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Q62702-C1659 [INFINEON]

NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage); NPN硅AF和开关晶体管（高击穿电压低集电极 - 发射极饱和电压）
Q62702-C1659
型号： Q62702-C1659
厂家： Infineon    Infineon
描述：

NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
NPN硅AF和开关晶体管（高击穿电压低集电极 - 发射极饱和电压）

晶体 开关 晶体管
文件： 总4页 (文件大小：36K)
中文：  中文翻译
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BF 1012  
Silicon N-Channel MOSFET Tetrode  
3
• For low noise, high gain controlled  
input stages up to 1GHz  
4
• Operating voltage 12V  
• Integrated stabilized bias network  
2
VPS05178  
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code Pin Configuration  
Package  
BF 1012  
MYs  
Q62702-F1487 1 = S  
2 = D  
3 = G2 4 = G1 SOT-143  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Drain-source voltage  
Continuos drain current  
16  
V
DS  
25  
mA  
I
D
Gate 1/gate 2 peak source current  
10  
3
±I  
G1/2SM  
Gate 1 (external biasing)  
V
+V  
G1SE  
200  
mW  
°C  
Total power dissipation, T ≤ 76 °C  
P
tot  
S
Storage temperature  
Channel temperature  
-55 ...+150  
150  
T
T
stg  
ch  
Thermal Resistance  
Channel - soldering point  
K/W  
R
≤370  
thchs  
Note:  
It is not recommended to apply external DC-voltage on Gate 1 in active mode.  
Semiconductor Group  
1
Sep-09-1998  
1998-11-01  
Semiconductor Group  
1
BF 1012  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC characteristics  
Drain-source breakdown voltage  
16  
8
10  
-
-
-
-
V
V
(BR)DS  
I = 300 µA, -V  
= 4 V, - V  
= 4 V  
G2S  
D
G1S  
Gate 1 source breakdown voltage  
±I = 10 mA, V = V = 0  
12  
16  
60  
50  
±V  
±V  
(BR)G1SS  
(BR)G2SS  
G1SS  
G1S  
G2S  
DS  
Gate 2 source breakdown voltage  
±I = 10 mA, V = 0 V, V = 0 V  
-
G2S  
G1S  
DS  
Gate 1 source current  
= 6 V, V = 0 V  
-
µA  
+I  
V
G1S  
G2S  
Gate 2 source leakage current  
±V = 8 V, V = 0 V, V = 0 V  
-
-
nA  
±I  
G2SS  
G2S  
G1S  
DS  
Drain current  
= 12 V, V  
-
-
500 µA  
I
I
DSS  
V
= 0 , V  
= 6 V  
G2S  
DS  
G1S  
Operating current (selfbiased)  
= 12 V, V = 6 V  
8
-
10  
0.9  
-
-
mA  
V
DSO  
V
DS  
G2S  
Gate 2-source pinch-off voltage  
= 12 V, I = 100 µA  
V
G2S(p)  
V
DS  
D
AC characteristics  
Forward transconductance (self biased)  
-
-
24  
2.1  
0.9  
22  
-
mS  
g
fs  
V
= 12 V, V  
= 6 V, f = 1 kHz  
G2S  
DS  
Gate 1-input capacitance (self biased)  
= 12 V, V = 6 V, f = 1 MHz  
2.5 pF  
C
C
G
g1ss  
dss  
ps  
V
DS  
G2S  
Output capacitance (self biased)  
= 12 V, V = 6 , f = 1 MHz  
-
-
V
DS  
G2S  
Power gain (self biased)  
= 12 V, V = 6 , f = 800 MHz  
-
-
-
-
dB  
V
DS  
G2S  
Noise figure (self biased)  
= 12 V, V = 6 V, f = 800 MHz  
-
1.4  
50  
F
800  
V
DS  
G2S  
Gain control range (self biased)  
= 12 V, V = 6 V, f = 800 MHz  
40  
∆G  
ps  
V
DS  
G2S  
Semiconductor Group  
Semiconductor Group  
2
Sep-09-1998  
1998-11-01  
2
BF 1012  
Total power dissipation P = f (T )  
Drain current I = f (V  
)
G2S  
tot  
S
D
300  
11  
mA  
mW  
9
8
200  
150  
100  
50  
7
P
I
6
5
4
3
2
1
0
0
°C  
V
0
20  
40  
60  
80  
100 120  
150  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
G2S  
T
V
S
Insertion power gain  
Forward transfer admittance  
2
| S | = f (V  
)
| Y | = f (V  
)
G2S  
21  
G2S  
21  
24  
10  
dB  
mS  
0
-5  
20  
18  
16  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
Y
14  
12  
10  
8
6
4
2
0
V
V
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
G2S  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
G2S  
V
V
Semiconductor Group  
Semiconductor Group  
3
Sep-09-1998  
1998-11-01  
3
BF 1012  
Gate 1 input capacitance C  
= f (V  
)
Output capacitance C  
= f (V )  
dss G2  
g1ss  
g2s  
f = 200MHz  
f = 200MHz  
3.2  
pF  
3.2  
pF  
2.4  
2.4  
2.0  
2.0  
C
C
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
V
V
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
G2S  
0.0  
1.0  
2.0  
3.0  
4.0  
6.0  
G2S  
V
V
Semiconductor Group  
Semiconductor Group  
4
Sep-09-1998  
1998-11-01  
4

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