PTFA212401EV4 [INFINEON]
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN;
| 型号： | PTFA212401EV4 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, H-36260-2, 2 PIN 局域网 放大器 晶体管 |
| 文件： | 总11页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
PTFA212401F
Package H-37260-2
Features
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
•
Thermally-enhanced packages, Pb-free and
RoHS compliant
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
-30
-35
-40
-45
-50
-55
-60
35
30
25
20
15
10
5
ACPR Up
ACPR Low
•
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
Efficiency
36
38
40
42
44
46
48
•
•
Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
Average Output Power (dBm)
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
•
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
RF Characteristics
Two-CarrierWCDMA Measurements (tested in Infineon test fixture)
V
DD
= 30 V, I
= 1.6 A, P
= 50 W average
DQ
OUT
ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
1
2
Characteristic
Gain
Symbol
Min
14.8
26
Typ
15.8
28
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
%
Intermodulation Distortion
IMD
—
–35.0
–33
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
= 1.6 A, P
= 220 W PEP, ƒ = 2140 MHz, ƒ = 2141 MHz, tone spacing = 1 MHz
DQ
OUT
1
2
Characteristic
Gain
Symbol
Min
—
Typ
15.8
38.5
–28
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
—
%
Intermodulation Distortion
IMD
—
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
V
DS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
= 30 V, V
= 63 V, V
= 0 V
= 0 V
I
I
—
1.0
10.0
—
µA
µA
W
GS
GS
DSS
DSS
—
—
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
= 10 V, V = 0.1 V
R
DS(on)
—
0.03
2.5
—
DS
= 30 V, I
= 1.6 A
V
GS
2.0
—
3.0
1.0
V
DQ
= 10 V, V = 0 V
I
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
P
D
761
W
4.35
W/°C
°C
T
STG
–40 to +150
0.23
Thermal Resistance (T
Data Sheet
= 70°C, 50 W Average WCDMA)
R
qJC
°C/W
CASE
2 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Ordering Information
Type andVersion
PTFA212401E V4
PTFA212401F V4
Package Outline
H-36260-2
Package Description
Shipping
Tray
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
H-37260-2
Tray
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
series show IDQ
-30
40
35
30
25
20
15
10
-5
-10
-15
-20
-25
-30
-35
Return Loss
2.2 A
-35
-40
-45
-50
-55
2.0 A
1.8 A
Efficiency
Gain
1.4 A
1.6 A
42
2050
2080
2110
2140
2170
2200
34
36
38
40
44
46
Frequency (MHz)
Output Power, PEP (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion Products
Power Sweep, CW Conditions
vs. Tone Spacing
VDD = 30 V IDQ = 1600 mA , ƒ = 2140 MHz,
POUT = 53 dBm PEP
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz
-20
-25
-30
-35
-40
-45
-50
-55
17
65
55
45
35
25
15
16
3rd Order
Gain
15
14
7th
TCASE = 25°C
TCASE = 90°C
13
12
5th
25
Tone Spacing (MHz)
Efficiency
0
5
10
15
20
30
35
40
0
40
80 120
160
200
240
Output Power (W)
Intermodulation Distortion Products
vs. Output Power
Voltage Sweep
IDQ = 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz,
VDD = 30 V, IDQ = 1600 mA,
Output Power (PEP) = 53 dBm
ƒ1 = 2137.5 MHz, ƒ2 = 2142.5 MHz
-10
-20
-30
-40
-50
50
40
30
20
10
-20
-30
-40
-50
-60
Efficiency
Up
Low
IM3
IM5
IM3 Up
Gain
IM7
24
26
28
30
32
10
100
Output Power, PEP (W)
Supply Voltage (V)
Data Sheet
4 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power Levels
Power Gain vs. Power Sweep (CW) over
Temperature
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz,
VDD = 30 V, IDQ = 1500 mA, ƒ = 2140 MHz
single-carrier WCDMA input PAR = 7.5 dB
100
18
17
16
15
14
13
12
-15C
25C
10
48 dBm
1
85C
46 dBm
52 dBm
0.1
Input
51 dBm
50 dBm
0.01
0.001
1
2
3
4
5
6
7
8
1
10
100
1000
Peak-to-Average (dB)
Output Power (W)
Two-tone Drive-up
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA,
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
ƒ = 2140 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
35
30
25
20
15
10
5
-25
-30
-35
-40
-45
-50
-55
-60
-65
50
45
40
35
30
25
20
15
10
Efficiency
IM3
Efficiency
IM3
IM5
ACPR
IM7
34
36
38
40
42
44
46
48
44
46
48
50
52
54
Output Power, PEP (dBm)
Output Power, avg. (dBm)
Data Sheet
5 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
-20
0
20
40
60
80
100
Case Temperature (°C)
Broadband Circuit Impedance
2
.
Z0 = 50 W
0
R
D
E
Z Source
Z Load
Z Load
2200 M H z
2080 M H z
G
S
Z S o u rce
2080 M H z
2200 M H z
Frequency
MHz
Z Source W
Z Load W
R
jX
R
jX
2080
10.050
9.750
9.500
9.280
9.000
–4.250
–4.320
–4.380
–4.350
–4.460
1.140
1.080
1.090
1.130
1.450
2.07
2.38
2.65
2.89
3.11
2110
E
2140
2170
2
.
2200
Data Sheet
6 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit
0.001µF
R2
1.3K Ω
R1
1.2K Ω
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
2K Ω
R6
L1
5.1K Ω
R8
2K Ω
VDD
C5
0.1µF
C6
8.2pF
C15
1µF
C16
C17
0.1µF
C4
4.7µF
16V
C13
8.2pF 1µF
C14
C18
10µF
50V
C19
100µF
50V
2.2µF
R5
2K Ω
l8
l11
C27
0.3pF
C29
0.5pF
C31
0.7pF
C8
8.2pF
C33
8.2pF
DUT
J1
l1
l2
l3
l4
l5
l6
l7
l10
l13
l14
l15
l 16
l 17
l18
l19
C7
0.7pF
C9
1.3pF
C28
0.3pF
C30
0.5pF
C32
0.7pF
l9
l12
R7
5.1K Ω
L2
C11
0.1µF
C12
8.2pF
C20
8.2pF
C21
1µF
C22
1µF
C23
2.2µF
C24
0.1µF
C10
4.7µF
16V
C25
10µF
50V
C26
100µF
50V
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PCB
PTFA212401E or PTFA212401F
LDMOS Transistor
RF–35
0.76 mm [.030"] thick, er = 3.5
1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz
Dimensions: L x W ( mm)
Dimensions: L xW (in.)
l1
0.018 l , 49.9 W
1.55 x 1.70
0.061 x 0.067
l2
0.022 l , 49.9 W
1.91 x 1.70
0.075 x 0.067
l3
0.047 l , 49.9 W
3.99 x 1.70
0.157 x 0.067
l4
0.034 l , 49.9 W
2.90 x 1.70
0.114 x 0.067
l5
0.024 l , 42.8 W
2.01 x 2.16
0.079 x 0.085
l6 (taper)
l7,
l8, l9
l10
l11, l12
l13
l14
l15 (taper)
l16 (taper)
l17 (taper)
l18
0.063 l , 42.8 W / 6.9 W
0.043 l , 6.9 W
5.28 x 2.16 / 20.32
3.33 x 20.32
11.48 x 1.04
2.21 x 20.32
22.10 x 1.65
3.18 x 28.91
2.41 x 28.91
1.04 x 28.91 / 21.89
2.03 x 21.89 / 11.43
2.13 x 11.43 / 2.34
1.40 x 2.34
0.208 x 0.085 / 0.800
0.131 x 0.800
0.134 l , 59.9 W
0.452 x 0.041
0.029 l , 6.9 W
0.087 x 0.800
0.262 l , 51.0 W
0.870 x 0.065
0.042 l , 5.0 W
0.125 x 1.138
0.032 l , 5.0 W
0.095 x 1.138
0.014 l , 5.0 W / 6.65 W
0.026 l , 6.65 W / 11.68 W
0.025 l , 11.68 W / 40.7 W
0.017 l , 40.7 W
0.041 x 1.138 / 0.862
0.080 x 0.862 / 0.450
0.084 x 0.450 / 0.092
0.055 x 0.092
l19
0.123 l , 49.9 W
10.24 x 1.70
0.403 x 0.067
Data Sheet
7 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C14
C2
R1
C1
L1
C13
C19
R3
R8
QQ1
Q1
C15
C16
C3
R2
C27
C29
C6
R6
C18
C5
C4
C9
R5
C17
C31
C7
C33
J1
J2
C8
C10
C24
C32
C23
C11
C30
C12
C28
R7
C25
C22
C21
L2
C26
C20
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer P/N or Comment
C1, C2, C3
C4, C10
Capacitor, 0.001 µF
Capacitor, 4.7 µF, 16 V
Capacitor, 0.1 µF
Digi-Key
Digi-Key
Digi-Key
ATC
PCC1772CT-ND
PCS3475CT-ND
PCC104BCT-ND
100A 8R2
C5, C11, C17, C24
C6, C12
Ceramic capacitor, 8.2 pF
Capacitor, 0.7 pF
C7, C31, C32
C8, C33
AVX
08051J0R7BBTTR
100B 8R2
Ceramic capacitor, 8.2 pF
Capacitor, 1.3 pF
ATC
C9
ATC
600S1R3BT
C13, C20
Capacitor, 8.2 pF
AVX
100A 8R2
C14, C15, C21, C22 Ceramic capacitor, 1 µF
Digi-Key
Digi-Key
Garrett Electronics
445-1411-1-ND
445-1447-2-ND
TPSE106K050R0400
P5571-ND
C16, C23
C18, C25
C19, C26
C27, C28
C29, C30
L1, L2
Q1
Capacitor, 2.2 µF
Tantalum capacitor, 10 µF, 50 V
Electrolytic capacitor, 100 µF, 50 V Digi-Key
Capacitor, 0.3 pF
AVX
08051J0R3BBTTR
08051J0R5BBTTR
BDS 4.6/3/8.9-4S2
BCP56
Capacitor, 0.5 pF
AVX
Ferrite, 8.9 mm
Elna Magnetics
Infineon Technologies
National Semiconductor
Digi-Key
Transistor
QQ1
Voltage regulator
LM7805
R1
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
Chip resistor 10 ohms
Chip resistor 5.1 k-ohms
Variable resistor 2 k-ohms
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
R2
Digi-Key
R3, R5
R4
Digi-Key
Digi-Key
P10ECT-ND
R6, R7
R8
Digi-Key
P5.1KECT-ND
3224W-202ETR-ND
Digi-Key
Data Sheet
8 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
2X 12.70
[.500]
4.83±0.50
[.190±.020]
45° X 2.031
45° X [.080]
C
L
D
4X R1.52
[R.060]
S
23.37±0.51
[.920±.020]
+0.10
LID 13.21
-0.15
+.004
.520
-.006
[
]
C
L
13.72
[.540]
2X R1.63
[R.064]
G
C66065-A2324-C001-01-0027
27.94
[1.100]
LID 22.35±0.23
[.880±.009]
1.02
[.040]
4.11±0.38
[.162±.015]
[.0015]
0.0381
-A-
C
L
34.04
[1.340]
SPH 1.57
[.062]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Primary dimensions are mm. Alternate dimensions are inches.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Data Sheet
9 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
2X 12.70
[.500]
4.83±0.50
[.190±.020]
45° X 2.03
[45° X .080]
D
23.37±0.51
[.920±.020]
+0.10
LID 13.21
-0.15
13.72
[.540]
+.004
C
L
.520
[
-.006
]
+0.381
-0.127
+.015
R0.508
G
R.020
-.005
[
]
C66065-A2325-C001-01-0027
C
L
LID 22.35±0.23
[.880±.009]
1.02
[.040]
4.11±0.38
[.162±.015]
[.0015]
0.0381
-A-
C
L
SPH 1.57
[.062]
S
23.11
[.910]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Primary dimensions are mm. Alternate dimensions are inches.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 04, 2009-10-05
PTFA212401E/F V4
Confidential, Limited Internal Distribution
Revision History:
2009-10-05
Data Sheet
2009-04-01 Data Sheet
PreviousVersion:
Page
Subjects (major changes since last revision)
2
Updated characteristics
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
®
GOLDMOS is a registered trademark of Infineon Technologies AG.
Edition 2009-10-05
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2008 InfineonTechnologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 04, 2009-10-05
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