PTFA220041MV4R1KXUMA1 [INFINEON]

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz;
PTFA220041MV4R1KXUMA1
型号: PTFA220041MV4R1KXUMA1
厂家: Infineon    Infineon
描述:

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

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PTFA220041M  
Confidential, Limited Internal Distribution  
High Power RF LDMOS Field Effect Transistor  
4 W, 28 V, 700 – 2200 MHz  
Description  
The PTFA220041M is an unmatched 4-watt LDMOS FET  
intended for power amplifier applications in the 700 MHz to 2200 MHz  
operating range. This LDMOS device offers excellent gain, efficiency  
and linearity performance in a small, overmolded plastic package.  
PTFA220041M  
Package PG-SON-10  
Two-tone Drive-up  
VDD = 28 V, IDQ = 50 mA,  
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz  
Features  
Typical two-carrier WCDMA performance,  
1842 MHz, 8 dB PAR  
- P = 27 dBm Avg  
21  
20  
19  
18  
17  
60  
50  
40  
30  
20  
OUT  
- ACPR = –44 dBc  
Typical CW performance, 1842 MHz, 28 V  
- P  
= 37 dBm  
OUT  
- Efficiency = 53.5%  
- Gain = 17.9 dB  
Gain  
Typical CW performance, 940 MHz, 28 V  
- P  
= 37.5 dBm  
OUT  
- Efficiency = 57%  
- Gain = 19.7 dB  
Efficiency  
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)  
output power  
33  
34  
35  
36  
37  
38  
39  
Integrated ESD protection  
Excellent thermal stability  
Pb-free and RoHS compliant  
Output Power, PEP (dBm)  
RF Characteristics  
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)  
V
= 28 V, I  
= 50 mA, P  
= 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz  
DD  
DQ  
OUT  
Characteristic  
Gain  
Symbol  
Min  
18.5  
35  
Typ  
19  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
IMD  
IRL  
37.5  
–29  
–8  
%
Intermodulation Distortion  
Input Return Loss  
–28  
–7  
dBc  
dB  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet – DRAFT ONLY 1 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
RF Characteristics (cont.)  
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)  
V
DD  
= 28 V, I  
= 50 mA, P = 5 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz  
DQ  
OUT  
Characteristic  
Gain  
Symbol  
Min  
Typ  
18.5  
37  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
IMD  
IRL  
%
Intermodulation Distortion  
Input Return Loss  
–30  
–10  
dBc  
dB  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
On-State Resistance  
V
GS  
= 0 V, I = 10 µA  
V
(BR)DSS  
DS  
V
V
= 28 V, V = 0 V  
GS  
I
1.0  
µA  
Ω
DS  
DSS  
= 10 V, V = 0.1 A  
DS  
R
DS(on)  
2.01  
2.7  
GS  
Operating Gate Voltage  
Gate Leakage Current  
V
= 28 V, I  
= 50 mA  
V
GS  
2.1  
3.1  
1.0  
V
DS  
DQ  
V
GS  
= 10 V, V = 0 V  
I
GSS  
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Junction Temperature  
Storage Temperature Range  
V
DSS  
V
GS  
–0.5 to +12  
175  
V
T
°C  
J
T
STG  
–40 to +150  
5.5  
°C  
Thermal Resistance (T  
= 70°C, 5 W CW)  
R
θ
°C/W  
CASE  
JC  
Moisture Sensitivity Level  
Level  
Test Standard  
Package Temperature  
Temperature Unit  
3
IPC/JEDEC J-STD-020  
260  
°C  
Ordering Information  
Type and Version  
Order Code  
Package and Description  
Shipping  
PTFA220041M V4 R1K  
PTFA220041MV4R1KXUMA1  
PG-SON-10, molded plastic, SMD Tape & Reel, 1,000 pcs  
Data Sheet – DRAFT ONLY  
2 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Typical Performance, 1842 MHz (data taken in Infineon test fixture)  
Two-carrier WCDMA 3GPP Drive-up  
Two-carrier WCDMA 3GPP  
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP  
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
VDD = 28 V, IDQ = 50 mA, 3GPP WCDMA,  
PAR = 8.0 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
20  
19  
18  
17  
16  
15  
50  
Gain  
40  
30  
20  
10  
0
IM3 Lower  
IM3 Upper  
Efficiency  
ACPR  
25  
27  
29  
31  
33  
35  
25  
27  
29  
31  
33  
35  
Output Power (dBm)  
Output Power (dBm)  
Power Sweep, CW  
Gain & Efficiency vs. Output Power  
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz  
Two-carrier WCDMA 3GPP Drive-up  
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP  
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
0
-10  
-20  
-30  
-40  
-50  
50  
20  
19  
18  
17  
16  
15  
65  
55  
45  
35  
25  
15  
Gain  
40  
30  
20  
10  
0
IMD Up  
Efficiency  
Efficiency  
IMD Low  
33  
ACPR  
30  
31  
32  
33  
34  
35  
36  
37  
38  
25  
27  
29  
31  
35  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet – DRAFT ONLY  
3 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Typical Performance, 1842 MHz (cont.)  
Two-tone Drive-up  
VDD = 28 V, IDQ = 50 mA,  
Two-tone Gain vs. Output Power  
VDD = 28 V, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz  
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz  
-15  
-20  
70  
60  
50  
40  
30  
20  
20.0  
19.5  
19.0  
18.5  
18.0  
17.5  
17.0  
16.5  
16.0  
IDQ = 75 mA  
IDQ = 63 mA  
IDQ = 50 mA  
IDQ = 25 mA  
IMD3  
-25  
-30  
Efficiency  
-35  
-40  
33  
34  
35  
36  
37  
38  
39  
33  
34  
35  
36  
37  
38  
39  
Output Power, PEP (dBm)  
Output Power (dBm)  
Two-tone Broadband  
Small Signal CW  
Gain, Efficiency & RL vs. Frequency  
VDD = 28V, IDQ = 50 mA, avg POUT = 2 W,  
tone spacing = 100 kHz  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 50 mA  
70  
60  
50  
40  
30  
20  
10  
5
20  
18  
16  
14  
12  
10  
0.0  
RL  
-5  
-2.0  
-4.0  
-6.0  
-8.0  
-10.0  
Gain  
IRL  
-15  
-25  
-35  
-45  
-55  
Efficiency  
IMD3  
1920  
Gain  
1840  
1720  
1760  
1800  
1880  
1960  
1692  
1792  
1892  
1992  
Frequency (MHz)  
Frequency (MHz)  
Data Sheet – DRAFT ONLY  
4 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Typical Performance, 1842 MHz (cont.)  
Intermodulation Distortion  
vs. Tone Spacing  
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz,  
CW Performance  
Gain & Efficiency vs. Output Power  
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz  
P
OUT (PEP) = 4 W  
-10  
-20  
-30  
-40  
-50  
-60  
22  
60  
50  
40  
30  
20  
Gain  
20  
3rd Order  
5th  
18  
+85°C  
+25°C  
–30°C  
16  
14  
7th  
20  
Efficiency  
30  
31  
32  
33  
34  
35  
36  
37  
38  
0
40  
60  
80  
100  
Tone Spacing (MHz)  
Output Power (dBm)  
Intermodulation Distortion  
vs. Output Power  
VDD = 28 V, IDQ = 50 mA,  
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz  
-10  
-20  
-30  
-40  
-50  
-60  
3rd Order  
5th  
7th  
32  
34  
36  
38  
40  
Output Power, PEP (dBm)  
Data Sheet – DRAFT ONLY  
5 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Broadband Circuit Impedance, 1842 MHz  
Frequency  
MHz  
720  
Z Source Ω  
Z Load Ω  
R
jX  
R
jX  
D
2.4  
1.8  
1.6  
1.6  
1.6  
1.6  
1.6  
2.1  
2.1  
1.8  
2.1  
2.5  
2.0  
16.9  
13.4  
11.8  
12.0  
10.6  
10.1  
10.3  
3.2  
45.2  
31.0  
21.3  
22.1  
14.5  
15.2  
16.1  
6.8  
25.2  
15.2  
18.2  
18.4  
21.5  
21.4  
18.9  
12.1  
10.9  
10.6  
8.1  
Z Source  
Z Load  
820  
869  
G
894  
920  
S
940  
960  
1805  
1880  
1930  
1990  
2110  
2170  
2.2  
6.4  
1.3  
6.3  
1.5  
4.3  
2.0  
4.9  
8.4  
2.0  
4.4  
8.8  
.
0
Z = 50 Ω  
0
4
.
0
5
0
.
0
5
4
.
Z Source  
0
720 MHz  
3
.
0
>
Z Load  
-
-
-
2
.
0
R
O
T
A
R
E
N
E
2170 MHz  
G
D
R
A
720 MHz  
1
.
W
0
O
T
S
H
T
G
N
E
L
2170 MHz  
E
V
0
.
D
A
O
Data Sheet – DRAFT ONLY  
6 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 1842 MHz  
VDD  
28 V  
R804  
S5  
2000 Ohm  
8
4
1
In  
Out  
C801  
NC  
2
NC  
5
7
3
6
TL103  
1000000 pF  
DCVS  
V1  
C802  
1000000 pF  
R805  
10 Ohm S3  
TL105  
TL107  
TL101  
3
3
1
2
4
C803  
1000000 pF  
S2  
R801  
1200 Ohm  
R803  
500 Ohm  
2
L1  
22 nH  
C
S4  
4
1
B
3
E
R802  
1300 Ohm  
TL106  
C104  
7.5 pF  
C105  
7.5 pF  
R102  
10 Ohm  
TL113  
TL116  
C101  
6.2 pF  
C103  
12 pF  
TL118  
TL104  
TL109  
TL108  
TL102  
TL1142  
2
2
TL110  
TL111  
1 2  
TL117  
3
3
3
1
1
1
GATE DUT  
RF_IN  
3
4
4
4
C102  
4.7 pF  
TL115  
TL112  
Er=3.48  
H=20 mil  
RO/RO4350B1  
C106  
7.5 pF  
C107  
7.5 pF  
Reference circuit input schematic for ƒ = 1842 MHz  
TL224  
TL225  
TL226  
TL216  
TL215  
TL201  
TL214  
C204  
100000 pF  
C206  
2200000 pF  
C205  
12 pF  
TL223  
TL207  
TL206  
TL202  
TL211  
TL205  
3
3
3
V
28 V  
DD  
2
1
2
1
2
1
2
1
3
TL203  
L2  
22 nH  
TL204  
TL212  
C207  
12 pF  
TL218  
TL221  
TL217  
TL210  
TL208  
TL213  
TL220  
       
TL222  
TL219  
   
TL209  
3
2
1
1
2
1
2
1
2
DRAIN DUT  
RF_OUT  
3
3
3
C203  
4.7 pF  
C201  
3.6 pF  
C202  
4.7 pF  
Reference circuit output schematic for ƒ = 1842 MHz  
Data Sheet – DRAFT ONLY  
7 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 1842 MHz (cont.)  
Electrical Characteristics at 1842 MHz  
Transmission  
Electrical  
Dimensions: mm  
Dimensions: mils  
Line  
Characteristics  
Input  
TL101  
0.005 λ, 41.75 Ω  
0.021 λ, 51.98 Ω  
W = 1.524, L = 0.508  
W = 1.087, L = 2.108  
W = 1.524  
W = 60, L = 20  
W = 43, L = 83  
W = 60  
TL102  
TL103  
TL104  
0.019 λ, 25.04 Ω  
0.052 λ, 41.75 Ω  
0.013 λ, 41.75 Ω  
0.015 λ, 54.17 Ω  
0.033 λ, 51.98 Ω  
0.149 λ, 51.98 Ω  
0.034 λ, 51.98 Ω  
0.008 λ, 51.98 Ω  
W = 3.048, L = 1.778  
W = 1.524, L = 5.08  
W = 1.524, L = 1.27  
W = 1.016, L = 1.524  
W = 1.087, L = 3.264  
W = 1.087, L = 14.681  
W = 1.087, L = 3.378  
W1 = 1.087, W2 = 1.087, W3 = 0.813  
W = 0, L = 0  
W = 120, L = 70  
W = 60, L = 200  
W = 60, L = 50  
W = 40, L = 60  
W = 43, L = 129  
W = 43, L = 578  
W = 43, L = 133  
W1 = 43, W2 = 43, W3 = 32  
W = 0, L = 0  
TL105  
TL106  
TL107  
TL108  
TL109  
TL110  
TL111  
TL112, TL113, TL115, TL116  
TL114, TL 117  
W1 = 1.087, W2 = 0.813, W3 = 1.087  
W4 = 0.813  
W1 = 43, W2 = 32, W3 = 43,  
W4 = 32  
TL118  
W1 = 3.048, W2 = 0.762, W3 = 3.048,  
W4 = 0.762  
W1 = 120, W2 = 30, W3 = 120,  
W4 = 30  
Output  
TL201, TL225, TL226  
TL202  
W1 = 0.025, W2 = 0.025  
W1 = 1.524, W2 = 1.524, W3 = 1.27  
W = 1.524, L = 0.508  
W1 = 1, W2 = 1  
0.013 λ, 41.75 Ω  
0.005 λ, 41.75 Ω  
0.016 λ, 41.75 Ω  
0.039 λ, 41.75 Ω  
0.016 λ, 41.75 Ω  
0.008 λ, 25.04 Ω  
W1 = 60, W2 = 60, W3 = 50  
W = 60, L = 20  
TL203  
TL204  
W = 1.524, L = 1.524  
W = 60, L = 60  
TL205  
W1 = 1.524, W2 = 1.524, W3 = 3.81  
W1 = 1.524, W2 = 1.524, W3 = 1.524  
W1 = 3.048, W2 = 3.048, W3 = 0.762  
W = 1.087, W2 = 3.048  
W = 3.048, L = 1.778  
W1 = 60, W2 = 60, W3 = 150  
W1 = 60, W2 = 60, W3 = 60  
W1 = 120, W2 = 120, W3 = 30  
W = 43, W2 = 120  
W = 120, L = 70  
TL206, TL207  
TL208  
TL209  
TL210  
0.019 λ, 25.04 Ω  
0.014 λ, 41.75 Ω  
0.013 λ, 63.89 Ω  
0.031 λ, 51.98 Ω  
0.163 λ, 47.12 Ω  
0.074 λ, 47.12 Ω  
0.076 λ, 15.92 Ω  
0.123 λ, 51.98 Ω  
0.033 λ, 51.98 Ω  
0.008 λ, 51.98 Ω  
0.060 λ, 51.98 Ω  
0.016 λ, 41.75 Ω  
0.149 λ, 47.12 Ω  
TL211  
W = 1.524, L = 1.346  
W = 60, L = 53  
TL212  
W = 0.762, L = 1.27  
W = 30, L = 50  
TL213  
W = 1.087, L = 3.073  
W = 43, L = 121  
TL214  
W = 1.27, L = 15.926  
W = 50, L = 627  
TL215  
W = 1.27, L = 7.29  
W = 50, L = 287  
TL216  
W = 5.283, L = 6.986  
W = 208, L = 275  
W = 43, L = 477  
TL217  
W = 1.087, L = 12.103  
TL218  
W = 1.087, L = 3.264  
W = 43, L = 129  
TL219, TL221, TL222  
TL220  
W1 = 1.087, W2 = 1.087, W3 = 0.813  
W = 1.087, L = 5.867  
W1 = 43, W2 = 43, W3 = 32  
W = 43, L = 231  
TL223  
W = 1.524, L = 1.524  
W = 60, L = 60  
TL224  
W = 1.27, L = 14.554  
W = 50, L = 573  
Data Sheet – DRAFT ONLY  
8 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 1842 MHz (cont.)  
VDD  
C801 R802 C803  
802  
R801  
S4  
S5  
R804  
R803  
S3  
C206  
C204  
S2  
R805  
C205  
L2  
C105  
C104  
L1  
DUT  
C103  
C207  
C102  
C106  
C201  
C101 R102  
C202  
C203  
C107  
(73)  
PTFA220041M  
RO4350, .020  
Reference circuit assembly diagram (not to scale)  
Data Sheet – DRAFT ONLY  
9 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 1842 MHz (cont.)  
Circuit Assembly Information  
DUT  
PTFA220041M  
LDMOS Transistor  
PCB  
LTN/PTFA220041M  
0.508 mm [.020"] thick, er = 3.48  
Rogers 4350, 1 oz. copper  
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower  
Component  
Description  
Manufacturer  
P/N  
Input  
C101  
Chip capacitor, 6.2 pF  
Chip capacitor, 4.7 pF  
Chip capacitor, 12 pF  
Chip capacitor, 7.5 pF  
Chip capacitor, 1.0 µF  
Inductor, 22 nH  
ATC  
100A6R2CW150X  
100A4R7CW150X  
100A120JW150X  
100A7R5CW150X  
445-1411-2-ND  
0805HT-22NX_BG  
P10ECT-ND  
C102  
ATC  
C103  
ATC  
C104, C105, C106, C107  
ATC  
C801, C802, C803  
Digi-Key  
Coilcraft  
L1  
R102, R805  
R801  
R802  
R803  
R804  
S2  
Resistor, 10 Ω  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Murata  
Resistor, 1200 Ω  
P1.2KECT-ND  
P1.3KECT-ND  
P500ECT-ND  
Resistor, 1300 Ω  
Resistor, 500 Ω  
Resistor, 2000 Ω  
P2.0KECT-ND  
NFM18PS105R0J3  
3224W-202ECT-ND  
BCP56  
EMI Suppression Capacitor  
Potentiometer, 2k Ω  
Transistor  
S3  
Digi-Key  
Infineon Technologies  
National Semiconductor  
S4  
S5  
Voltage regulator  
LM7805  
Output  
C201  
Chip capacitor, 3.6 pF  
Chip capacitor, 4.7 pF  
Chip capacitor, 0.1 µF  
Chip capacitor, 12 pF  
Chip capacitor, 2.2 µF  
Inductor, 22 nH  
ATC  
100A3R6CW150X  
100A4R7CW150X  
PCC104BCT-ND  
100A120JW150X  
445-1447-2-ND  
C202, C203  
C204  
ATC  
Digi-Key  
ATC  
C205, C207  
C206  
Digi-Key  
Coilcraft  
L2  
0805HT-22NX_BG  
Data Sheet – DRAFT ONLY  
10 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Typical Performance, 940 MHz  
Power Sweep, CW  
Gain & Efficiency vs. Output Power  
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz  
Two-carrier WCDMA 3GPP  
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz, 3GPP  
WCDMA, P/AR = 8:1, 10 MHz carrier spacing  
BW 3.84 MHz  
22  
21  
20  
19  
18  
17  
70  
60  
50  
40  
30  
20  
22  
50  
40  
30  
20  
10  
0
Gain  
21  
Gain  
20  
Efficiency  
19  
Efficiency  
18  
17  
30  
31  
32  
33  
34  
35  
36  
37  
38  
25  
27  
29  
31  
33  
35  
Output Power (dBm)  
Output Power (dBm)  
Two-tone Drive-up  
Two-tone Drive-up  
VDD = 28 V, IDQ = 50 mA,  
VDD = 28 V, IDQ = 50 mA,  
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz  
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz  
22  
21  
20  
19  
18  
60  
50  
40  
30  
20  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
55  
50  
45  
40  
35  
30  
25  
20  
Gain  
Efficiency  
Efficiency  
IMD3  
33  
34  
35  
36  
37  
38  
39  
33  
34  
35  
36  
37  
38  
39  
Output Power, PEP (dBm)  
Output Power, PEP (dBm)  
Data Sheet – DRAFT ONLY  
11 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Typical Performance, 940 MHz (cont.)  
Intermodulation Distortion  
vs. Output Power  
VDD = 28 V, IDQ = 50 mA,  
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz  
Small Signal CW  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 50 mA  
-10  
22  
20  
18  
16  
14  
12  
0
Gain  
-20  
-5  
3rd Order  
-30  
-10  
-15  
-20  
-25  
-40  
-50  
-60  
5th  
IRL  
7th  
790  
890  
990  
1090  
32  
34  
36  
38  
40  
Output Power, PEP (dBm)  
Frequency (MHz)  
See reference circuit for 940 MHz, next page  
Data Sheet – DRAFT ONLY  
12 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 940 MHz  
V
DD  
28 V  
R804  
2000 Ohm  
S5  
8
4
1
In  
Out  
NC  
2
NC  
5
C801  
1000 pF  
3
6
7
TL111  
DCVS  
V1  
C802  
1000 pF  
R805  
10 Ohm  
S3  
TL113  
TL112  
TL115  
3
3
1
2
4
S2  
C803  
1000 pF  
R801  
1200 Ohm  
R803  
500 Ohm  
L1  
22 nH  
2
C
S4  
4
1
B
3
E
R802  
1300 Ohm  
TL116  
R102  
10 Ohm  
R101  
1.3 Ohm  
C103  
62 pF  
TL101  
TL104  
TL105  
TL114  
TL107  
TL106  
TL102  
TL103  
TL110  
3
2
1
2
1
2
1
1
2
RF_IN  
GATE DUT  
3
3
3
TL108  
C104  
10 pF  
TL109  
C102  
22 pF  
C101  
16 pF  
Er=3.48  
H=20 mil  
RO/RO4350B1  
Reference circuit input schematic for ƒ = 940 MHz  
TL201  
TL202  
TL212 TL206  
TL211  
TL205  
TL204  
C201  
100000 pF  
C202  
2200000 pF  
C204  
62 pF  
TL213  
TL218  
TL217  
TL203  
TL222  
TL216  
3
3
3
V
DD  
28 V  
2
1
2
1
2
1
2
1
3
TL214  
L2  
22 nH  
TL215  
TL223  
C205  
62 pF  
L3  
4.3 nH  
TL208  
TL207  
TL221 TL219  
TL224  
TL210  
TL209  
TL220  
3
2
1
1
2
DRAIN DUT  
RF_OUT  
3
C203  
3.6 pF  
Reference circuit output schematic for ƒ = 940 MHz  
Data Sheet – DRAFT ONLY  
13 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 940 MHz (cont.)  
Electrical Characteristics at 940 MHz  
Transmission  
Electrical  
Dimensions: mm  
Dimensions: mils  
Line  
Characteristics  
Input  
TL101  
0.004 λ, 24.85 Ω  
0.004 λ, 51.66 Ω  
0.017 λ, 51.66 Ω  
0.038 λ, 51.66 Ω  
0.047 λ, 51.66 Ω  
0.004 λ, 51.66 Ω  
0.000 λ, 144.28 Ω  
0.019 λ, 51.66 Ω  
W1 = 3.048, W2 = 3.048, W3 =0.762  
W1 = 1.087, W2 = 1.087, W3 = 0.813  
W = 1.087, L = 3.264  
W1 = 120, W2 = 120, W3 = 30  
W1 = 43, W2 = 43, W3 = 32  
W = 43, L = 129  
W = 43, L = 289  
W = 43, L = 360  
W1 = 43, W2 = 43, W3 = 30  
W = 1, L = 0  
TL102, TL103  
TL104  
TL105  
W = 1.087, L = 7.341  
TL106  
W = 1.087, L = 9.144  
TL107  
W1 = 1.087, W2 = 1.087, W3 = 0.762,  
W = 0.025, L = 0.000  
TL108, TL109  
TL110  
W = 1.087, L = 3.734  
W = 43, L = 147  
W = 60  
TL111  
W = 1.524  
TL112  
0.008 λ, 53.85 Ω  
0.027 λ, 41.47 Ω  
0.010 λ, 24.85 Ω  
0.003 λ, 41.47 Ω  
0.007 λ, 41.47 Ω  
W = 1.016, L = 1.524  
W = 40, L = 60  
TL113  
W = 1.524, L = 5.080  
W = 60, L = 200  
W = 120, L = 70  
W = 60, L = 20  
TL114  
W = 3.048, L = 1.778  
TL115  
W = 1.524, L = 0.508  
TL116  
W = 1.524, L = 1.270  
W = 60, L = 50  
Output  
TL201  
0.076 λ, 46.82 Ω  
W = 1.270, L = 14.554  
W = 50, L = 573  
TL202  
W1 = 0.025, W2 = 0.025  
W1 = 1.524, W2 = 1.524, W3 = 1.270  
W = 1.270, L = 15.927  
W1 = 1, W2 = 1  
TL203  
0.007 λ, 41.47 Ω  
0.083 λ, 46.82 Ω  
0.038 λ, 46.82 Ω  
0.039 λ, 15.79 Ω  
0.063 λ, 51.66 Ω  
0.017 λ, 51.66 Ω  
0.004 λ, 51.66 Ω  
0.046 λ, 51.66 Ω  
W1 = 60, W2 = 60, W3 = 50  
W = 50, L = 627  
TL204  
TL205  
W = 1.270, L = 7.290  
W = 50, L = 287  
TL206  
W = 5.283, L = 6.986  
W = 208, L = 275  
W = 43, L = 477  
TL207  
W = 1.087, L = 12.103  
TL208  
W = 1.087, L = 3.264  
W = 43, L = 129  
TL209  
W1 = 1.087, W2 = 1.087, W3 = 0.813  
W =1.087, L = 8.852  
W1 = 43, W2 = 43, W3 = 32  
W = 43, L = 349  
TL210  
TL211, TL212  
TL213, TL215  
TL214  
W1 = 0.025, W2 = 0.025  
W = 1.524, L = 1.524  
W1 = 1, W2 = 1  
0.008 λ, 41.47 Ω  
0.003 λ, 41.47 Ω  
0.020 λ, 41.47 Ω  
0.008 λ, 41.47 Ω  
0.004 λ, 24.85 Ω  
W = 60, L = 60  
W = 1.524, L = 0.508  
W = 60, L = 20  
TL216  
W1 = 1.524, W2 = 1.524, W3 = 3.810  
W1 = 1.524, W2 = 1.524, W3 = 1.524  
W1 = 3.048, W2 = 3.048, W3 = 0.762  
W1 = 1.087, W2 = 3.048  
W = 3.048, L = 1.778  
W1 = 60, W2 = 60, W3 = 150  
W1 = 60, W2 = 60, W3 = 60  
W1 = 120, W2 = 120, W3 = 30  
W1 = 43, W2 = 120  
W = 120, L = 70  
TL217, TL218  
TL219  
TL220  
TL221  
0.010 λ, 24.85 Ω  
0.007 λ, 41.47 Ω  
0.007 λ, 63.55 Ω  
0.004 λ, 51.66 Ω  
TL222  
W = 1.524, L = 1.346  
W = 60, L = 53  
TL223  
W = 0.762, L = 1.270  
W = 30, L = 50  
TL224  
W = 1.087, L = 0.851  
W = 43, L = 33  
Data Sheet – DRAFT ONLY  
14 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 940 MHz (cont.)  
VDD  
C801 R802 C803  
C802  
R801  
S4  
S5  
R804  
R803  
S2  
S3  
C202  
C201  
C204  
R805  
L2  
L1  
DUT  
C103  
C205  
C104  
C203  
L3  
C101  
R101 R102  
C102  
(73)  
PTFA220041M  
RO4350, .020  
Reference circuit assembly diagram (not to scale)  
Data Sheet – DRAFT ONLY  
15 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Reference Circuit, 940 MHz (cont.)  
Circuit Assembly Information  
DUT  
PTFA220041M  
LDMOS Transistor  
PCB  
LTN/PTFA220041M–9  
0.508 mm [.020"] thick, εr = 3.48  
Rogers 4350, 1 oz. copper  
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower  
Component  
Description  
Supplier  
P/N  
Input  
C101  
Chip capacitor, 16 pF  
Chip capacitor, 22 pF  
Chip capacitor, 62 pF  
Chip capacitor, 10 pF  
Chip capacitor, 1000 pF  
Inductor, 22 nH  
ATC  
100A160JW150X  
100A220JW150X  
100A620JW150X  
100A100JW150X  
PCC1772CT-ND  
0805HT-22NX_BG  
P1.3ECT-ND  
C102  
ATC  
C103  
ATC  
C104  
ATC  
C801, C802, C803  
Digi-Key  
Coilcraft  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Digi-Key  
Murata  
L1  
R101  
R102, R805  
R801  
R802  
R803  
R804  
S2  
Resistor, 1.3 Ω  
Resistor, 10 Ω  
P10ECT-ND  
Resistor, 1200 Ω  
Resistor, 1300 Ω  
Resistor, 500 Ω  
P1.2KECT-ND  
P1.3KECT-ND  
P5.0KECT-ND  
P2.0KECT-ND  
NFM18PS105R0J3  
3224W-202ECT-ND  
BCP56  
Resistor, 2000 Ω  
EMI Suppression Capacitor  
Potentiometer, 2k Ω  
Transistor  
S3  
Digi-Key  
Infineon Technologies  
National Semiconductor  
S4  
S5  
Voltage Regulator  
LM7805  
Output  
C201  
C202  
C203  
C204, C205  
L2  
Chip capacitor, 0.1 µF  
Chip capacitor, 2.2 µF  
Chip capacitor, 3.6 pF  
Chip capacitor, 62 pF  
Inductor, 22 nH  
Digi-Key  
Digi-Key  
ATC  
PCC104BCT-ND  
445-1447-2-ND  
100A3R6CW150X  
100A620JW150X  
0805HT-22NX_BG  
0603CS-4N3X_BG  
ATC  
Coilcraft  
Coilcraft  
L3  
Inductor, 4.3 nH  
Data Sheet – DRAFT ONLY  
16 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M  
Confidential, Limited Internal Distribution  
Package Outline Specifications  
Package PG-SON-10  
ꢃꢂꢅꢁ  
ꢀ>ꢂꢃꢈꢄ@ꢀꢈꢀ3/$&(6  
ꢅ;ꢀꢂꢇꢈꢃ  
ꢀ>ꢂꢃꢄꢈꢉ@ꢀꢈꢀ3/$&(6  
ꢁꢂꢃꢃ  
>ꢂꢄꢅꢆ@  
ꢄꢃ  
ꢂꢊꢄꢅ  
ꢀ>ꢂꢃꢇꢈꢄ@  
6
ꢁꢂꢃꢃ  
>ꢂꢄꢅꢆ@  
ꢈꢂꢋꢆ  
>ꢂꢄꢄꢆ@  
ꢈꢂꢇꢆ  
ꢀ>ꢂꢃꢋꢇ@  
ꢅ;ꢀꢂꢅꢄꢅ  
ꢀ>ꢂꢃꢈꢃꢇ@ꢀꢈꢀ3/$&(6  
,1'(;ꢀ  
,1'(;ꢀ  
0$5.,1*  
0$5.,1*  
ꢁ;ꢀꢃꢂꢉꢅ  
ꢀ>ꢂꢃꢈꢉ@ꢀꢈꢀ3/$&(6  
723ꢀ9,(:  
ꢃꢂꢇꢃ  
ꢀ>ꢂꢃꢄꢈ@  
ꢇꢂꢁꢃ  
ꢀ>ꢂꢄꢇꢁ@  
%27720ꢀꢀ9,(:  
ꢃꢂꢇꢊ  
ꢄꢂꢁꢈ  
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Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994  
2. Primary dimensions are mm; alternate dimensions are inches  
3. All tolerances ± 0.1 [.004]  
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm  
5. Pins: S source; 1 – 5 gate, 6 - 10 = drain  
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet – DRAFT ONLY  
17 of 18  
Rev. 10.1, 2016-06-01  
PTFA220041M V4  
Confidential, Limited Internal Distribution  
Revision History  
Revision Date  
Data Sheet  
Advance  
Page  
all  
Subjects (major changes at each revision)  
Advance Specifications for product in development.  
Refine RF characteristics. Add package information (still preliminary).  
Update package information.  
01  
02  
03  
04  
2008-12-16  
2009-06-19  
2009-08-03  
2009-11-03  
Advance  
1, 2, 3  
1 – 3  
all  
Advance  
Production  
Firm specifications for this released product, including reference circuit and com-  
plete package outline information.  
05  
06  
07  
08  
09  
2009-18-18  
2010-01-19  
2010-04-15  
2010-06-07  
2011-04-01  
Production  
Production  
Production  
Production  
Production  
1116 Add 940 MHz performance and reference circuit information.  
2
2
6
Review and update specifications.  
Add moisture sensitivity table.  
Revise broadband circuit impedance.  
1
Update ESD information  
5, 12  
Remove CW performance graphs  
10  
2016-03-17  
2016-06-01  
Production  
Production  
2
Add current shipping and ordering information. Operating gate voltage adjusted.  
10.1  
all  
18  
Add revision state to footer  
Correct product version to V4  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-06-01  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2009 – 2016 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet – DRAFT ONLY  
18 of 18  
Rev. 10.1, 2016-06-01  

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