Q67040S4714 [INFINEON]
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode; 低损耗DUOPACK : IGBT的沟槽场终止和技术,软,恢复快反平行EMCON何二极管型号: | Q67040S4714 |
厂家: | Infineon |
描述: | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
文件: | 总13页 (文件大小:364K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IKP04N60T
q
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
E
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
- Frequency Converters
- Drives
•
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
P-TO-220-3-1
(TO-220AB)
- low VCE(sat)
•
•
•
•
•
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
K04T60
Package Ordering Code
TO-220 Q67040S4714
IKP04N60T
600 V
4 A
1.5 V
175 °C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
8
4
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
-
IF
12
12
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
4
8
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpuls
VGE
tSC
12
±20
5
V
Short circuit withstand time1)
µs
V
GE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Ptot
Tj
Tstg
-
42
W
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-40...+175
-55...+175
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
Thermal Resistance
Parameter
Symbol
Conditions
TO-220-3-1
TO-220-3-1
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
RthJCD
RthJA
3.5
5
K/W
TO-220-3-1
62
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=4A
Tj=25°C
-
-
1.5
1.9
2.05
-
Tj=175°C
Diode forward voltage
VF
VGE=0V, IF=4A
-
-
1.65
1.6
2.05
-
Tj=25°C
Tj=175°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
IC= 60µA,VCE=VGE
4.1
4.9
5.7
V
C E=600V,
µA
V
GE=0V
Tj=25°C
Tj=175°C
-
-
-
-
-
-
-
40
1000
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=4A
nA
S
2.2
-
Integrated gate resistor
RGint
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
252
20
7.5
27
-
-
-
-
pF
f=1MHz
V
V
QGa te
CC=480V, IC=4A
GE=15V
nC
nH
A
Internal emitter inductance
LE
TO-220-3-1
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
36
V
GE=15V,tSC ≤5µs
VCC = 400V,
Tj ≤ 150°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
14
7
164
43
61
84
-
-
-
-
-
-
-
ns
µJ
Tj=25°C,
V
V
CC=400V,IC=4A,
GE=0/15V,
RG= 47 Ω,
Lσ 1)=150nH,
Cσ 1)=47pF
Energy losses include
“tail” and diode
reverse recovery.
145
trr
Qrr
-
-
-
-
28
79
5.3
346
-
-
-
-
ns
nC
A
Tj=25°C,
VR=400V, IF=4A,
diF/dt=610A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
A/µs
recovery current during tb
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
14
10
185
83
99
97
-
-
-
-
-
-
-
ns
Tj=175°C,
V
V
CC=400V,IC=4A,
GE=0/15V,
RG= 47 Ω
Lσ 1)=150nH,
Cσ 1)=47pF
µJ
Energy losses include
“tail” and diode
reverse recovery.
196
trr
Qrr
-
-
-
-
95
291
6.6
-
-
-
-
ns
nC
A
Tj=175°C
VR=400V, IF=4A,
diF/dt=610A/µs
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
dirr/dt
253
A/µs
recovery current during tb
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
tp=2µs
10A
12A
10A
8A
10µs
TC=80°C
TC=110°C
1A
6A
50µs
4A
Ic
Ic
1ms
DC
2A
0.1A
1V
10ms
0A
10Hz
10V
100V
1000V
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE=15V)
V
GE = 0/+15V, RG = 47Ω)
8A
6A
4A
2A
0A
40W
30W
20W
10W
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
10A
8A
6A
4A
2A
0A
10A
V
GE=20V
15V
V
GE=20V
15V
8A
6A
4A
2A
0A
13V
11V
9V
13V
11V
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
2.5V
IC=8A
8A
6A
4A
2.0V
1.5V
1.0V
0.5V
0.0V
IC=4A
IC=2A
2A
0A
TJ=175°C
25°C
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
td(off)
td(off)
100ns
10ns
1ns
100ns
tf
td(on)
tf
td(on)
tr
10ns
tr
50Ω
0A
2A
4A
6A
100Ω
150Ω
200Ω
250Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 47ꢀ,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
td(off)
6V
max.
100ns
typ.
5V
tf
4V
3V
2V
1V
0V
min.
td(on)
10ns
tr
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
function of junction temperature
(inductive load, VCE = 400V,
V
GE = 0/15V, IC = 4A, RG=47ꢀ,
Dynamic test circuit in Figure E)
6
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
*) Eon and Ets include losses
*) Eon and Etsinclude losses
due to diode recovery
due to diode recovery
Ets*
0.4 mJ
0.3 mJ
0.2 mJ
0.1 mJ
0.0 mJ
Ets*
0.3mJ
0.2mJ
0.1mJ
0.0mJ
Eoff
Eoff
Eon
*
Eon*
25Ω 50Ω
100Ω
150Ω
200Ω
250Ω
0A
2A
4A
6A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 47ꢀ,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
175µJ
150µJ
125µJ
100µJ
75µJ
50µJ
25µJ
0µJ
due to diode recovery
due to diode recovery
0.25mJ
0.20mJ
0.15mJ
0.10mJ
0.05mJ
0.00mJ
Ets*
Ets*
Eoff
Eoff
Eon
*
Eon
*
25°C 50°C 75°C 100°C 125°C 150°C
300V
350V
400V
450V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE = 400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 4A, RG = 47ꢀ,
VGE = 0/15V, IC = 4A, RG = 47ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
Ciss
15V
10V
5V
120V
100pF
480V
Coss
10pF
Crss
0V
0V 10V 20V 30V 40V 50V 60V 70V
0nC 5nC 10nC 15nC 20nC 25nC 30nC
Q
GE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=4 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
60A
50A
40A
30A
20A
10A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
T
Jmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
8
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
D=0.5
D=0.5
100K/W
0.2
0.1
0.2
R , ( K / W )
0.38216
0.68326
1.49884
0.93550
τ , ( s )
5.16*10-2
7.818*10-3
9*10-4
100K/W
R , ( K / W )
0.29183
0.79081
1.86970
2.04756
τ , ( s )
7.018*10-2
1.114*10-2
1.236*10-3
2.101*10-4
R2
6
0.1
1.134*10-4
R2
0.05
R1
R1
0.05
0.02
0.01
10-1K/W
C1=τ1/R1 C2=τ2/R2
C1=τ1/R1 C2=τ2/R2
0.02
0.01
10-1K/W
single pulse
single pulse
1µs
10µs 100µs 1ms 10ms 100ms
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
Figure 22. Diode transient thermal
(D = tp / T)
impedance as a function of pulse
width
(D=tP/T)
280ns
240ns
0.35µC
TJ=175°C
0.30µC
0.25µC
0.20µC
TJ=175°C
200ns
160ns
120ns
TJ=25°C
0.15µC
0.10µC
0.05µC
0.00µC
80ns
TJ=25°C
40ns
0ns
400A/µs
600A/µs
400A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=4A,
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
Dynamic test circuit in Figure E)
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
9
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
TJ=175°C
TJ=175°C
10A
8A
6A
4A
2A
0A
-300A/µs
-200A/µs
-100A/µs
0A/µs
TJ=25°C
TJ=25°C
400A/µs
600A/µs
400A/µs
600A/µs
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=4A,
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
IF=8A
10A
8A
2.0V
4A
2A
1.5V
1.0V
0.5V
0.0V
6A
TJ=25°C
4A
175°C
2A
0A
0°C
50°C
100°C
150°C
0V
1V
2V
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Figure 27. Typical diode forward current as
a function of forward voltage
10
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
Dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.7
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1457
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
3.00
6.80
14.00
4.75
0.65
1.32
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
11
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
Figure B. Definition of switching losses
12
Rev. 2.2 Dec-04
Power Semiconductors
IKP04N60T
q
TrenchStop Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Rev. 2.2 Dec-04
Power Semiconductors
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