JANSR2N7466U3 [INFINEON]
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN;
| 型号： | JANSR2N7466U3 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93830B
IRHNJ7430SE
JANSR2N7466U3
500V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/676
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNJ7430SE 100K Rads (Si) 1.77Ω 4.4A JANSR2N7466U3
SMD-0.5
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
4.4
2.8
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
17.6
75
DM
@ T = 25°C
P
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
150
mJ
A
AS
I
4.4
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
2.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0(Typical)
For footnotes refer to the last page
www.irf.com
1
02/07/03
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
500
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.61
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.77
Ω
V = 12V, I = 2.8A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.5
0.8
—
—
—
—
—
4.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 2.8A ➀
DS
I
50
250
V
= 400V ,V =0V
DSS
DS GS
µA
—
V
= 400V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
40
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 4.4A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
7.0
18
V
= 250V
DS
t
t
t
t
20
V
DD
V
GS
= 250V, I = 4.4A,
D
65
60
=12V, R = 7.5Ω
G
ns
d(off)
f
60
L
+ L
Total Inductance
—
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
Output Capacitance
—
—
—
570
150
50
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
4.4
S
A
Pulse Source Current (Body Diode) ➀
17.6
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.2
600
3.8
V
T = 25°C, I = 4.4A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
µC
T = 25°C, I = 4.4A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
1.67
—
thJC
°C/W
Junction-to-PC board
6.9
soldered to a 2” square copper-clad board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ7430SE, JANSR2N7466U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
500
2.0
—
—
4.5
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
50
V
= 20V
GS
GSS
nA
µA
I
—
V
= -20V
GS
GSS
I
—
V
= 400V,V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
DS(on)
—
1.77
Ω
V
GS
= 12V, I = 2.8A
D
R
DS(on)
—
—
1.77
1.2
Ω
V
= 12V, I = 2.8A
D
GS
V
Diode Forward Voltage
V
V
= 0V, I = 4.4A
D
GS
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
43
39
375
350
375
350
375
350
375
325
375
300
36.8
305
400
300
200
100
0
Cu
Br
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
100
10
1
100
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
1
BOTTOM 5.0V
BOTTOM 5.0V
0.1
0.01
5.0V
5.0V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 25 C
J
T = 150 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
44.4A
=
I
D
°
T = 150 C
J
1
°
T = 25 C
J
0.1
0.01
= 50V
20µs PULSE WIDTH
V
DS
V
= 12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
7
9
11 13
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHNJ7430SE, JANSR2N7466U3
1200
20
16
12
8
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
4.4A
=
I
D
V
V
V
= 400V
= 250V
= 100V
C
= C + C
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
900
600
300
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
8
16
24
32
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1
°
T = 25 C
J
1ms
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.4
10
100
1000
0.8
1.2
1.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
RD
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ7430SE, JANSR2N7466U3
250
200
150
100
50
I
D
TOP
2.0A
2.8A
BOTTOM 4.4A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHNJ7430SE, JANSR2N7466U3
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 50V, starting T = 25°C, L=15.5 mH
J
GS
DS
DD
Peak I = 4.4A, V
irradiation per MIL-STD-750, method 1019, condition A.
= 12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
≤ 4.4A, di/dt ≤ 260A/µs,
DS
applied and V = 0 during
SD
DD
400 volt V
DS
V
≤ 500V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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