the power Vcc pin for the output
drivers. A high frequency capacitor (0.1 to 1mF) must be connected directly from this pin
to GND pin in order to supply the peak current to the power MOSFET during the transi
tions.
5
V5
5V supply voltage.
Rev. 1.2
12/8/00
4-6
IRU3004, IRU3005
BLOCK DIAGRAM
Vfb3
Enable
Vset
V12
Vset
Enable
HDrv
V12
UVLO
PWM
Control
V5
+
V12
Slope
Comp
LDrv
Enable
D0
D1
D2
D3
D4
Osc
5Bit
DAC,
Ctrl
CS-
Over
Current
Soft
Start &
Fault
CS+
Logic
200uA
Logic
Enable
Ct / En
SS
Vfb2
Lin2
1.1Vset
PGd
Gnd
1.5V
Lin1
Vfb1
0.9Vset
3004blk2-1.3
Figure 1 - Simplified block diagram of the IRU3004
Rev. 1.2
12/8/00
4-7
IRU3004, IRU3005
TYPICAL APPLICATION
Pentium III
L1
L2
Q1
5V
Vout 3
R16
R17
C16
C5
R1
C7
R4
Q2
C13
C3
C4
C10
R2
R3
R12
R13
3.3V
12V
C6
Q3
Vout 1
C11
12
5
8
9
7
11
10
14
Vfb3
R18
R7
R8
V12
V5
CS+
HDrv
CS-
LDrv
Gnd
R11
C15
1
Ct
Lin1
2
C1
IRU3004
13 SS
D4
15
Vfb1
Lin2
20
3
Q4
C2
Vout 2
D3
16
D2
17
D1
18
D0
19
PGd
6
Vfb2
4
C9
C12
R14
VID4
3004app2-2.0
VID3
VID2
VID1
VID0
R9
3.3V
C14
R15
R5
Power Good
C8
Figure 2 - Typical application of IRU3004 or IRU3005 in an on-board DC-DC converter providing the
Core, GTL+, and Clock supplies for the Pentium II microprocessor
Part #
IRU3004
IRU3005
R7 Value
See Parts List
Short
R8 Value
See Parts List
Open
Table 2 - Describes the differences between IRU3004 and IRU3005 applications
Rev. 1.2
12/8/00
4-8
IRU3004, IRU3005
IRU3004/IRU3005 Application Parts List
Ref Design Description Qty
Part #
Manuf
Q1
Q2
Q3
Q4
L1
MOSFET
1
1
1
1
1
1
1
2
2
1
1
3
1
1
6
1
1
1
1
1
3
2
2
1
3
1
1
1
1
IRL3103S, TO-263 package
IRL3103D1S, TO-263 package
MPS2222A, SOT-23 package
IRLR024, TO-252 package
IR
IR
MOSFET
Bipolar Trans, GP
MOSFET
Motorola
IR
Inductor
L=1mH, 5052 core with 4 turns of 1.0mm wire
L=2.7mH, 5052B core with 7 turns of 1.2mm wire
150pF, 0603
MicroMetal
Micro Metal
L2
Inductor
C1
Capacitor, Ceramic
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Ceramic
Capacitor, Ceramic
C2, 6
C3
1uF, 0603
10MV1200GX, 1200mF,10V
1mF, 0805
Sanyo
C4
C5
220pF, 0603
C7, 14, 15 Capacitor, Ceramic
1000pF, 0603
C8
C9
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Ceramic
Resistor
0.1mF, 0603
6MV1000GX, 1000mF, 6.3V
6MV1500GX, 1500mF, 6.3V
6MV150GX, 150mF, 6.3V
6MV1000GX, 1000mF, 6.3V
10MV470GX, 470mF, 10V
4.7mF, 1206
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
C10
C11
C12
C13
C16
R1
3.3kW, 5%, 0603
R2, 3, 4 Resistor
4.7W, 5%, 1206
R5, 15
R7, 12
R8
Resistor
Resistor
Resistor
10kW, 5%, 0603
100W, 1%, 0603
150W, 1%, 0603
R9, 11, 14 Resistor
100W, 5%, 0603
R13
R16
R17
R18
Resistor
Resistor
Resistor
Resistor
22kW, 1%, 0603
220W, 1%, 0603
330W, 1%, 0603
10W, 5%, 0603
Note 1: R16, R17, C16, R12, and R13 set the Vcore 2% higher for level shift to reduce CPU transient voltage
Note 2: R14 and R15 set the 1.5V approximately 1% higher to account for the trace resistance drop
Rev. 1.2
12/8/00
4-9
IRU3004, IRU3005
TYPICAL APPLICATION
Pentium with AGP
L1
L2
Q1
5V
Vout 3
R16
R17
C16
C5
R1
C7
R4
Q2
C13
C3
C4
C10
R2
R3
R12
R13
3.3V
12V
Q3
C6
C9
C11
12
5
8
9
7
11
10
14
Vfb3
Lin1
R18
R7
R8
V12
V5
CS+
HDrv
CS-
LDrv
Gnd
R11
1
Ct
2
3
C15
C1
IRU3004
13 SS
Vfb1
C2
D4
15
D3
16
D2
17
D1
18
D0
19
PGd
6
Vfb2
4
Lin2
20
Q4
3.3V
C12
R9
VID4
R14
VID3
VID2
VID1
VID0
C14
3.3V
3004app3-1.4
R15
R5
Power Good
C8
Figure 3 - Typical application of IRU3004 in a Pentium with AGP where the power dissipation of the 3.3V
linear regulator is equally distributed between Q3 and Q4 pass transistors. This equal distribution is
possible by accurately regulating the first regulator using the IRU3004 linear controller and its internal
1% reference voltage while the second controller regulates the output of the first regulator from 4.17V to
3.3V, thereby distributing the power dissipation equally.
Rev. 1.2
12/8/00
4-10
IRU3004, IRU3005
IRU3004 Application Parts List
Ref Desig Description
Qty
Part #
Manuf
Q1
Q2
MOSFET
MOSFET
MOSFET
Inductor
1
IRL3103s, TO-263 package
IRL3103D1S, TO-263 package
IRL3303S, TO-263 package
L=1mH, 5052 core with 4 turns of
1.0mm wire
IR
1
2
1
IR
IR
Q3,4
L1
Micro Metal
L2
Inductor
1
L=2.7mH, 5052B core with 7 turns of
1.2mm wire
Micro Metal
Sanyo
C1
C2,6
C3
Capacitor, Ceramic
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Ceramic
Capacitor, Ceramic
1
2
2
1
1
3
1
1
6
1
1
1
1
1
3
2
1
2
3
1
1
1
1
1
150pF, 0603
1mF, 0603
10MV1200GX, 1200mF,10V
1mF, 0805
C4
C5
220pF, 0603
C7,14,15 Capacitor, Ceramic
1000pF, 0603
C8
C9
Capacitor, Ceramic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Electrolytic
Capacitor, Ceramic
Resistor
0.1mF, 0603
6MV1000GX, 1000mF, 6.3V
6MV1500GX, 1500mF, 6.3V
6MV150GX, 150mF, 6.3V
6MV1000GX, 1000mF, 6.3V
10MV470GX, 470mF, 10V
4.7mF, 1206
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
C10
C11
C12
C13
C16
R1
3.3kW, 5%, 0603
R2,3,4
R5,15
R7
Resistor
4.7W, 5%, 1206
Resistor
10kW, 5%, 0603
Resistor
267W, 1%, 0603
R8
Resistor
150W, 1%, 0603
R9,11,14 Resistor
100W, 5%, 0603
R12
R13
R16
R17
R18
Resistor
Resistor
Resistor
Resistor
Resistor
100W, 1%, 0603
22kW, 1%, 0603
220W, 1%, 0603
330W, 1%, 0603
10W, 5%, 0603
Note 1: R16, R17, C16, R12, and R13 set the Vcore 2% higher for level shift to reduce CPU transient voltage
Rev. 1.2
12/8/00
4-11
IRU3004, IRU3005
shifting during the load transient eases the requirement
for the output capacitor ESR at the cost of load regula-
tion. One can show that the new ESR requirement eases
up by half the total trace resistance. For example, if the
ESR requirement of the output capacitors without volt-
age level shifting must be 7mW, then after level shifting
the new ESR will only need to be 9.5mW if the trace
resistance is 5mW (7+5/2=9.5). However, one must be
careful that the combined “voltage level shifting” and the
transient response is still within the maximum tolerance
of the Intel specification. To insure this, the maximum
trace resistance must be less than:
APPLICATION INFORMATION
An example of how to calculate the components for the
application circuit is given below.
Assuming, two sets of output conditions that this regu-
lator must meet,
a) Vo=2.8V, Io=14.2A, DVo=185mV, DIo=14.2A
b) Vo=2V, Io=14.2A, DVo=140mV, DIo=14.2A
The regulator design will be done such that it meets the
worst case requirement of each condition.
Output Capacitor Selection
Rs£ 2(Vspec - 0.02*Vo - DVo)/DI
Where :
The first step is to select the output capacitor. This is
done primarily by selecting the maximum ESR value
that meets the transient voltage budget of the total DVo
specification. Assuming that the regulators DC initial
accuracy plus the output ripple is 2% of the output volt-
age, then the maximum ESR of the output capacitor is
calculated as:
Rs=Total maximum trace resistance allowed
Vspec=Intel total voltage spec
Vo=Output voltage
DVo=Output ripple voltage
DI=load current step
For example, assuming:
Vspec=±140 mV=±0.1V for 2V output
Vo=2V
DVo=assume 10mV=0.01V
DI=14.2A
100
ESR £
= 7 mW
14.2
The Sanyo MVGX series is a good choice to achieve
both the price and performance goals. The 6MV1500GX,
1500mF, 6.3V has an ESR of less than 36mW typical.
Selecting 6 of these capacitors in parallel has an ESR
of »6mW which achieves our low ESR goal.
Then the Rs is calculated to be:
Rs£ 2(0.140 - 0.02*2 - 0.01)/14.2=12.6mW
However, if a resistor of this value is used, the maximum
power dissipated in the trace (or if an external resistor is
being used) must also be considered. For example if
Other type of Electrolytic capacitors from other manu-
facturers to consider are the Panasonic FA series or the
Nichicon PL series.
Rs=12.6mW,
the
power
dissipated
is
(Io^2)*Rs=(14.2^2)*12.6=2.54W. This is a lot of power to
be dissipated in a system. So, if the Rs=5mW, then the
power dissipated is about 1W which is much more ac-
ceptable. If level shifting is not implemented, then the
maximum output capacitor ESR was shown previously
to be 7mW which translated to » 6 of the 1500mF,
6MV1500GX type Sanyo capacitors. With Rs=5mW, the
maximum ESR becomes 9.5mW which is equivalent to
» 4 caps. Another important consideration is that if a
trace is being used to implement the resistor, the power
dissipated by the trace increases the case temperature
of the output capacitors which could seriously effect the
life time of the output capacitors.
Reducing the Output Capacitors Using Voltage Level
Shifting Technique
The trace resistance or an external resistor from the output
of the switching regulator to the Slot 1 can be used to
the circuit advantage and possibly reduce the number of
output capacitors, by level shifting the DC regulation point
when transitioning from light load to full load and vice
versa. To accomplish this, the output of the regulator is
typically set about half the DC drop that results from
light load to full load. For example, if the total resistance
from the output capacitors to the Slot 1 and back to the
GND pin of the device is 5mW and if the total DI, the
change from light load to full load is 14A, then the output
voltage measured at the top of the resistor divider which
is also connected to the output capacitors in this case,
must be set at half of the 70mV or 35mV higher than the
DAC voltage setting. This intentional voltage level
Output Inductor Selection
The output inductance must be selected such that un-
der low line and the maximum output voltage condition,
the inductor current slope times the output capacitor
ESR is ramping up faster than the capacitor voltage is
Rev. 1.2
12/8/00
4-12
IRU3004, IRU3005
drooping during a load current step. However, if the in- Power Component Selection
ductor is too small, the output ripple current and ripple
voltage become too large. One solution to bring the ripple Assuming IRL3103 MOSFETs as power components,
current down is to increase the switching frequency, we will calculate the maximum power dissipation as fol-
however that will be at the cost of reduced efficiency and lows:
higher system cost. The following set of formulas are
For high-side switch the maximum power dissipation
derived to achieve the optimum performance without
happens at maximum Vo and maximum duty cycle.
many design iterations.
Dmax » ( 2.8 + 0.27 ) / ( 4.75 - 0.27 + 0.27 ) = 0.65
The maximum output inductance is calculated using the
following equation:
L = ESR * C * ( Vinmin - Vomax ) / ( 2* DI )
Where:
Vinmin = Minimum input voltage
For Vo = 2.8 V , DI = 14.2 A
Pdh = Dmax * Io^2*R
DS(max)
Pdh= 0.65*14.2^2*0.029=3.8 W
=Maximum R of the MOSFET at 125°C
R
DS(max) DS(on)
For synch MOSFET, maximum power dissipation hap-
pens at minimum Vo and minimum duty cycle.
Dmin » ( 2 + 0.27 ) / ( 5.25 - 0.27 + 0.27 ) = 0.43
L =0.006 * 9000 * ( 4.75 - 2.8) / (2 * 14.2) = 3.7mH
Pds = (1-Dmin)*Io^2*R
Pds=(1 - 0.43) * 14.2^2 * 0.029 = 3.33 W
DS(max)
Assuming that the programmed switching frequency is
set at 200KHZ, an inductor is designed using the Heatsink Selection
Micrometals’ powder iron core material. The summary
of the design is outlined below:
Selection of the heat sink is based on the maximum
allowable junction temperature of the MOSFETS. Since
we previously selected the maximum R at 125°C,
then we must keep the junction below this temperature.
Selecting TO-220 package gives qjc=1.8°C/W (from the
venders’ datasheet ) and assuming that the selected
heatsink is black anodized, the heat-sink-to-case ther-
mal resistance is; qcs=0.05°C/W, the maximum heat
sink temperature is then calculated as:
The selected core material is Powder Iron, the selected
core is T50-52D from Micro Metal wounded with 8 turns
of # 16 AWG wire, resulting in 3mH inductance with » 3
mW of DC resistance.
DS(on)
Assuming L = 3mH and the switching frequency; Fsw =
200KHZ , the inductor ripple current and the output ripple
voltage is calculated using the following set of equations:
T = 1/Fsw
T º Switching Period
D » ( Vo + Vsync ) / ( Vin - Vsw + Vsync )
D º Duty Cycle
Ts = Tj - Pd * (qjc + qcs)
Ts = 125 - 3.82 * (1.8 + 0.05) = 118 °C
With the maximum heat sink temperature calculated in
the previous step, the heat-sink-to-air thermal resistance
(qsa) is calculated as follows:
Ton = D * T
Vsw º High side Mosfet ON Voltage = Io * R
DS
R
º Mosfet On Resistance
DS
Assuming Ta=35 °C
DT = Ts - Ta = 118 - 35 = 83 °C Temperature Rise
Above Ambient
qsa = DT/Pd
qsa = 83 / 3.82 = 22 °C/W
T
= T - T
off
on
Vsync º Synchronous MOSFET ON Voltage=Io * R
DS
DIr = ( Vo + Vsync ) * T /L
off
DIr º Inductor Ripple Current
DVo = DIr * ESR
Next, a heat sink with lower qsa than the one calculated
in the previous step must be selected. One way to do
DVo º Output Ripple Voltage
In our example for Vo = 2.8V and 14.2 A load, assuming this is to simply look at the graphs of the “Heat Sink
IRL3103 MOSFET for both switches with maximum on- Temp Rise Above the Ambient” vs. the “Power Dissipa-
resistance of 19mW, we have:
T = 1 / 200000 = 5mSec
Vsw =Vsync= 14.2*0.019=0.27 V
D » ( 2.8 + 0.27 ) / ( 5 - 0.27 + 0.27 ) = 0.61
tion” given in the heatsink manufacturers’ catalog and
select a heat sink that results in lower temperature rise
than the one calculated in previous step. The following
heat sinks from AAVID and Thermalloy meet this crite-
ria.
T
T
off
= 0.61 * 5 = 3.1mSec
= 5 - 3.1 = 1.9mSec
on
Co.
Part #
6078B
577002
DIr = ( 2.8 + 0.27 ) * 1.9 / 3 = 1.94A
DVo = 1.94 * .006 = .011 V = 11mV
Thermalloy
AAVID
Rev. 1.2
12/8/00
4-13
IRU3004, IRU3005
Following the same procedure for the Schottky diode
results in a heatsink with qsa = 25 °C/W. Although it is
possible to select a slightly smaller heatsink, for sim-
plicity the same heatsink as the one for the high side
MOSFET is also selected for the synchronous MOSFET.
Note that since the MOSFETs R
DS(on)
increases with
temperature, this number must be divided by » 1.5, in
order to find the R max at room temperature. The
DS(on)
Motorola MTP3055VL has a maximum of 0.18W R
DS(on)
at room temperature, which meets our requirement.
Switcher Current Limit Protection
To select the heatsink for the LDO MOSFET the first
step is to calculate the maximum power dissipation of
the device and then follow the same procedure as for the
switcher.
The PWM controller uses the MOSFET R
DS(on)
as the
sensing resistor to sense the MOSFET current and com-
pares to a programmed voltage which is set externally
via a resistor (Rcs) placed between the drain of the
MOSFET and the “CS+” terminal of the IC as shown in
the application circuit. For example, if the desired cur-
rent limit point is set to be 22A and from our previous
Pd = ( Vin - Vo ) * IL
Where :
Pd = Power Dissipation of the Linear Regulator
IL = Linear Regulator Load Current
selection, the maximum MOSFET R
the current sense resistor, Rcs is calculated as:
=19mW, then
DS(on)
For the 1.5V and 2A load:
Vcs=IcL*Rds=22*0.019=0.418V
Rcs=Vcs/Ib=(0.418V)/(200uA)=2.1kW
Where: Ib=200mA is the internal current setting of the
device
Pd = (3.3 - 1.5)*2=3.6 W
Assuming Tj-max=125°C
Ts = Tj - Pd * (qjc + qcs)
Ts = 125 - 3.6 * (1.8 + 0.05) = 118 °C
Switcher Timing Capacitor Selection
With the maximum heat sink temperature calculated in
the previous step, the heat-sink-to-air thermal resistance
(qsa) is calculated as follows:
The switching frequency can be programmed using an
external timing capacitor. The value of Ct can be ap-
proximated using the equation below:
Assuming Ta=35 °C
DT = Ts - Ta = 118 - 35 = 83 °C Temperature Rise
Above Ambient
3.5´ 10- 5
F
SW
»
CT
qsa = DT/Pd
qsa = 83 / 3.6 = 23 °C/W
Where:
Cr = Timing Capacitor
FSW = Switching Frequency
The same heat sink as the one selected for the switcher
MOSFETs is also suitable for the 1.5V regulator. It is
also possible to use TO-263 package or even the
MTD3055VL in D-Pak if the load current is less than
1.5A. For the 2.5V regulator since the dropout voltage is
only 0.8V and the load current is less than 0.5A, for
most applications the same MOSFET without heat sink
or for low cost applications, one can use PN2222A in
TO-92 or SOT-23 package.
If, FSW = 200kHz:
3.5 ´ 10- 5
200 ´ 103
C
T
»
= 175pF
LDO Power MOSFET Selection
LDO Regulator Component Selection
The first step in selecting the power MOSFET for the
linear regulators is to select its maximum R
on the input to output Dropout voltage and the maximum
load current.
based
Since the internal voltage reference for the linear regula-
tors is set at 1.5V for all devices, there is no need to
divide the output voltage for the 1.5V, GTL+ regulator.
DS(on)
R
= (V - Vo) / IL
DS(max)
in
For Vo = 1.5V, and V = 3.3V , IL=2A
in
R
= (3.3 - 1.5)/2= 0.9W
DS(max)
Rev. 1.2
12/8/00
4-14
IRU3004, IRU3005
For the 2.5V, Clock supply the resistor dividers are se-
lected per following:
14A, then the output voltage measured at the top of the
resistor divider which is also connected to the output
capacitors in this case, must be set at half of the 70 mV
or 35mV higher than the DAC voltage setting. To do this,
the top resistor of the resistor divider (R12 in the appli-
cation circuit) is set at 100W, and the R13 is calculated.
For example, if DAC voltage setting is for 2.8V and the
desired output under light load is 2.835V, then R13 is
calculated using the following formula:
Vo=(1+Rt/Rb)*Vref
Where:
Rt=Top resistor divider
Rb=Bottom resistor divider
Vref=1.5V typical
Assuming Rt=100W, for Vo=2.5V
Rb=Rt / [(Vo/Vref) - 1]
Rb=100 / [(2.5/1.5) - 1]=150W
R13= 100*{Vdac /(Vo - 1.004*Vdac)} [W]
R13= 100*{2.8 /(2.835 - 1.004*2.800)} = 11.76 kW
Select 11.8 kW , 1%
For 1.5V output, Rt can be shorted and Rb left open.
However, it is recommended to leave the resistor divid-
ers as shown in the typical application circuit so that
the output voltage can be adjusted higher to account for
the trace resistance in the final board layout.
Note: The value of the top resistor must not exceed 100W.
The bottom resistor can then be adjusted to raise the
output voltage.
It is also recommended that an external filter be added
on the linear regulators to reduce the amount of the high
frequency ripple at the output of the regulators. This can
simply be done by the resistor capacitor combination
as shown in the application circuit.
Soft Start Capacitor Selection
The soft start capacitor must be selected such that dur-
ing the start up when the output capacitors are charging
up, the peak inductor current does not reach the current
limit threshold. A minimum of 1mF capacitor insures this
for most applications. An internal 10mA current source
charges the soft start capacitor which slowly ramps up
the inverting input of the PWM comparator Vfb3. This
insures the output voltage to ramp at the same rate as
the soft start cap thereby limiting the input current. For
example, with 1mF and the 10mA internal current source
the ramp up rate is (DV/ Dt)=I/C = 1V/100mS. Assum-
ing that the output capacitance is 9000mF, the maxi-
mum start up current will be:
For IRU3005 that includes the resistor dividers internally,
Vfb1 can be directly connected to the output voltage
without any external resistors for a preset voltage of 2.5V.
The disadvantage is that the output voltage is not ad-
justable anymore. The application circuit given for
Pentium II can use either the IRU3004 or IRU3005 fam-
ily of parts for maximum flexibility.
Disabling the LDO Regulators
The LDO controllers can easily be disabled by connect-
ing the feedback pins, Vfb1 and Vfb2 to a voltage higher
than 2.5V such as 5V for all devices.
I=9000mF*(1V/100mS)=0.09A
Input Filter
Switcher Output Voltage Adjust
It is highly recommended to place an inductor between
the system 5V supply and the input capacitors of the
switching regulator to isolate the 5V supply from the
switching noise that occurs during the turn on and off of
the switching components. Typically an inductor in the
range of 1 to 3mH will be sufficient in this type of appli-
cation.
As it was discussed earlier, the trace resistance from
the output of the switching regulator to the Slot 1 can be
used to the circuit advantage and possibly reduce the
number of output capacitors, by level shifting the DC
regulation point when transitioning from light load to full
load and vice versa. To account for the DC drop, the
output of the regulator is typically set about half the DC
drop that results from light load to full load. For example,
if the total resistance from the output capacitors to the
Slot 1 and back to the GND pin of the part is 5mW and if
the total DI, the change from light load to full load is
Switcher External Shutdown
The best way to shutdown the switcher is to pull down
on the soft start pin using an external small signal tran-
sistor such as 2N3904 or 2N7002 small signal MOSFET.
This allows slow ramp up of the output, the same as the
power up.
Rev. 1.2
12/8/00
4-15
IRU3004, IRU3005
Layout Considerations
Switching regulators require careful attention to the lay-
out of the components, specifically power components
since they switch large currents. These switching com-
ponents can create large amount of voltage spikes and
high frequency harmonics if some of the critical compo-
nents are far away from each other and are connected
with inductive traces. The following is a guideline of how
to place the critical components and the connections
between them in order to minimize the above issues.
8) Place R11, C15, Q3 and C11 close to each other and
do the same with R9, C14, Q4 and C12.
Note: It is better to place the linear regulator compo-
nents close to the IC and then run a trace from the
output of each regulator to its respective load such
as 2.5V to the clock and 1.5V for GTL + termination.
However, if this is not possible then the trace from
the linear drive output pins, pins 2 and 20 must be
routed away from any high frequency data signals.
Start the layout by first placing the power components:
It is critical, to place high frequency ceramic capaci-
tors close to the clock chip and termination resistors
to provide local bypassing.
1) Place the input capacitors C3 and the high side
MOSFET, Q1 as close to each other as possible
2) Place the synchronous MOSFET, Q2 and the Q1 as
close to each other as possible with the intention
that the source of Q1 and drain of the Q2 has the
shortest length.
9) Place timing capacitor C1 close to pin 1 and soft
start capacitor C2 close to pin 13.
Component connections:
3) Place the snubber R4 & C7 between Q1 & Q2.
Note: It is extremely important that no data bus should
be passing through the switching regulator section spe-
cifically close to the fast transition nodes such as PWM
drives or the inductor voltage.
4) Place the output inductor, L2 and the output capaci-
tors, C10 between the MOSFET and the load with
output capacitors distributed along the slot 1 and
close to it.
Using the 4 layer board, dedicate on layer to GND, an-
other layer as the power layer for the 5V, 3.3V, Vcore,
1.5V and if it is possible for the 2.5V.
5) Place the bypass capacitors, C4 and C6 right next to
12V and 5V pins. C4 next to the 12V, pin 12 and C6
next to the 5V, pin 5.
Connect all grounds to the ground plane using direct
vias to the ground plane.
6) Place the controller IC such that the PWM output
drives, pins 9 and 11 are relatively short distance from
gates of Q1 and Q2.
Use large low inductance/low impedance plane to con-
nect the following connections either using component
side or the solder side.
7) Place resistor dividers, R7 & R8 close to pin 3, R12
& R13 (note 1) close to pin 14 and R14 and R15
(note 1) close to pin 20.
a) C3 to Q1 Drain
b) Q1 Source to Q2 Drain
c) Q2 drain to L2
Note 1: Although, the PWM controller does not re-
quire R12-15 resistors, and the feedback pins 3 and
14 can be directly connected to their respective out-
puts, they can be used to set the outputs slightly
higher to account for any output drop at the load due
to the trace resistance.
d) L2 to the output capacitors, C10
e) C10 to the slot 1
f) Input filter L1 to the C3
g) C9 to Q4 drain
h) C12 to the Q4 source
Connect the rest of the components using the shortest
connection possible.
Rev. 1.2
12/8/00
4-16
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