Q67040S4723 [INFINEON]
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY; 低损耗IGBT的沟槽场终止和技术
| 型号： | Q67040S4723 |
| 厂家： | 
Infineon |
| 描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 文件： | 总13页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Low Loss IGBT in Trench and Fieldstop technology
C
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
•
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
P-TO-247-3-1
(TO-220AC)
- low VCE(sat)
•
•
•
•
Positive temperature coefficient in VCE(sat)
Low EMI
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Low Gate Charge
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
1.5 V
Tj,max
Marking Code
G50T60
Package Ordering Code
TO-220 Q67040S4723
TO-263 Q67040S4721
TO-247 Q67040S4725
IGP50N60T
IGB50N60T
IGW50N60T
600 V
600 V
600 V
50 A
50 A
50 A
175 °C
175 °C
175 °C
1.5 V
G50T60
1.5 V
G50T60
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
VCE
IC
600
V
A
100
50
TC = 100°C
Pulsed collector current, tp limited by Tjmax
ICpuls
-
VGE
tSC
150
150
±20
5
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Gate-emitter voltage
V
Short circuit withstand time1)
µs
V
GE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Ptot
Tj
Tstg
-
333
W
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-40...+175
-55...+175
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
RthJC
RthJA
0.45
K/W
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm² Cu)
62
40
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VC E(sa t) VGE = 15V, IC=50A
Tj=25°C
-
-
1.5
1.9
2.0
-
Tj=175°C
Gate-emitter threshold voltage
Zero gate voltage collector current
VGE(th )
IC ES
IC=0.8mA,VCE=VGE
4.1
4.9
5.7
V
C E=600V,
µA
V
GE=0V
Tj=25°C
Tj=175°C
-
-
-
-
-
-
-
31
-
40
1000
100
-
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=50A
nA
S
Integrated gate resistor
RGint
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
-
-
-
-
3140
200
93
-
-
-
-
pF
f=1MHz
V
V
QGa te
CC=480V, IC=50A
GE=15V
310
nC
nH
A
Internal emitter inductance
LE
TO-247-3-1
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC (SC)
458.3
V
GE=15V,tSC ≤5µs
VCC = 400V,
Tj ≤ 150°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
26
29
299
29
1.2
1.4
2.6
-
-
-
-
-
-
-
ns
Tj=25°C,
V
V
CC=400V,IC=50A,
GE=0/15V,
RG= 7 Ω,
Lσ 1)=103nH,
Cσ 1)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery.2)
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td (on)
tr
td (off)
tf
Eon
Eo ff
Ets
-
-
-
-
-
-
-
27
33
341
55
1.8
1.8
3.6
-
-
-
-
-
-
-
ns
Tj=175°C,
V
V
CC=400V,IC=50A,
GE=0/15V,
RG= 7 Ω
Lσ 1)=103nH,
Cσ 1)=39pF
mJ
Energy losses include
“tail” and diode
reverse recovery. 2)
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
2) Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E.
3
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
tp=2µs
10µs
140A
120A
100A
80A
60A
40A
20A
0A
100A
TC=80°C
TC=110°C
10A
50µs
Ic
1ms
Ic
DC
1A
1V
10ms
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(D = 0, TC = 25°C, Tj ≤175°C;
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE=15V)
V
GE = 0/+15V, RG = 7Ω)
300W
250W
200W
150W
100W
50W
80A
60A
40A
20A
0A
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
120A
100A
80A
60A
40A
20A
0A
120A
V
GE=20V
15V
V
GE=20V
100A
80A
60A
40A
20A
0A
15V
13V
13V
11V
9V
11V
9V
7V
7V
0V
1V
2V
3V
0V
1V
2V
3V
4V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
2.5V
IC=100A
80A
60A
40A
2.0V
1.5V
1.0V
0.5V
0.0V
IC=50A
IC=25A
TJ=175°C
20A
25°C
0A
0°C
50°C
100°C
150°C
0V
2V
4V
6V
8V
V
GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
IGW50N60T
TrenchStop Series
td(off)
td(off)
100ns
tr
tf
100ns
tf
tr
td(on)
td(on)
10ns
10ns
0Ω
0A
20A
40A
60A
80A
5Ω
10Ω
15Ω
20Ω
25Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 7ꢀ,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
td(off)
max.
typ.
5V
100ns
4V
3V
2V
1V
0V
min.
tf
tr
td(on)
10ns
25°C
50°C
75°C 100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)
function of junction temperature
(inductive load, VCE = 400V,
V
GE = 0/15V, IC = 50A, RG=7ꢀ,
Dynamic test circuit in Figure E)
6
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
IGW50N60T
TrenchStop Series
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
Ets*
due to diode recovery
6.0mJ
5.0mJ
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
8.0mJ
6.0mJ
4.0mJ
2.0mJ
0.0mJ
Ets*
Eon*
Eoff
Eoff
Eon
*
0A
20A
40A
60A
80A
0Ω
10Ω
20Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
Figure 14. Typical switching energy losses
as a function of gate resistor
as a function of collector current
(inductive load, TJ = 175°C,
(inductive load, TJ = 175°C,
V
CE = 400V, VGE = 0/15V, RG = 7ꢀ,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
Ets*
4mJ
3mJ
2mJ
1mJ
0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
Eon
*
Ets*
Eoff
Eoff
Eon*
25°C 50°C
75°C 100°C 125°C 150°C
300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, VCE = 400V,
(inductive load, TJ = 175°C,
V
GE = 0/15V, IC = 50A, RG = 7ꢀ,
VGE = 0/15V, IC = 50A, RG = 7ꢀ,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Ciss
15V
10V
5V
1nF
120V
480V
Coss
100pF
Crss
0V
0V
10V
20V
30V
40V
0nC
100nC
200nC
300nC
Q
GE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
(IC=50 A)
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
10µs
8µs
800A
700A
600A
500A
400A
300A
200A
100A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
T
Jmax<150°C)
(VCE ≤ 400V, Tj ≤ 150°C)
8
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
D=0.5
0.2
0.1
10-1K/W
R , ( K / W )
0.18355
0.12996
0.09205
0.03736
0.00703
τ , ( s )
7.425*10-2
8.34*10-3
7.235*10-4
1.035*10-4
4.45*10-5
R2
0.05
R1
10-2K/W
0.02
0.01
single pulse
C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
9
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
10.30
15.95
0.86
3.7
min
max
A
B
C
D
E
F
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1457
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
3.00
6.80
14.00
4.75
0.65
1.32
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
10
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
dimensions
TO-247AC
symbol
[mm]
[inch]
min
4.78
2.29
1.78
1.09
1.73
2.67
max
5.28
2.51
2.29
1.32
2.06
3.18
min
max
A
B
C
D
E
F
0.1882 0.2079
0.0902 0.0988
0.0701 0.0902
0.0429 0.0520
0.0681 0.0811
0.1051 0.1252
0.0299 max
G
H
K
L
0.76 max
20.80
21.16
16.15
5.72
0.8189 0.8331
0.6161 0.6358
0.2051 0.2252
0.7799 0.8142
0.1402 0.1941
0.1421
15.65
5.21
M
N
19.81
3.560
20.68
4.930
3.61
P
Q
6.12
6.22
0.2409 0.2449
11
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
tF
t
QS
10% Ir r m
QF
Ir r m
dir r /dt
VR
90% Ir r m
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r 2
τn
r1
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
12
Rev. 2.2 Dec-04
Power Semiconductors
IGP50N60T, IGB50N60T
IGW50N60T
TrenchStop Series
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Rev. 2.2 Dec-04
Power Semiconductors
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