Q62702-C1586 [INFINEON]
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain); PNP硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益）
| 型号： | Q62702-C1586 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| 文件： | 总9页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BCW 61
BCX 71
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BCW 60, BCX 70 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCW 61 A
BCW 61 B
BCW 61 C
BCW 61 D
BCW 61 FF
BCW 61 FN
BCX 71G
BCX 71H
BAs
BBs
BCs
BDs
BFs
BNs
BGs
BHs
BJs
Q62702-C452
Q62702-C1585
Q62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
Q62702-C1482
Q62702-C1586
Q62702-C1554
Q62702-C1654
B
E
C
SOT-23
BCX 71J
BCX 71 K
BKs
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BCW 61
BCX 71
Maximum Ratings
Parameter
Symbol
Values
Unit
BCW 61 BCW 61 FF BCX 71
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
32
32
32
32
45
45
V
5
I
I
I
C
100
200
200
330
150
mA
Peak collector current
Peak base current
CM
BM
Total power dissipation, T
S
= 71 ˚C Ptot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BCW 61
BCX 71
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 10 mA
BCW 61, BCW 61 FF
BCX 71
32
45
–
–
–
–
Collector-base breakdown voltage
IC
= 10 µA
BCW 61, BCW 61 FF
BCX 71
32
45
–
–
–
–
Emitter-base breakdown voltage
= 1 µA
5
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 32 V
CB = 45 V
CB = 32 V, T
CB = 45 V, T
BCW 61, BCW 61 FF
BCX 71
= 150 ˚C BCW 61, BCW 61 FF
= 150 ˚C BCX 71
–
–
–
–
–
–
–
–
20
20
20
20
nA
nA
µA
µA
A
A
Emitter cutoff current
IEB0
–
–
20
nA
VEB = 4 V
DC current gain 1)
h
FE
–
IC
IC
IC
= 10 µA, VCE = 5 V
20
30
40
100
140
200
300
460
–
–
–
–
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
= 2 mA, VCE = 5 V
120
180
250
380
170
250
350
500
220
310
460
630
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
= 50 mA, VCE = 1 V
60
80
100
110
–
–
–
–
–
–
–
–
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BCW 61
BCX 71
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
V
V
V
CEsat
BEsat
BE (on)
V
–
–
0.12
0.20
0.25
0.55
I
C
= 10 mA, I
B
= 0.25 mA
= 1.25 mA
IC
= 50 mA, I
B
Base-emitter saturation voltage1)
–
–
0.70
0.83
0.85
1.05
I
C
= 10 mA, I
B
= 0.25 mA
= 1.25 mA
IC
= 50 mA, I
B
Base-emitter voltage 1)
–
0.55
–
0.52
0.65
0.78
–
0.75
–
IC
IC
IC
= 10 µA, VCE = 5 V
= 2 mA, VCE = 5 V
= 50 mA, VCE = 1 V
AC characteristics
Transition frequency
f
T
–
–
–
250
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
CB = 0.5 V, f = 1 MHz
Short-circuit input impedance
C
obo
ibo
V
C
8
V
h
h
11e
kΩ
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
10– 4
Open-circuit reverse voltage transfer ratio
12e
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
–
–
–
1.5
2.0
2.0
3.0
–
–
–
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
4
BCW 61
BCX 71
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Short-circuit forward current transfer ratio
h
h
21e
–
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
–
–
–
–
200
260
330
520
–
–
–
–
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
Open-circuit output admittance
22e
µs
IC
= 2 mA, VCE = 5 V, f = 1 kHz
BCW 61 A, BCX 71 G
BCW 61 B, BCX 71 H
–
–
–
–
18
24
30
50
–
–
–
–
BCW 61 FF, BCW 61 C, BCX 71 J
BCW 61 FN, BCW 61 D, BCX 71 K
Noise figure
= 0.2 mA, VCE = 5 V, R
f= 1 kHz, ∆f = 200 Hz
F
V
dB
IC
S
= 2 kΩ
BCW 61 A to BCX 71 K
BCW 61 FF, BCW 61 FN
–
–
2
1
–
2
Equivalent noise voltage
= 0.2 mA, VCE = 5 V, R
f= 10 Hz … 50 Hz
BCW 61 FF, BCW 61 FN
n
–
–
0.11
µV
IC
S
= 2 kΩ
Semiconductor Group
5
BCW 61
BCX 71
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
6
BCW 61
BCX 71
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
h
FE = 40
hFE = 40
Collector current I
C
= f (VBE
)
DC current gain hFE = f (I )
C
V
CE = 5 V
VCE = 5 V
Semiconductor Group
7
BCW 61
BCX 71
Collector cutoff current ICB0 = f (T
A
)
h parameter h
e
= f (I )
C
VCE = 5 V
h parameter h
= 2 mA
e
= f (VCE
)
Noise figure F = f (VCE
)
I
C
IC
= 0.2 mA, R = 2 kΩ, f = 1 kHz
S
Semiconductor Group
8
BCW 61
BCX 71
Noise figure F = f (f)
= 0.2 mA, R = 2 kΩ,VCE = 5 V
Noise figure F = f (I )
C
IC
S
V
CE = 5 V, f = 120 Hz
Noise figure F = f (I
C)
Noise figure F = f (I )
C
V
CE = 5 V, f = 1 kHz
VCE = 5 V, f = 10 kHz
Semiconductor Group
9
相关型号：
Q62702-C1613
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
Q62702-C1614
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
Q62702-C1635
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
Q62702-C1654
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)
INFINEON
Q62702-C1659
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
INFINEON
Q62702-C1687
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
INFINEON
Q62702-C1688
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
INFINEON
©2020 ICPDF网 联系我们和版权申明