JANSR2N7423U [INFINEON]
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1); 抗辐射功率MOSFET表面贴装（ SMD - 1 ）
| 型号： | JANSR2N7423U |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| 文件： | 总8页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91300D
IRHN9250
JANSR2N7423U
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7423U
JANSF2N7423U
IRHN9250
100K Rads (Si)
0.315Ω
0.315Ω
-14A
-14A
IRHN93250 300K Rads (Si)
SMD-1
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
LowTotal Gate Charge
ProtonTolerant
SimpleDriveRequirements
EaseofParalleling
Hermetically Sealed
Surface Mount
CeramicPackage
LightWeight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-14
-9.0
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
-56
DM
@ T = 25°C
P
D
150
W
W/°C
V
C
1.2
V
GS
Gate-to-SourceVoltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-14
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
AR
dv/dt
-41
V/ns
T
-55 to 150
J
oC
g
T
STG
StorageTemperature Range
PCKG Mounting Surface Temp.
Weight
300 ( for 5s)
2.6 (typical)
For footnotes refer to the last page
www.irf.com
1
06/06/03
IRHN9250, JANSR2N7423U
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-200
—
—
—
—
V
V
= 0V, I =-1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
-0.24
DSS
J
D
R
Static Drain-to-Source On-State
—
—
—
—
—
—
—
—
0.315
0.33
-4.0
—
V
= -12V, I = -9.0A➀
= -12V, I = -14A➀
GS D
DS(on)
GS D
Ω
Resistance
V
V
Gate ThresholdVoltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
4.0
—
V
V
= V , I = -1.0mA
GS(th)
DS
GS
D
Ω
g
fs
S ( )
V
DS
>-15V, I
= -9.0A ➀
DS
I
-25
V
= -160V ,V =0V
DS GS
DSS
µA
—
-250
V
= -160V,
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
200
45
V
= -20V
GSS
GS
nA
nC
I
V
= 20V
GSS
GS
Q
V
=-12V, I = -14A
GS D
g
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
DS
= -100V
gs
Q
85
60
gd
t
V
= -100V, I = -14A,
d(on)
DD
GS
D
t
t
t
240
225
220
—
V
=-12V, R = 2.35Ω
r
G
ns
Turn-Off Delay Time
Fall Time
d(off)
f
L
+ L
Total Inductance
S
D
nH
Measured from the center of
drain pad to center of source pad
C
Input Capacitance
—
—
—
4200
690
—
—
—
V
= 0V,V
= -25V
f = 1.0MHz
iss
GS DS
C
oss
C
rss
Output Capacitance
pF
Reverse Transfer Capacitance
160
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
-14
-56
S
A
I
Pulse Source Current (Body Diode) ➀
SM
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.6
775
7.2
V
T = 25°C, I = -14A, V
= 0V ➀
j
SD
S
GS
t
nS
µC
T = 25°C, I = -14A, di/dt ≤ -100A/µs
j
rr
F
Q
V
≤ -50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
6.6
0.83
—
thJC
thJ-PCB
°C/W
soldered to a 1” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHN9250, JANSR2N7423U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Min
Drain-to-Source Breakdown Voltage -200
100KRads(Si)1
300 K Rads (Si)2 Units
Test Conditions
Max
Min
Max
BV
—
-200
-2.0
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
GS
V
V
Gate Threshold Voltage
-2.0
—
-4.0
-100
100
-25
-5.0
-100
100
-25
= V , I = -1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero GateVoltage Drain Current
V
GS
V
GS
= -20V
= 20 V
GSS
nA
I
—
—
GSS
I
—
—
µA
V =-160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
➀
—
0.317
—
0.317
Ω
V
= -12V, I =-9.0A
GS
D
DS(on)
R
DS(on)
➀
—
—
0.315
-3.6
—
—
0.315
-3.6
Ω
V = -12V, I =-9.0A
GS
D
V
SD
➀
V
V
= 0V, I = -14A
GS S
1. Part number IRHN9250 (JANSR2N7423U)
2. Part numbers IRHN93250 (JANSF2N7423U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
43
-200
-200
-200
-200
—
36.8
305
39
-200
-200
-160
-75
—
-250
-200
-150
-100
-50
Cu
Br
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHN9250, JANSR2N7423U
Pre-Irradiation
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
°
10
10
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
100
3.0
-14A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
-12V
=
V
20µs PULSE WIDTH
GS
10
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig3. TypicalTransferCharacteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHN9250, JANSR2N7423U
20
16
12
8
8000
I
D
= -14 A
V
= 0V,
f = 1MHz
C
GS
-
C
= C + C
SHORTED
V
V
V
= 160V
iss
gs
gd ,
gd
ds
DS
DS
DS
-
C
= C
gd
= 100V
rss
-
C
= C + C
ds
= 40V
oss
6000
C
iss
4000
2000
0
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
50
100
150
200
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig6. TypicalGateChargeVs.
Fig5. TypicalCapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
°
T = 25 C
J
100us
1ms
°
T = 25 C
10ms
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.0
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig8. MaximumSafeOperatingArea
Fig7. TypicalSource-DrainDiode
ForwardVoltage
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5
IRHN9250, JANSR2N7423U
Pre-Irradiation
RD
15
12
9
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig10a. SwitchingTimeTestCircuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
V
DS
Fig9. MaximumDrainCurrentVs.
CaseTemperature
Fig10b. SwitchingTimeWaveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHN9250, JANSR2N7423U
L
V
D S
1200
1000
800
600
400
200
0
I
D
TOP
-6.3A
-8.9A
-14A
D .U .T
R
G
V
D D
A
BOTTOM
I
A S
D R IV E R
V
GS
-
0.01
Ω
t
p
15V
Fig12a. UnclampedInductiveTestCircuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig12c. MaximumAvalancheEnergy
Vs.DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
Fig13a. BasicGateChargeWaveform
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7
IRHN9250, JANSR2N7423U
Foot Notes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -50V, starting T = 25°C, L= 5.1mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -14A, V
= -12V
L
GS
➀ Total Dose Irradiation with V
Bias.
= 0 during
➀ I
≤ -14A, di/dt ≤ -600A/µs,
≤ -200V, T ≤ 150°C
DS
SD
DD
-160 volt V
applied and V
V
DS
GS
J
irradiation per MlL-STD-750, method 1019, condition A.
CaseOutlineandDimensions—SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/03
8
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