PXAC201602FCV1R250 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 â 1920 MHz, 2010 â 2025 MHz;型号: | PXAC201602FCV1R250 |
厂家: | Infineon |
描述: | Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 â 1920 MHz, 2010 â 2025 MHz |
文件: | 总9页 (文件大小:402K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PXAC201602FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1880 to 1920
MHz and 2010 to 2025 MHz frequency bands. It features input and
output matching, and a thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PXAC201602FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz
Features
•
Asymmetric Doherty design
3GPP WCDMA signal:
10 dB PAR, 3.84 MHz BW
- Main: 55 W Typ (P
- Peak: 85 W Typ (P
)
)
1dB
24
20
16
12
8
60
40
20
0
1dB
•
•
Broadband internal matching
Efficiency
Pulsed CW performance, 1960 MHz, 28 V
- Output power at P
- Gain = 18 dB
= 100 W
1dB
Gain
- Efficiency = 55%
•
Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
PAR @ 0.01% CCDF
-20
-40
-60
•
•
•
•
•
Integrated ESD protection
4
Human Body Model Class 1C (per JESD22-A114)
Low thermal resistance
c201602fc-gr1a
0
Pb-free and RoHS compliant
25
30
35
40
45
50
Can be operated with I
of up to 700 mA
DQ
Average Output Power (dBm)
(not to exceed maximum ratings limits)
RF Specifications
Single-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)
= 28 V, V = 1.4 V, I = 360 mA, P = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-
V
DD
GS(PEAK)
DQ
OUT
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol
Min
16.5
41
Typ
17.7
44
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
—
%
Adjacent Channel Power Ratio
ACPR
OPAR
OPAR
—
–28
—
–26
—
dBc
dB
Output PAR @ 0.01% CCDF 1880 MHz
Output PAR @ 0.01% CCDF 2025 MHz
7.0
7.8
—
—
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
= 28 V, V = 0 V
I
I
—
1.0
10.0
1.0
—
µA
µA
µA
W
DS
DS
GS
DSS
DSS
GSS
V
= 63 V, V = 0 V
—
—
GS
Gate Leakage Current
V
GS
= 10 V, V = 0 V
DS
I
—
—
On-state Resistance
(main)
(peak)
V
GS
= 10 V, V = 0.1 V
DS
R
—
0.175
0.175
2.71
1.2
DS(on)
DS(on)
V
GS
= 10 V, V = 0.1 V
DS
R
—
—
W
Operating Gate Voltage (main)
(peak)
V
DS
= 28 V, I
= 360 mA
= 0 A
V
GS
2.5
0.9
2.8
1.5
V
DQ
V
= 1.2 V, I
V
GS
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-source Voltage
Gate-source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
°C
J
T
STG
–65 to +150
0.48
°C
Thermal Resistance (Doherty, T
= 70°C, 100 W CW)
R
°C/W
CASE
JC
q
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PXAC201602FC V1 R0
PXAC201602FCV1R0XTMA1
H-37248-4, ceramic open-cavity, earless Tape & Reel, 50 pcs
PXAC201602FC V1 R250 PXAC201602FCV1R250XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Typical Performance (data taken in a reference test fixture)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 2025 MHz
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz and
2025 MHz. 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
3GPP WCDMA signal:
10 dB PAR, 3.84 MHz BW
24
20
16
12
8
60
40
20
0
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
Efficiency
ACP Up
ACP Low
Gain
PAR @ 0.01% CCDF
-20
-40
1880 MHz
2025 MHz
4
Efficiency
35
0
c201602fc-gr1b -60
c201602fc-gr2
25
30
35
40
45
50
25
30
40
45
50
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm,
3GPP WCDMA signal, 10 dB PAR
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm,
3GPP WCDMA signal, 10 dB PAR
20
18
16
14
12
70
60
50
40
30
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
-35
Return Loss
ACP Up
Gain
Efficiency
c201602fc-gr3
c201602fc-gr4
1650
1750
1850
1950
2050
2150
1650
1750
1850
1950
2050
2150
Frequency (MHz)
Frequency (MHz)
Data Sheet
3 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Typical Performance (cont.)
CW Performance
VDD = 28 V, IDQ = 360 mA
CW Performance at selected VDD
IDQ = 360 mA, ƒ = 1880 MHz
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
35
70
60
50
40
30
20
10
0
Efficiency
Efficiency
30
25
20
15
10
5
Gain
Gain
24 V
28 V
32 V
1880 MHz
2025 MHz
c201602fc-gr5
0
0
c201602fc-gr6a
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
CW Performance at selected VDD
Small Signal CW Performance
IDQ = 360 mA, ƒ = 2025 MHz
VDD = 28 V, IDQ = 360 mA
35
70
22
20
18
16
14
12
10
0
30
25
20
15
10
5
60
50
40
30
20
10
0
IRL
Efficiency
-5
-10
-15
-20
-25
-30
Gain
Gain
24 V
28 V
32 V
c201602fc-gr6b
0
c201602fc-gr7
25
30
35
40
45
50
55
1750
1850
1950
2050
2150
Frequency (MHz)
Output Power (dBm)
Data Sheet
4 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Load Pull Performance
Z Source
Z Load
D1
S
G1
G2
D2
Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
P
[W]
PAE
[%]
Zl
[W]
Gain
P
P
OUT
[W]
PAE
[%]
OUT
OUT
OUT
[dBm]
48.39
48.1
[dB]
22.43
22.38
22.6
[dBm]
46.72
46.36
46.41
46.22
46.17
1880
1900
1920
3.88 – j12.84
5.30 – j12.89
5.84 – j14.94
3.96 – j4.18
4.14 – j4.36
4.13 – j4.48
3.84 – j4.53
3.99 – j4.73
20.01
20.21
20.33
20.31
20.4
69.02
64.57
67.92
68.55
65.16
54.18
53.31
55.15
55.74
54.0.3
7.54 – j1.33
7.70 – j1.56
7.03 – j0.76
5.79 – j0.62
5.26 – j0.81
46.99
43.25
43.75
41.88
41.40
65.35
61.53
63.54
64.2
48.32
48.36
48.14
2010
2025
11.80 – j17.15
12.09 – j16.26
22.76
22.7
62.49
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
[dBm]
P
[W]
PAE
[%]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
PAE
[%]
OUT
OUT
OUT
1880
1900
1920
2010
2025
4.62 – j9.02
5.10 – j8.97
6.65 – j8.28
10.61 – j5.85
12.35 – j5.04
2.53 – j4.95
2.65 – j4.91
2.587 – j5.03
2.48 – j5.17
2.48 – j5.64
19.44
19.87
19.82
20.19
20.34
50.31
49.97
50.07
50.19
50.09
107.40
99.31
54.66
53.40
53.76
53.45
52.31
5.39 – j2.83
4.50 – j3.28
4.31 – j3.12
3.80 – j3.47
3.83 – j3.38
22.15
21.90
21.93
22.46
22.70
48.15
48.47
48.54
48.61
48.26
65.31
70.31
71.45
72.61
66.99
64.38
61.18
62.86
63.49
61.23
101.62
104.47
102.09
Reference Circuit, tuned for 1800 – 2200 MHz
DUT
Reference Circuit Part No. LTA/PXAC201602FC V1
PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower)
PXAC201602FC V1
r
Data Sheet
5 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Reference Circuit (cont.)
RO4350, .020 (60)
RO43
(61)
C218
C110
VGG
C104
VDD
C214 C219
C215
C108
C101
C216
C213
R101
C102
C103
C207
C217
C211
C206
C205
C105
RF_IN
RF_OUT
S1
C210
C208
C209
R102
C107
R103
VDD
C106
VGG
C109
C204
C201
C212
C202
C203
PXAC201602FC_OUT_01
PXAC201602FC_IN_01
b
2 0 1 6 0 2 f c _ c d _ 2 0 1 4 - 0 3 - 1 1
Reference circuit assembly diagram (not to scale)
Assembly Information
Component
Description
Suggested Manufacturer
P/N
Input
C101, C104, C106, C107
Chip capacitor, 18 pF
Chip capacitor, 0.4 pF
Chip capacitor, 1.6 pF
Chip capacitor, 2.4 pF
Chip capacitor, 0.3 pF
Capacitor, 10 µF
ATC
ATC800A180JT250T
ATC600F0R4BT
ATC600F1R6BT
ATC800A2R4BT250T
ATC600F0R3BT
UMK325C7106MM-T
ERJ-3GEYJ100V
C16A50Z4
C102
ATC
C103
ATC
C105
ATC
C108
ATC
C109, C110
R101, R102
R103
Taiyo Yuden
Resistor, 10 Ohm
Panasonic Electronic Components
Resistor, 50 Ohm
Anaren
Anaren
S1
Directional coupler
X3C21P1-04S
Data Sheet
6 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Reference Circuit (cont.)
Assembly Information (cont.)
Component
Output
Description
Suggested Manufacturer
P/N
C201, C202, C204, C206,
C208, C214, C216, C219
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C203, C218
Capacitor, 220 µF, 50 V
Chip capacitor, 18 pF
Cornell Dubilier Electronics (CDE)
ATC
SK221M050ST
C205, C210, C211, C212,
C215
ATC800A180JT250T
C207
C209
C213
C217
Chip capacitor, 1.5 pF
Chip capacitor, 2.4 pF
Chip capacitor, 1.2 pF
Chip capacitor, 2.2 pF
ATC
ATC
ATC
ATC
ATC600F1R5BT
ATC800A2R4BT250T
ATC600F1R2BT
ATC800A2R2BT250T
Pinout Diagram (top view)
S
Main
Peak
Pin
D1
D2
G1
G2
S
Description
D1
D2
Drain device 1 (main)
Drain device 2 (peak)
Gate device 1 (main)
Gate device 2 (peak)
Source (flange)
H-37248-4_pd_10-10-2012
G1
G2
Data Sheet
7 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
C
L
+0.13
-0.38
4X R0.76
2X 4.83±0.51
[.190±0.020]
D1
D2
+0.005
-0.015
R.030
[
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
C
L
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
H-37248-4_po_02_01-09-2013
3.76±0.25
[.148±0.010]
C
L
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005].
4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate.
5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
8 of 9
Rev. 04.1, 2016-07-19
PXAC201602FC V1
Revision History
Revision Date
Data Sheet
Page
All
Subjects (major changes since last revision)
New product, proposed only
01
2014-02-21 Advance
2014-02-25 Advance
01.1
2
Added thermal resistance information
Data Sheet now represents production-released product specificaitons,
including reference circuit and performance information
02
2014-03-14 Production
All
03
2015-05-13 Porduction
2015-05-31 Production
2016-07-19 Production
1
Change to RF Test Specfications
04
1, 2
1
Revised condition for RF test specfications, updated ordering code
Added features information
04.1
We Listen toYour Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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To request other information, contact us at:
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or +1 408 776 0600 International
Edition 2016-07-19
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2016 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 04.1, 2016-07-19
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