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Q62702-F1066 [INFINEON]

PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage); PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的
Q62702-F1066
型号： Q62702-F1066
厂家： Infineon    Infineon
描述：

PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的

晶体 开关 晶体管 电视 高压
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PNP Silicon High-Voltage Transistors  
BFN 25  
BFN 27  
● Suitable for video output stages in TV sets  
and switching power supplies  
● High breakdown voltage  
● Low collector-emitter saturation voltage  
● Complementary types: BFN 24, BFN 26 (NPN)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BFN 25  
BFN 27  
FKs  
FLs  
Q62702-F1066  
Q62702-F977  
B
E
C
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BFN 25  
250  
BFN 27  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
300  
V
V
250  
300  
V
5
I
I
I
I
C
200  
500  
mA  
Peak collector current  
Base current  
CM  
B
100  
Peak base current  
BM  
200  
Total power dissipation, T  
S
= 74 ˚C  
P
tot  
360  
mW  
˚C  
Junction temperature  
Tj  
150  
Storage temperature range  
T
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 280  
≤ 210  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
BFN 25  
BFN 27  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CB0  
V(BR)EB0  
V
IC  
= 1 mA  
BFN 25  
BFN 27  
250  
300  
–
–
–
–
Collector-base breakdown voltage  
IC  
= 100 µA  
BFN 25  
BFN 27  
250  
300  
–
–
–
–
Emitter-base breakdown voltage  
= 100 µA  
5
–
–
IE  
Collector-base cutoff current  
ICB0  
V
V
V
V
CB = 200 V  
CB = 250 V  
CB = 200 V, T  
CB = 250 V, T  
BFN 25  
BFN 27  
BFN 25  
BFN 27  
–
–
–
–
–
–
–
–
100  
100  
20  
nA  
nA  
µA  
µA  
A
A
= 150 ˚C  
= 150 ˚C  
20  
Emitter-base cutoff current  
IEB0  
–
–
100  
nA  
VEB = 3 V  
DC current gain  
h
FE  
–
IC  
IC  
IC  
= 1 mA, VCE = 10 V  
= 10 mA, VCE = 10 V1)  
= 30 mA, VCE = 10 V1)  
25  
40  
40  
30  
–
–
–
–
–
–
–
–
BFN 25  
BFN 27  
Collector-emitter saturation voltage1)  
V
V
CEsat  
BEsat  
V
–
–
–
–
0.4  
0.5  
IC  
= 20 mA, I  
B
= 2 mA  
BFN 25  
BFN 27  
Base-emitter saturation voltage1)  
= 20 mA, I = 2 mA  
–
–
0.9  
IC  
B
AC characteristics  
Transition frequency  
f
T
–
–
100  
2.5  
–
–
MHz  
pF  
IC  
= 20 mA, VCE = 10 V, f = 20 MHz  
Output capacitance  
C
obo  
VCB = 30 V, f = 1 MHz  
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
2
BFN 25  
BFN 27  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Transition frequency f  
T
= f (I )  
C
* Package mounted on epoxy  
VCE = 10 V  
Permissible pulse load Ptot max / Ptot DC = f (t  
p)  
Operating range I  
= 25 ˚C, D = 0  
C
= f (VCE0)  
T
A
Semiconductor Group  
3
BFN 25  
BFN 27  
Collector current I  
C
= f (VBE  
)
Collector cutoff current ICB0 = f (T  
VCB = 200 V  
A
)
V
CE = 10 V  
DC current gain hFE = f (I )  
C
V
CE = 10 V  
Semiconductor Group  
4

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